Titanium-Based Getter Solution for Wafer-Level MEMS Vacuum Packaging

Chidambaram, Vivek; Xie, Ling; Chen, Bangtao

doi:10.1007/s11664-012-2350-9

Cited by 35 publications

(20 citation statements)

References 9 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Compared to oxides samples without any getter, carbon dioxide has totally disappeared and the partial pressure of hydrogen has been drastically reduced due to the presence of the getter. This result is in agreement with the studies of Giorgi [14] and Chidambaram [15] where the reactivity between some gaseous species such as hydrogen or carbon dioxide and the getter material is demonstrated while hydrocarbons are inactive.…”

Section: Figure 6 Outgassing Capacity Of the Getter Materialssupporting

confidence: 93%

Outgassing characterization of MEMS thin film packaging materials

Savornin

Baillin

Blanquet

et al. 2013

2013 IEEE 63rd Electronic Components and Technology Conference

View full text Add to dashboard Cite

In the field of MEMS packaging technology the pressure limit inside the cavity is a crucial parameter. As the cavity size becomes smaller and smaller the vacuum is mainly affected by the outgassing of the materials used in the fabrication process. A full characterization of this phenomenon for oxides that can be integrated as encapsulation layer is presented in this study. A combination of dynamic outgassing, Residual Gas Analysis (RGA) and thermodynamic simulations is involved to fully investigate the material outgassing behavior. The temperature and the nature of released gases are evaluated indicating the optimal annealing or other cleaning process before the sealing of cavities. Moreover the combination of these oxides with a getter material is analyzed. The affinity between carbon dioxide, nitrogen, hydrogen and the getter material is demonstrated as well as its non-reactivity with hydrocarbons. The pressure inside the cavity can be efficiently decreased by integrating this pumping material. Therefore a selection of materials and new fabrication processes can be considered using those results.

show abstract

Section: Figure 6 Outgassing Capacity Of the Getter Materialssupporting

confidence: 93%

Outgassing characterization of MEMS thin film packaging materials

Savornin

Baillin

Blanquet

et al. 2013

2013 IEEE 63rd Electronic Components and Technology Conference

View full text Add to dashboard Cite

show abstract

“…Several authors reported the residual gas analysis (RGA) of the internal atmosphere inside micropackages with or/and without a getter film. (12,22,31,49,(58)(59)(60)(61) Such an analysis can be performed by punching the cap and measuring the released gas with a high-performance mass spectrometer. (12,58) The main residual gases are most often H 2 , N 2 , CH 4 and other hydrocarbons, CO and CO 2 , and noble gases.…”

Section: Gas Loading In a Wafer-level Packagementioning

confidence: 99%

“…Argon is also observed when the getter film or other films are deposited by Ar sputtering. (31) It was observed that the annealing of a sputtered getter film prior to bonding only partially minimizes argon release. (31) Another solution is to use krypton (53) or xenon instead of argon as the sputtering gas for the getter film (and other films).…”

Section: Gas Loading In a Wafer-level Packagementioning

confidence: 99%

“…To lower the packaging cost that represents a large part of the final cost for MEMS devices, vacuum packaging at the wafer level (WLP) is increasingly used. A getter-less vacuum packaging of MEMS devices can be realized, (13,14,22,24,(26)(27)(28)(29)(30)(31)(32)(33)(34)(35)(36) but it typically requires high-temperature (400-1100 °C) baking and sealing steps, and/or a long outgassing step; otherwise, it leads to a relatively high internal pressure (Table 1). For example, an internal pressure down to 10 −3 mbar can be achieved by the epi-seal fabrication process (24) but the process involves annealing at 1100 °C for 8 h after bonding, high-temperature baking, at 1150 °C for cavity sealing by hydrogen annealing and silicon migration, or cavity sealing by depositing epitaxial silicon at 1080 °C.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Effect of Environment on Activation and Sorption of Getter Alloys and Multilayers for Hybrid Wafer-level Vacuum Packaging

Bosseboeuf¹,

Lemettre²,

Wu³

et al. 2019

Sensors and Materials

View full text Add to dashboard Cite

A large set of micro-and nanodevices requires hybrid vacuum packaging at the wafer level to optimize their performance and lifetime. When the temperature of the packaging fabrication process is limited, getter films must be integrated into the packaging cavity to obtain a low and sustainable pressure. In this paper, gas generation and residual gases inside a wafer-level package, as well as the main getter alloy films and multilayers investigated previously, are reviewed. An emphasis is put on the effect of a gaseous environment on the physicochemical mechanisms involved in getter film activation and gas sorption. A large outgassing occurs during the packaging fabrication process. It produces a gas load larger than or similar to that generated during the entire lifetime of the device at room temperature. The resulting partial pressures of gases in a micropackage are quite different from those found in ultrahigh vacuum during characterization by surface analysis techniques and when getter films are used in accelerators. Consequently, in micropackages, activation and sorption steps can no longer be analyzed separately and surface oxidation and/or oxygen bulk diffusion during activation should be taken into account. It is thus recommended to use and develop complementary characterization techniques that enable the investigation of surface and bulk phenomena at various temperatures, pressures, and gas mixtures for the assessment of getter films for vacuum packaging.

show abstract

“…Conventional sealing of MEMS devices is placing bulk getters in cavity which occupy valuable space and may cause tiny particles contamination. However, NEG films deposited in the cavity can be heat activated while the device bonding process at high temperature and maintain the vacuum environment [8,9].…”

Section: Introductionmentioning

confidence: 99%

Influence of the sputtering glancing angle on the microstructure and adsorption characteristics of Zr-Co-RE getter films

Zhou¹,

Zhou²,

Liu³

et al. 2020

Mater. Res. Express

View full text Add to dashboard Cite

Zr-Co-RE non-evaporable getter films have excellent gas adsorption performance therefore can be used in vacuum sealed electronic devices. The microstructure of getter films has vital effect on adsorption performance. In this paper, Zr-Co-RE films deposited by DC magnetron sputtering at different glancing angles are investigated including microstructures and adsorption characteristics. The surface and cross-sectional morphologies demonstrate loose, porous and columnar-like structure which forms because of low lateral mobility of Zr and Co atoms and shadowing effect of nonperpendicular sputtering. Zr-Co-RE films are amorphous or nanocrystalline structure. The films deposited at 90°glancing angle show large grain size. After Zr-Co-RE films are heated at 350°C for 15 min, the H 2 adsorption capacity and pumping speed at ambient temperature are tested. The films grown at 90°glancing angle have highest initial pumping speed (103.9 ml s −1 cm −2 ), which owe to its more gas diffusion path and active surface, meanwhile, the adsorption capacity is lower than 60°b ecause of difficult and limited diffusion process into getter matrix. The films grown at 60°glancing angle have best adsorption capacity (71.5 Pa.ml cm −2 ) and pumping speed stability. ORCID iDsDetian Li https:/ /orcid.org/0000-0001-6842-6217

show abstract

Titanium-Based Getter Solution for Wafer-Level MEMS Vacuum Packaging

Cited by 35 publications

References 9 publications

Outgassing characterization of MEMS thin film packaging materials

Outgassing characterization of MEMS thin film packaging materials

Effect of Environment on Activation and Sorption of Getter Alloys and Multilayers for Hybrid Wafer-level Vacuum Packaging

Influence of the sputtering glancing angle on the microstructure and adsorption characteristics of Zr-Co-RE getter films

Contact Info

Product

Resources

About