Tin-vacancy complex in germanium

Markevich, V. P.; Peaker, А. R.; Hamilton, B.; Litvinov, V. V.; Pokotilo, Yu. M.; Ластовский, С. Б.; Coutinho, J.; Carvalho, Alexandra; Rayson, Mark; Briddon, P.R.

doi:10.1063/1.3574405

Cited by 34 publications

(37 citation statements)

References 33 publications

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“…The origins of these defects may be vacancies, interstitials, impurities, or various vacancy complexes, among others. Table 1 shows a summary of the defects observed using the deep level transient spectroscopy (DLTS) technique [124][125][126][127][128][129][130][131][132][133][134][135][136]. Thus, elaborate control of the defect formation in the Ge LSI process is necessary because Ge-Ge bonds are weaker than those in the conventional Si case.…”

Section: Defect Properties Of Ge 1−x Sn Xmentioning

confidence: 99%

Growth and applications of GeSn-related group-IV semiconductor materials

Zaima

Nakatsuka

Asano

et al. 2016

2016 IEEE Photonics Society Summer Topical Meeting Series (SUM)

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We review the technology of Ge 1−x Sn x -related group-IV semiconductor materials for developing Si-based nanoelectronics. Ge 1−x Sn x -related materials provide novel engineering of the crystal growth, strain structure, and energy band alignment for realising various applications not only in electronics, but also in optoelectronics. We introduce our recent achievements in the crystal growth of Ge 1−x Sn x -related material thin films and the studies of the electronic properties of thin films, metals/Ge 1−x Sn x , and insulators/Ge 1−x Sn x interfaces. We also review recent studies related to the crystal growth, energy band engineering, and device applications of Ge 1−x Sn x -related materials, as well as the reported performances of electronic devices using Ge 1−x Sn x related materials.

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Section: Defect Properties Of Ge 1−x Sn Xmentioning

confidence: 99%

Growth and applications of GeSn-related group-IV semiconductor materials

Zaima

Nakatsuka

Asano

et al. 2016

2016 IEEE Photonics Society Summer Topical Meeting Series (SUM)

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“…10,41 There is consensus in the literature that the split-vacancy configuration is more energetically favorable than the full-vacancy configuration in Si and isostructural semiconductors such as Ge. 10,41,49 Using the present GGA/DFT methodology (as described in Sec. IIB), the binding energy difference between the two configurations is only 0.02 eV in Si.…”

mentioning

confidence: 99%

Effect of tin doping on oxygen- and carbon-related defects in Czochralski silicon

Chroneos

Londos

Sgourou

2011

Journal of Applied Physics

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Experimental and theoretical techniques are used to investigate the impact of tin doping on the formation and the thermal stability of oxygen-and carbon-related defects in electron-irradiated Czochralski silicon. The results verify previous reports that Sn doping reduces the formation of the VO defect and suppresses its conversion to the VO 2 defect. Within experimental accuracy, a small delay in the growth of the VO 2 defect is observed. Regarding carbon-related defects, it is determined that Sn doping leads to a reduction in the formation of the C i O i , C i C s , and C i O i (Si I ) defects although an increase in their thermal stability is observed. The impact of strain induced in the lattice by the larger tin substitutional atoms, as well as their association with intrinsic defects and carbon impurities, can be considered as an explanation to account for the above observations. The density functional theory calculations are used to study the interaction of tin with lattice vacancies and oxygen-and carbon-related clusters. Both experimental and theoretical results demonstrate that tin co-doping is an efficient defect engineering strategy to suppress detrimental effects because of the presence of oxygen-and carbon-related defect clusters in devices.

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“…Interestingly the recent study of Markevich et al [40] correlated the association of Sn-V in phosphorous (P) doped Ge with the suppression of the transient enhanced diffusion of P. The suppression of the vacancy-mediated diffusion of ntype dopants such as P in Ge is a matter of active research and a range of codoping strategies have been proposed [41][42][43]. The introduction of an isovalent dopant in Ge with a high binding energy with respect to V would readily form pairs with vacancies that will have increased thermal stability.…”

Section: Resultsmentioning

confidence: 99%

Strategies to suppress A-center formation in silicon and germanium from a mass action analysis viewpoint

Chroneos

Londos

Sgourou

et al. 2014

J Mater Sci: Mater Electron

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We investigate the impact of tin doping on the formation and the thermal stability of the vacancy-oxygen (VO or A-center) in electron-irradiated Czochralski silicon and its conversion to the VO 2 defects. Previous experimental studies are consistent with the viewpoint that tin (and other oversized isovalent atoms) doping suppresses the formation of the A-center. The results are discussed in view of recent density functional theory calculations, whereas we employ mass action analysis to calculate the impact of isovalent dopants on the suppression of the A-center. We propose point defect engineering strategies to suppress the concentration of the deleterious Acenters in silicon and in related materials such as germanium.2

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Tin-vacancy complex in germanium

Cited by 34 publications

References 33 publications

Growth and applications of GeSn-related group-IV semiconductor materials

Growth and applications of GeSn-related group-IV semiconductor materials

Effect of tin doping on oxygen- and carbon-related defects in Czochralski silicon

Strategies to suppress A-center formation in silicon and germanium from a mass action analysis viewpoint

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