TiN deposition and ion current distribution for trench target by plasma-based ion implantation and deposition

Yukimura, Ken; Ma, Xinxin; Ikehata, Takashi

doi:10.1016/j.surfcoat.2004.08.133

Cited by 4 publications

(2 citation statements)

References 11 publications

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“…The efforts for PSII development have been directed to improve surface hardness, wear and corrosion resistance [3][4]. Recently, the process has been applied to metal-ion plasmas formed by pulsed high-voltage glow discharge (for metal PSII [5][6] and for cathodic arcs [7][8]), for a hybrid implantation/deposition process with long (millisecond) cathodic arc pulses and short (microsecond) target bias pulses.…”

Section: Introductionmentioning

confidence: 99%

Metal Plasma Source Ion Implantation Using a Pulsed Cathodic Arc

Chun

2007

MSF

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Combining nano-designed plasma source ion implantation and deposition (PSII&D) method has been developed with the pulsed cathodic arc plasma to make a processing system suitable for surface modification of materials such as metals, plastics and ceramics. By controlling the arc plasma pulse and the target pulse, the surface modification can be changed from plasma deposition to ion implantation. Various versions of applying high-voltage pulse bias are described and compared with other methods. Microstructural changes of the nanometered gold films with/without a high voltage bias, concentration profiles of implanted aluminum ions on the surfaces of complex-shaped trench are discussed.

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Section: Introductionmentioning

confidence: 99%

Metal Plasma Source Ion Implantation Using a Pulsed Cathodic Arc

Chun

2007

MSF

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“…The present article is a continuation of a series of articles on the generation and application of zirconium plasmas,9,10 and titanium cathodic arcs 11,12. A vacuum arc is generated by separating a pin electrode from the zirconium cathode in an argon to oxygen gas mixture.…”

Section: Introductionmentioning

confidence: 99%

Parametric Study of Zirconium Oxide Films Using Plasma‐Based Ion Implantation and Deposition

Yukimura

Ono

Akashi

et al. 2005

Plasma Processes & Polymers

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Summary: Zirconium oxide films were prepared using a zirconium arc discharge in a gas mixture of argon‐diluted with oxygen, where the gas flow rate was varied from 100 sccm to 600 sccm, which corresponded to a gas pressure of 1.9 to 4.6 Pa. The voltage applied to the target was, unless otherwise specified, set to a value of −5 kV, with a pulse width of 20 µs at a repetition rate of 400 Hz. It was observed from XPS measurements that the oxygen and zirconium were mostly present in the deposited film in a stoichiometric state. The prepared films changed from amorphous state to orthorhombic structure by increasing the pressure of the gas mixture. At an applied voltage as high as −9 kV, the crystal size becomes small due to high energy ion bombardment. Thus, the structure of the prepared film is changed into a micro‐structural state. By applying a pulse voltage of −5 kV to the substrate, the deposited film shows a smooth surface, with roughness which is smaller by a factor of 1/7 compared to that in the absence of the applied voltage.

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