TiO2 based Nanostructured Memristor for RRAM and Neuromorphic Applications: A Simulation Approach

Dongale, Tukaram D.; Patil, Pramod J.; Desai, Netaji K.; Chougule, Pritam P.; Kumbhar, S.S.; Patil, Prasad; Vhatkar, Rajiv S.; Takale, M. V.; Gaikwad, P. K.; Kamat, Rajanish K.

doi:10.48550/arxiv.1601.06503

Cited by 2 publications

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“…The popular version of RRAM is known as a memristor which is modeled around the valency change mechanism [12][13][14][15]. Our group has worked to a greater depth in the area of design, development, modeling, realization and applications of memristors [3][4][5][10][11][12][13][14][15][16][17][18][19].…”

Section: Introductionmentioning

confidence: 99%

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Investigating the Temperature Effects on ZnO, TiO2, WO3 and HfO2 Based Resistive Random Access Memory (RRAM) Devices

Dongale¹,

Khot²,

Mohite³

et al. 2016

J. Nano- Electron. Phys.

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In this paper, we report the effect of filament radius and filament resistivity on the saturated temperature of ZnO, TiO2, WO3 and HfO2 Resistive Random Access Memory (RRAM) devices. We resort to the thermal reaction model of RRAM for the present analysis.The results substantiate decrease in saturated temperature with increase in the radius and resistivity of filament for the investigated RRAM devices. Moreover, a sudden change in the saturated temperature at a lower value of filament radius and resistivity is observed as against the steady change at the medium and higher value of the filament radius and resistivity. Results confirm the dependence of saturated temperature on the filament size and resistivity in RRAM.

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Section: Introductionmentioning

confidence: 99%

“…In light of the literature review and as an extension of our ongoing work [3][4][5][10][11][12][13][14][15][16][17][18][19] the present manuscript, reports our investigations on the effect of temperature on ZnO, TiO2, WO3 and HfO2 based RRAM devices using thermal reaction model reported in the ref. [25].…”

Section: Introductionmentioning

confidence: 99%