Tin dioxide quantum dots coupled with graphene for high-performance bulk-silicon Schottky photodetector

Zheng, Zhaoqiang; Yao, Jiandong; Zhu, Lianfeng; Jiang, Wei; Wang, Bing; Yang, Guowei; Li, Jingbo

doi:10.1039/c8mh00500a

Cited by 64 publications

(47 citation statements)

References 60 publications

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“…The Raman spectra of the In 2 S 3 , graphene, and In 2 S 3 /graphene/Si are investigated in Figure e. For graphene (blue line), the main peaks centered at 1573 and 2676 cm −1 can be attributed to the G peak and 2D peak, respectively . Here, the intensity ratio of 2D/G is larger than 2, the defect‐induced D band located at ≈1350 cm −1 is very small.…”

Section: Resultsmentioning

confidence: 99%

2D In₂S₃ Nanoflake Coupled with Graphene toward High‐Sensitivity and Fast‐Response Bulk‐Silicon Schottky Photodetector

Zheng

Yao

et al. 2019

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Silicon‐based electronic devices, especially graphene/Si photodetectors (Gr/Si PDs), have triggered tremendous attention due to their simple structure and flexible integration of the Schottky junction. However, due to the relatively poor light–matter interaction and mobility of silicon, these Gr/Si PDs typically suffer an inevitable compromise between photoresponsivity and response speed. Herein, a novel strategy for coupling 2D In2S3 with Gr/Si PDs is demonstrated. The introduction of the double‐heterojunction design not only strengthens the light absorption of graphene/Si but also combines the advantages of the photogating effect and photovoltaic effect, which suppresses the dark current, accelerates the separation of photogenerated carriers, and brings photoconductive gain. As a result, In2S3/graphene/Si devices present an ultrahigh photoresponsivity of 4.53 × 104 A W−1 and fast response speed less than 40 µs, simultaneously. These parameters are an order of magnitude higher than pristine Gr/Si PDs and among the best values compared with reported 2D materials/Si heterojunction PDs. Furthermore, the In2S3/graphene/Si PD expresses outstanding long‐term stability, with negligible performance degradation even after 1 month in air or 1000 cycles of operation. These findings highlight a simple and novel strategy for constructing high‐sensitivity and ultrafast Gr/Si PDs for further optoelectronic applications.

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Section: Resultsmentioning

confidence: 99%

2D In₂S₃ Nanoflake Coupled with Graphene toward High‐Sensitivity and Fast‐Response Bulk‐Silicon Schottky Photodetector

Zheng

Yao

et al. 2019

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Section: Low‐dimensional Semiconductor Nanomaterialsmentioning

confidence: 99%

“…And, Figure D shows the size distribution histogram of SnO 2 QDs and its fitting curve. The results show that the synthesized QDs have very small sizes with a mean value of approximately 3.64 nm . This special structure leads to a unique property.…”

Section: Low‐dimensional Semiconductor Nanomaterialsmentioning

confidence: 99%

“…Moreover, the presence of QDs allows the device to have high flexibility while maintaining high responsiveness. Besides, the Fermi level of the graphene can be tuned by coupling some semiconductor QDs with graphene . For 2D MoS 2 , building a 2D/0D heterostructure is a good way to improve light detection .…”

Section: Low‐dimensional Semiconductor Nanomaterialsmentioning

confidence: 99%

“…0D QDs can be obtained from many 2D materials. In addition to B‐P and graphene, TMDs are also an important class of QD materials . Different electronic structures, sizes, thicknesses, and so on, have a great influence on the properties .…”

Section: Low‐dimensional Semiconductor Nanomaterialsmentioning

confidence: 99%

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Recent advances in low‐dimensional semiconductor nanomaterials and their applications in high‐performance photodetectors

