Investigating the Temperature Effects on ZnO, TiO2, WO3 and HfO2 Based Resistive Random Access Memory (RRAM) Devices

Abstract

In this paper, we report the effect of filament radius and filament resistivity on the saturated temperature of ZnO, TiO2, WO3 and HfO2 Resistive Random Access Memory (RRAM) devices. We resort to the thermal reaction model of RRAM for the present analysis.The results substantiate decrease in saturated temperature with increase in the radius and resistivity of filament for the investigated RRAM devices. Moreover, a sudden change in the saturated temperature at a lower value of filament radius and resistivity is observed as against the steady change at the medium and higher value of the filament radius and resistivity. Results confirm the dependence of saturated temperature on the filament size and resistivity in RRAM.

Ion induced crystallization and grain growth of hafnium oxide nano-particles in thin-films deposited by radio frequency magnetron sputtering

“…Hafnium oxide has attracted significant interest ever-since it has been envisaged as a potential gate dielectric to replace SiO 2 in metal oxide semiconductor (MOS) device technology [1,2]. Many of its properties still need thorough invest igations, although it finds its place in modern integrated circuits to meet market demands [3][4][5]. Most importantly, the effects of ion irradiation, radiation damage and reliability studies are critical for long-term applications, particularly when used in space and other radiation environments.…”