2006
DOI: 10.1016/j.cplett.2005.11.102
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TiO2 nanotube layers: Dose effects during nitrogen doping by ion implantation

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Cited by 115 publications
(77 citation statements)
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“…In contrast to these surfaceconfined sensitization protocols, bulk-doping of TiO 2 has also attracted significant interest. In the latter approach, 2 Advances in Physical Chemistry transition metals [86][87][88] or main-group elements like carbon [35,89], nitrogen [31,[90][91][92][93][94][95][96][97], and sulfur [98,99] are introduced into the lattice of titania resulting in formation of intrabandgap donor and acceptor levels, allowing thus for visible light (λ > 400 nm) excitation. Apart from the fields of solar cells and photocatalysis, the visible light-responsive TiO 2 materials opened up a route for further developments including photoelectrochemistry-based sensors [100,101] and light-addressable photoelectrochemical optoelectronic devices [102][103][104][105][106].…”
Section: Introductionmentioning
confidence: 99%
“…In contrast to these surfaceconfined sensitization protocols, bulk-doping of TiO 2 has also attracted significant interest. In the latter approach, 2 Advances in Physical Chemistry transition metals [86][87][88] or main-group elements like carbon [35,89], nitrogen [31,[90][91][92][93][94][95][96][97], and sulfur [98,99] are introduced into the lattice of titania resulting in formation of intrabandgap donor and acceptor levels, allowing thus for visible light (λ > 400 nm) excitation. Apart from the fields of solar cells and photocatalysis, the visible light-responsive TiO 2 materials opened up a route for further developments including photoelectrochemistry-based sensors [100,101] and light-addressable photoelectrochemical optoelectronic devices [102][103][104][105][106].…”
Section: Introductionmentioning
confidence: 99%
“…[301] Ansatz (4) ist tatsächlich ein sehr zuverlässiger Weg, um NSpezies mit geringen bis mittleren Dotierungsgraden in das TiO 2 -Gitter einzubringen. [302,303] Nachteile dieses Verfahrens sind, dass die maximal erreichbaren Ionenflüsse bei Hochenergiebeschleunigern (die bei 50-1000 keV arbeiten) auf etwa 10 18 Ionen cm À2 beschränkt sind und die Implantationstiefe in das Substrat bei einer zudem leicht inhomogenen Verteilung der Dotierungssubstanz nur einige mm beträgt.…”
Section: Dotierungenunclassified
“…[15][16][17][18][19] This can be achieved by tailored anodization in neutral solutions containing NH 4 F 15-17 or NaF 18 or in glycerol/NH 4 F mixtures. 19 We have already used the nanotubular structures to dye-sensitize them in the visible light 4 or as a catalyst support for methanol electrochemical oxidation, 20 and we have shown how to use ion implantation 21,22 and thermal treatment to N-dope the tubes. 23 In the present work, we investigated length effect on photoresponse.…”
mentioning
confidence: 99%