2017
DOI: 10.1002/smll.201701535
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TiO2 Electron Transport Bilayer for Highly Efficient Planar Perovskite Solar Cell

Abstract: In planar perovskite solar cells, it is vital to engineer the extraction and recombination of electron-hole pairs at the electron transport layer/perovskite interface for obtaining high performance. This study reports a novel titanium oxide (TiO ) bilayer with different Fermi energy levels by combing atomic layer deposition and spin-coating technique. Energy band alignments of TiO bilayer can be modulated by controlling the deposition order of layers. The TiO bilayer based perovskite solar cells are highly eff… Show more

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Cited by 87 publications
(42 citation statements)
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“…[3] In contrast, when TiO x is used as ETL, strong normal hysteresis occurs which is related to charge collection problems. The CB values for TiO x vary in the literature from À4.0 [31] to À4.2, [30] and depend on the fabrication method, [33] therefore in our case, for the low-temperature TiO x the CB can be different.…”
Section: Discussionmentioning
confidence: 95%
“…[3] In contrast, when TiO x is used as ETL, strong normal hysteresis occurs which is related to charge collection problems. The CB values for TiO x vary in the literature from À4.0 [31] to À4.2, [30] and depend on the fabrication method, [33] therefore in our case, for the low-temperature TiO x the CB can be different.…”
Section: Discussionmentioning
confidence: 95%
“…The TiO 2 layer serves as ETL and contributes to the efficient carrier separation, which can significantly reduce the carrier recombination in the interface of CsPbBr 3 /TiO 2. This accounts for the enhanced photocurrent after the interfacial engineering with TiO 2 layer (see Figure a). The CsPbBr 3 PDs with interfacial modification engineering provide a highly efficient way to promote charge carriers separation and extraction.…”
Section: Performance Comparison Of Self‐powered Pds Based On Hybrid Pmentioning
confidence: 87%
“…[ 21] This accounts for the enhanced photocurrent after the interfacial engineering Small 2019, 15,1902135 with TiO 2 layer (see Figure 1a). The CsPbBr 3 PDs with interfacial modification engineering provide a highly efficient way to promote charge carriers separation and extraction.…”
mentioning
confidence: 98%
“…The measured work function of ZTO was 0.1 eV smaller than that of TiO 2 (Figure S11 and S12, Supporting Information). Given that the Fermi level is very close to the conduction band (CB) for n‐type semiconductors, the CB of ZTO was estimated to be about −4.1 eV, an appropriate energy level of ETL for PSCs . The valence band (VB) of ZTO was also obtained to be −7.7 eV by calculation according to the reported bandgap of 3.6 eV .…”
Section: Resultsmentioning
confidence: 99%