Tin oxide with a p–n heterojunction ensures both UV and visible light photocatalytic activity

Excitation dependent recombination studies on SnO2/TiO2electrospun nanofibers

“…Ghosh et.al 14 reported that the onset and band edges were occurs at 3.17 and 3.02 eV are due to indirect transitions in rutile TiO 2 , but they are not related to the occupancy of the shallow trap states. In the present study there are no sharp bands observed in SNR and STNF, in contrast with the literature 56,57 . The synthesis methods and structural changes can affect electronic and optical properties of STNF band edge 56,58 and effect coupling 59 between TNF and SNR system.…”

Determination of some basic physical parameters of SnO based on SnO/Si pn heterojunctions

“…SnO has been studied as the anode material of lithium rechargeable batteries, 7 the channel material of p-type or ambipolar thin-film transistors, [8][9][10][11][12] and the p-type semiconductor material in the pn junctions. [13][14][15][16] The pn junctions usually serve as "building blocks" in the semiconductor devices such as solar cells, light-emitting diodes, photodetectors, rectifier diodes, and bipolar transistors. According to the literature, p-SnO/n-SnO, 13 p-SnO/nZnO, 14,15 and p-SnO/n-SnO 2 16 junctions have been studied previously.…”

“…According to the literature, p-SnO/n-SnO, 13 p-SnO/nZnO, 14,15 and p-SnO/n-SnO 2 16 junctions have been studied previously. The energy band diagrams 14,16 of the pn junctions were depicted by using the optical direct bandgap (2.5-3.4) of SnO, 16,17 regardless of the fact that SnO has an indirect fundamental gap (0.5-0.7 eV). 8,18 Basically, the fundamental gap should be applied in the energy band diagram of the pn junctions, because that the energy band diagram of a pn junction describes the electrical behaviors, e.g., the band offsets for electron and hole transport.…”

Tunable Transformation Between SnS and SnOx Nanostructures via Facile Anodization and Their Photoelectrochemical and Photocatalytic Performance

“…The HRTEM image reveals the formation of SnO x /SnS heterostructures in the sample (Figure b). The lattice fringes of ≈0.286 nm correspond to the (111) plane of SnS, while the fringes of 0.30 and 0.24 nm represent the (101) and (002) planes of SnO, respectively . The elemental mapping (Figure d–g) also confirms the homogeneous distribution of O, Sn, and S elements in the sample, indicating the close bonding between SnS and SnO x .…”

“…On the other hand, multi‐heterojunction structures (SnS/SnO, SnS/SnO 2 , and SnO 2 /SnO) coexist in the SnS/SnO x structures. The conduction and valence bands of SnO 2 are both more positive than SnS and SnO, while SnO exhibits a more negative conduction band than SnS (Figure f). Upon irradiation, the photoinduced electrons are transferred from the conduction band of SnO to the conduction band of SnS and then to the conduction band of SnO 2 , or directly from SnO to SnO 2 , while the photoexcited holes accumulate in the valence band of SnO or SnS, reducing the charge recombination possibility and increasing their lifetime.…”