Fang

Zhou

Xiao

et al. 2019

InfoMat

108

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Low‐dimensional (including two‐dimensional [2D], one‐dimensional [1D], and zero‐dimensional [0D]) semiconductor materials have great potential in electronic/optoelectronic applications due to their unique structure and characteristics. Many 2D (such as transition metal dichalcogenides and black phosphorus) and 1D (such as NWs) materials have demonstrated superior performance in field effect transistors, photodetectors (PDs), and some flexible devices. And in some hybrid structures of 0D materials and 1D or 2D materials, the modification of 1D and 2D devices by 0D materials is embodied. This type of hybrid heterostructure has a larger performance optimization compared with the original. In the application of PDs, the variety of low‐dimensional materials and properties enable wide‐spectrum detection from ultraviolet UV to infrared, which provide a potential option for PDs under various conditions. For flexible electronic devices, high performance and mechanical stability are two important features. Low‐dimensional materials offer unparalleled advantages in flexible devices. In this review, we will focus on the various low‐dimensional materials that have been extensively studied and their applications in the electronics/optoelectronic and flexible electronics. From the composition and lattice structure of materials (including alloys) to the construction of various devices and heterostructures, we will introduce their application and recent development under various conditions. These works can provide valuable guidance for the construction and application of more high‐performance and multifunctional devices.

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All‐Dielectric Nanostructure Fabry–Pérot‐Enhanced Mie Resonances Coupled with Photogain Modulation toward Ultrasensitive In₂S₃ Photodetector

Yan

Yao

et al. 2020

Adv Funct Materials

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As the fresh blood of 2D family, non‐layered 2D materials (2DNLMs) have demonstrated great potential in the application of next‐generation optoelectronic devices. However, stemming from the weak light absorption brought by atomically thin thickness and the interfacial recombination brought by surface dangling bonds, traditional 2DNLM photodetectors are always accompanied by limited performance. Herein, a structure that integrates Si nanopillar array and non‐layered 2D In2S3 to construct an ultrasensitive photodetector is designed. In particular, periodically Si nanopillars can act as Fabry–Pérot‐enhanced Mie resonators that can effectively control and enhance the light absorption of 2D In2S3. On the other hand, a vertical built‐in electric field is introduced in the In2S3 channel to capture photogenerated holes and leave electrons recycling in In2S3, obtaining a high photogain. Benefiting from these two mechanisms, this proposed photodetector presents a high responsivity of 4812 A W−1 and short rise/decay time of 5.2/4.0 ms at the wavelength of 405 nm. Especially, a high light on–off ratio greater than 106 and a record‐high detectivity of 5.4 × 1015 Jones are achieved, representing one of the most sensitive photodetectors based on 2D materials. This deliberate device design concept suggests an effective scheme to construct high‐performance 2DNLM optoelectronic devices.

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Tin dioxide quantum dots coupled with graphene for high-performance bulk-silicon Schottky photodetector

Abstract: Commercial photodetectors have been dominated by bulk silicon (B-Si) due to the maturity of Si technology.

Cited by 64 publications

References 60 publications

2D In₂S₃ Nanoflake Coupled with Graphene toward High‐Sensitivity and Fast‐Response Bulk‐Silicon Schottky Photodetector

2D In₂S₃ Nanoflake Coupled with Graphene toward High‐Sensitivity and Fast‐Response Bulk‐Silicon Schottky Photodetector

Recent advances in low‐dimensional semiconductor nanomaterials and their applications in high‐performance photodetectors

All‐Dielectric Nanostructure Fabry–Pérot‐Enhanced Mie Resonances Coupled with Photogain Modulation toward Ultrasensitive In₂S₃ Photodetector

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Tin dioxide quantum dots coupled with graphene for high-performance bulk-silicon Schottky photodetector

Abstract: Commercial photodetectors have been dominated by bulk silicon (B-Si) due to the maturity of Si technology.

Cited by 64 publications

References 60 publications

2D In2S3 Nanoflake Coupled with Graphene toward High‐Sensitivity and Fast‐Response Bulk‐Silicon Schottky Photodetector

2D In2S3 Nanoflake Coupled with Graphene toward High‐Sensitivity and Fast‐Response Bulk‐Silicon Schottky Photodetector

Recent advances in low‐dimensional semiconductor nanomaterials and their applications in high‐performance photodetectors

All‐Dielectric Nanostructure Fabry–Pérot‐Enhanced Mie Resonances Coupled with Photogain Modulation toward Ultrasensitive In2S3 Photodetector

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2D In₂S₃ Nanoflake Coupled with Graphene toward High‐Sensitivity and Fast‐Response Bulk‐Silicon Schottky Photodetector

2D In₂S₃ Nanoflake Coupled with Graphene toward High‐Sensitivity and Fast‐Response Bulk‐Silicon Schottky Photodetector

All‐Dielectric Nanostructure Fabry–Pérot‐Enhanced Mie Resonances Coupled with Photogain Modulation toward Ultrasensitive In₂S₃ Photodetector