Tin selenide films grown by hot wall epitaxy

Singh, Jasdeep; Bedi, R. K.

doi:10.1063/1.346455

Cited by 51 publications

(35 citation statements)

References 17 publications

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“…The preferred orientation along (111) plane increased with increase in the film thickness, which indicates improvement in crystallinity. A similar result with preferred orientation of (111) plane was also reported by Singh and Bedi [9] and Z. Zainal et al [12] for the SnSe thin films grown by the vacuum evaporation technique. The inter-planar spacing (d hkl ) calculated for the (111) plane having different film thickness using the Bragg's relation are presented in Table 1.…”

Section: X-ray Diffraction Measurementsupporting

confidence: 74%

“…Various deposition techniques are reported for the preparation of SnSe thin films viz. chemical bath deposition [5], atomic layer deposition [6], thermal evaporation [7][8], Hot wall epitaxy [9], flash evaporation [10]. Among them, the thermal evaporation is most commonly employed method because it is very simple, economical, and convenient technique, mostly used in the production of large-area devices.…”

Section: Introductionmentioning

confidence: 99%

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Effect of Film Thickness on Optical Properties of Tin Selenide Thin Films Prepared by Thermal Evaporation for Photovoltaic Applications

Kumar¹,

Parihar²,

Kumar³

et al. 2012

MATERIALS

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Tin Selenide (SnSe) thin films were prepared from the pulverized compound material by thermal evaporation method, to study the effect of film thickness on its structural, and optical properties. The different thicknesses of SnSe thin films, from 150 nm to 500 nm, were grown on glass substrate held at room temperature. X-ray diffraction, atomic force microscopy, transmission measurement, and four-point probe method were used to characterize the thin films. The optical transmission spectra suggests, the energy band gap decreases with increasing the film thickness. The electrical resistivity shows that the films were semi-conducting in behavior having p-type conductivity.

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Section: X-ray Diffraction Measurementsupporting

confidence: 74%

Section: Introductionmentioning

confidence: 99%

Effect of Film Thickness on Optical Properties of Tin Selenide Thin Films Prepared by Thermal Evaporation for Photovoltaic Applications

Kumar¹,

Parihar²,

Kumar³

et al. 2012

MATERIALS

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“…chemical vapor deposition. Vacuum environment techniques such as flash, conventional and reactive evaporation 8,10,12,13 , hot wall epitaxy 11 , atomic layer deposition 30 and pulsed laser deposition 31,32 can also be found in literature. For SnSe 2 thin films synthesis, Hady et al 33 successfully tested conventional thermal evaporation of Sn and Se, and SnSe 2 powders.…”

Section: Introductionmentioning

confidence: 99%

“…Tin monoselenide is a p-type semiconductor with a band gap close to 0.9 eV for indirect allowed transitions 8-10 and 1.2 eV for direct allowed transitions 8,[10][11][12][13][14][15] . SnSe melts congruently at 880 • C. There are two known polymorphous crystalline structures.…”

Section: Introductionmentioning

confidence: 99%

Thermodynamic pathway for the formation of SnSe and SnSe2 polycrystalline thin films by selenization of metal precursors

et al. 2013

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In this work, tin selenide thin films (SnSe x ) were grown on soda lime glass substrates by selenization of dc magnetron sputtered Sn metallic precursors. Selenization was performed at maximum temperatures in the range of 300 • C to 570 • C. The thickness and the composition of the films were analysed using step profilometry and energy dispersive spectroscopy, respectively. The films were structurally and optically investigated by X-Ray diffraction, Raman spectroscopy and optical transmittance and reflectance measurements. X-Ray diffraction patterns suggest that for temperatures between 300 • C and 470 • C the films are composed of hexagonal-SnSe 2 phase. By increasing the temperature, the films selenized at maximum temperatures of 530 • C and 570 • C show orthorhombic-SnSe as the dominant phase with a preferential crystal orientation along the (400) crystallographic plane. Raman scattering analysis allowed the assignment of peaks at 119 cm −1 and 185 cm −1 to the hexagonal-SnSe 2 and 108 cm −1 , 130 cm −1 and 150 cm −1 to the orthorhombic-SnSe phase. All samples present traces of condensed amorphous Se with a characteristic Raman peak located at 255 cm −1 . From optical measurements, the estimated band gap energies for hexagonal-SnSe 2 were close to 0.9 eV and 1.7 eV for indirect forbidden and direct transitions, respectively. The samples with the dominant orthorhombicSnSe phase presented estimated band gap energies of 0.95 eV and 1.15 eV for indirect allowed and direct allowed transitions, respectively.

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“…The layered compounds with a distorted rock salt structure of the orthorhombic space group; among the binary IV-VI semiconductor compounds are tin sulphide (SnS), tin selenide (SnSe), germanium sulphide (GeS) and germanium selenide (GeSe) [1,5,6]. These compounds are also known as lamellar semiconductors which attracted considerable attention because of their important specific properties in the field of optoelectronics [7], holographic recording systems [8], electronic switching [9][10] and infrared production and detection. Moreover SnSe is a semiconductor with a band gap of about 1 eV having a potential as an efficient solar cell material [11][12].…”

Section: Introductionmentioning

confidence: 99%

Growth and Structural Characterization of DVT Grown SnSeReX(X = 0, 0.1, 0.2, 0.3, 0.4) Crystals

Patel¹

2015

IJIRSET

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Among the IV-VI semiconductor compounds, Tin sulphide (SnS), Tin selenide (SnSe), Germanium Sulphide (GeS) and Germanium Selenide (GeSe) have the layered orthorhombic structure with eight atoms per unit cell forming biplanar layers normal to the largest c axis [1][2][3][4]. In the present work, investigation on growth of single crystals of SnSeRex (x = 0, 0.1, 0.2, 0.3, 0.4) by direct vapour transport technique (DVT) using two zone horizontal furnace is reported. Confirmation of stoichiometric proportion of constituent elements and determination of crystal structure of grown crystals is done by Energy Dispersive Analysis of X-rays (EDAX).The structural behaviour was accomplished by X-Ray diffraction (XRD) studies. As a result, it seen to be orthorhombic structure and results are discussed.

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Tin selenide films grown by hot wall epitaxy

Cited by 51 publications

References 17 publications

Effect of Film Thickness on Optical Properties of Tin Selenide Thin Films Prepared by Thermal Evaporation for Photovoltaic Applications

Effect of Film Thickness on Optical Properties of Tin Selenide Thin Films Prepared by Thermal Evaporation for Photovoltaic Applications

Thermodynamic pathway for the formation of SnSe and SnSe2 polycrystalline thin films by selenization of metal precursors

Growth and Structural Characterization of DVT Grown SnSeReX(X = 0, 0.1, 0.2, 0.3, 0.4) Crystals

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