Tin induced crystallisation of hydrogenated amorphous silicon thin films

Jeon, Minsung; Jeong, Chaehwan; Kamisako, K.

doi:10.1179/026708309x12454008169500

Cited by 15 publications

(22 citation statements)

References 15 publications

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“…Evidently, the onset of crystallization of a-Si occurs at 300°C by contacting with the Sn metal. Jeon et al have also reported Sn-induced crystallization of a-Si at 300°C [12]. Significantly, there is no evidence for the formation of silicides in the Sn-Si system even after annealing at 500°C.…”

Section: Resultsmentioning

confidence: 93%

“…In contrast to these metals, Sn forms an eutectic alloy with Si with a relatively low eutectic temperature of 232°C. However, not much work has been reported on Sn-induced crystallization of a-Si films [12]. Hence, in the present work, the growth of Sn-Si nanocomposite thin films by Sn MIC of a-Si thin films is reported.…”

Section: Introductionmentioning

confidence: 94%

“…However, literature on nanocomposite thin films consisting of metal and elemental semiconductors is very limited [1][2][3][4]. One of the approaches to form metal-nanocrystalline silicon nanocomposite films is the process of metal-induced crystallization (MIC) [5][6][7][8][9][10][11][12]. The normal crystallization temperature of silicon is 973 K or higher.…”

Section: Introductionmentioning

confidence: 99%

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Growth and optical properties of Sn–Si nanocomposite thin films

Mohiddon

Krishna

2012

J Mater Sci

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The growth and optical properties of nanocomposite thin films comprising of nanocrystalline Sn and Si are reported. The nanocomposite films are produced by thermal annealing of bilayers of Sn and Si deposited on borosilicate glass substrates at various temperatures from 300 to 500°C for 1 h in air. X-ray diffraction reveals that the as-deposited bilayers consist of nanocrystalline Sn films with a crystallite size of 30 nm, while the Si thin films are amorphous. There is onset of crystallinity in Si on annealing to 300°C with the appearance of the (111) peak of the diamond cubic structure. The crystallite size of Si increases from 5 to 18 nm, whereas the Sn crystallite size decreases with increase in annealing temperature. Significantly, there is no evidence for any Sn-Si compound, and therefore it is concluded that the films are nanocomposites of Sn and Si. Measured spectral transmittance curves show that the films have high optical absorption in the as-deposited form which decreases on annealing to 300°C. The films show almost 80 % transmission in the visible-near infrared region when the annealing temperature is increased to 500°C. There is concomitant decrease in refractive index from 4.0, at 1750 nm, for the as-deposited film, to 1.88 for the film annealed at 500°C. The optical band gap of the films increases on annealing (from 1.8 to *2.9 eV at 500°C). The Sn-Si nanocomposites have high refractive index, large band gap, and low optical absorption, and can therefore be used in many optical applications.

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Section: Resultsmentioning

confidence: 93%

Section: Introductionmentioning

confidence: 94%

Section: Introductionmentioning

confidence: 99%

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Growth and optical properties of Sn–Si nanocomposite thin films

Mohiddon

Krishna

2012

J Mater Sci

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“…One of the promising ways in this direction is the application of the phenomenon of metal-induced crystallization (MIC) of amorphous silicon (a-Si) [13][14][15][16][17]. In particular, a possibility to form Si nanocrystals 2-7 nm in dimensions and with a phase volume fraction of up to 80% in the a-Si matrix with the help of the low-temperature tin-induced Si crystallization was demonstrated in [18][19][20].…”

Section: Introductionmentioning

confidence: 99%

Tin-Induced Crystallization of Amorphous Silicon under Pulsed Laser Irradiation

et al. 2017

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“…One of promising ways in this direction is the use of metal-induced crystallization (MIC) of amorphous silicon [13][14][15][16][17]. In particular, the possibility to form Si nanocrystals in amorphous Si matrix at 2 to 5 nm sizes and the phase volume fraction up to 80% was shown by means of tin-stimulated crystallization of amorphous Si at low temperatures [18][19][20].…”

Section: Introductionmentioning

confidence: 99%

Tin-induced crystallization of amorphous silicon assisted by a pulsed laser irradiation

Neimash¹

2017

Semicond. Phys. Quantum Electron. Optoelectron.

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Abstract. The process of tin-induced crystallization of amorphous silicon under the influence of different types of laser irradiation was investigated using the method of Raman scattering by thin-film Si-Sn-Si structures. The dependences of the size and concentration of Si nanocrystals on the power of laser radiation was experimentally evaluated and analyzed. As sources of excitation pulse laser radiation with the pulses duration equal to 20 ns and 150 μs and wavelengths equal to 535 and 1070 nm was used. The possibility of efficient tin-induced transformation of silicon from amorphous phase to crystalline one in the 200-nm thick layers of a-Si under the action of laser pulses with duration equal to 20 ns was shown. The spatial and temporal distributions of laser induced temperature rise was calculated to interpret experimental results.

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Tin induced crystallisation of hydrogenated amorphous silicon thin films

Cited by 15 publications

References 15 publications

Growth and optical properties of Sn–Si nanocomposite thin films

Growth and optical properties of Sn–Si nanocomposite thin films

Tin-Induced Crystallization of Amorphous Silicon under Pulsed Laser Irradiation

Tin-induced crystallization of amorphous silicon assisted by a pulsed laser irradiation

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