Titanium-based silicide quantum dot superlattices for thermoelectrics applications

Savelli, G.; Stein, Sergio Silveira; Bernard‐Granger, Guillaume; Faucherand, Pascal; Montès, L.; Dilhaire, S.; Pernot, Gilles

doi:10.1088/0957-4484/26/27/275605

Cited by 13 publications

(12 citation statements)

References 15 publications

(26 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…( d ) Seebeck coefficients of P-doped typical stacked structure (8-nm NDs/376-ML Si sample and 12-nm NDs/303-ML Si sample). Open square, circle, triangle and diamond marks indicate the reported values of bulk Si 9 45 , Si 0.7 Ge 0.3 45 and Si 0.87 Ge 0.13 thin film 46 for reference. The inset shows the thermal conductivities of non-doped (solid bar) and doped (open bar) nanoarchitectures.…”

Section: Figurementioning

confidence: 99%

Independent control of electrical and heat conduction by nanostructure designing for Si-based thermoelectric materials

Yamasaka

Watanabe

Sakane

et al. 2016

Sci Rep

View full text Add to dashboard Cite

The high electrical and drastically-low thermal conductivities, a vital goal for high performance thermoelectric (TE) materials, are achieved in Si-based nanoarchitecture composed of Si channel layers and epitaxial Ge nanodots (NDs) with ultrahigh areal density (~1012 cm−2). In this nanoarchitecture, the ultrasmall NDs and Si channel layers play roles of phonon scattering sources and electrical conduction channels, respectively. Electron conductivity in n-type nanoacrhitecture shows high values comparable to those of epitaxial Si films despite the existence of epitaxial NDs. This is because Ge NDs mainly scattered not electrons but phonons selectively, which could be attributed to the small conduction band offset at the epitaxially-grown Si/Ge interface and high transmission probability through stacking faults. These results demonstrate an independent control of thermal and electrical conduction for phonon-glass electron-crystal TE materials by nanostructure designing and the energetic and structural interface control.

show abstract

Section: Figurementioning

confidence: 99%

Independent control of electrical and heat conduction by nanostructure designing for Si-based thermoelectric materials

Yamasaka

Watanabe

Sakane

et al. 2016

Sci Rep

View full text Add to dashboard Cite

show abstract

“…Moreover, another way to improve µTEGs performances would consist in using thermoelectric nanostructured materials instead of bulk SiGe layers. For example, our previous studies have already shown that the use of quantum dot superlattice (QDSL) based on TiSi2 nanoparticles inside a SiGe matrix improved the performances of micro-thermoelectric sensors (µTES) compared to the same µTES integrating bulk SiGe layers [16][17]. Combination of improved contact resistances with such high-performance nanostructured materials will enable these µTEGs to increase still more their performances.…”

Section: Discussionmentioning

confidence: 99%

High power 2.5D integrated thermoelectric generators combined with microchannels technology

Savelli

Colonna

Coudrain

et al. 2022

Energy

Self Cite

View full text Add to dashboard Cite

“…Besides the apophysis heterostructure, Savelli et al 73) prepared an N-type Si/Ge SL within regular sphere Ti silicide QDs embedding, as shown in Fig. 7(b).…”

Section: Nsmentioning

confidence: 99%

Silicon-based low-dimensional materials for thermal conductivity suppression: recent advances and new strategies to high thermoelectric efficiency

Lai

Peng

Gao

et al. 2020

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

Thermoelectric (TE) materials can convert any kind of heat into electricity through the Seebeck effect. Harvesting body heat and generating electricity by TE wearable devices can provide a convenient charge service for electrical equipment, even in the case of emergency or disaster. As a high-temperature excellent TE material, silicon also exhibits promising room temperature (RT) potential for wearable TE devices due to its safe and mature production line for the semiconductor industry. Aiming to search for solutions for reducing thermal conductivity (k), this review summarizes the low-dimensional strategies for reducing k based on nanostructural classification, thus enhancing zT at RT, and it also looks into the prospect of wearable application. Following in the footsteps of nanostack (NS), nanowire (NW), nanoporous (NP) and nanocomposite (NC) Sibased TE materials research, we found that the thermal conductivity has been well controlled and that harmonious regulation of the power factor (PF) with k will be the future direction. © 2020 The Japan Society of Applied Physics 14) and Mg 0.97 Zn 0.03 Ag 0.9 Sb 0.95 . 15) Nevertheless, two critical shortcomings limit their application on wearability. On the one hand, most of them are rare in lithosphere and toxic to the human body, which is not desirable in terms of their mass application on skin. On the other hand, the volume of convectional bulk materials cannot satisfy the demand of the increasing miniaturization of wearable terminals.

show abstract

Titanium-based silicide quantum dot superlattices for thermoelectrics applications

Cited by 13 publications

References 15 publications

Independent control of electrical and heat conduction by nanostructure designing for Si-based thermoelectric materials

Independent control of electrical and heat conduction by nanostructure designing for Si-based thermoelectric materials

High power 2.5D integrated thermoelectric generators combined with microchannels technology

Silicon-based low-dimensional materials for thermal conductivity suppression: recent advances and new strategies to high thermoelectric efficiency

Contact Info

Product

Resources

About