Timing characteristics of Ce doped Gd3Ga3Al2O12 single crystals in comparison with CsI(Tl) scintillators

Tyagi, Mohit; Desai, Vimal; Singh, Amit Kumar; Singh, Surendra; Sen, Shashwati; Nayak, B. K.; Gadkari, S. C.

doi:10.1002/pssa.201532252

Cited by 11 publications

(2 citation statements)

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“…Various co‐dopants have been adopted for different purposes in garnets . Divalent Mg 2+ and Ca 2+ have already been adopted for the purpose of improving scintillation properties in various garnets; in GGAG:Ce, boron was used as well . Improvement of light yield was reported for LuAG:Ce and YAG:Ce .…”

Section: Introductionmentioning

confidence: 99%

Garnet Scintillators of Superior Timing Characteristics: Material, Engineering by Liquid Phase Epitaxy

Průša

Kučera

Babin

et al. 2017

Advanced Optical Materials

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Using liquid phase epitaxy, the Mg co-doped multicomponent garnet film scintillators of composition (Ce 0.01 Lu 0.27 Gd 0.74 ) 3-x Mg x (Ga 2.48 Al 2.46 )O 12 , x = 0-0.002 (0-700 at. ppm) are prepared. Following luminescence and scintillation characteristics and their dependence on Mg concentration are studied: photoluminescence emission and excitation spectra, radioluminescence spectra, photoluminescence and scintillation decay curves, light yield, energy resolution, and afterglow. At lower Mg concentration, the timing characteristics are slightly improved, while light yield and energy resolution are not negatively influenced. At higher Mg concentration, scintillation decay is significantly accelerated, although light yield is somewhat reduced. Afterglow values become extraordinarily low for a garnet scintillator, at least two times better than the best values published so far, which paves the way for their application in fast frame imaging applications. A mechanism of the improvement is shortly discussed.

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Section: Introductionmentioning

confidence: 99%

Garnet Scintillators of Superior Timing Characteristics: Material, Engineering by Liquid Phase Epitaxy

Průša

Kučera

Babin

et al. 2017

Advanced Optical Materials

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“…The light yield improved from 54000 ph/MeV for crystals grown in partial oxygen ambient to more than 60000 ph/MeV for the crystals grown in argon and post growth annealed in air. The energy resolution also improved to 5.8% at 662 keV for the annealed crystals [18]. The best energy resolution of about 4.7% is reported for a GGAG crystal having 1% Ce and coupled with APD (Hamamatsu S8664-010) [8].…”

Section: Resultsmentioning

confidence: 94%

Improvement of the scintillation properties of Gd₃ Ga₃ Al₂ O₁₂ :Ce,B single crystals having tailored defect structure

Tyagi

Singh

et al. 2015

Phys. Status Solidi RRL

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A novel approach is reported to minimize various defect centers in Ce doped Gd3Ga3Al2O12 single crystals to improve the scintillation properties. The crystals of Gd3Ga3Al2O12 codoped with 0.2 at% Ce and B (GGAG:Ce,B) have been grown in air and argon ambient using the Czochralski technique. The scintillation light output of crystals grown in Ar ambient was significantly increased after annealing the crystals in air. The measured light output of 60000 ph/MeV for annealed crystals is the highest value reported among this class of materials. As a consequence, the energy resolution at 662 keV gamma‐rays from a 137Cs source was improved from 8% for the crystals grown in air to 6% for crystals grown in Ar and subsequently annealed in air. Further, the thermal quenching energy of photoluminescence (PL) emission was increased to be 470 meV for the annealed crystals. The thermoluminescence (TL) measurements suggest that the crystals grown in Ar ambient and post‐growth annealed in air may have a lesser concentration of trap centers which subsequently lead to the improvement in optical and scintillation properties leading to a superior detector performance. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)

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Ceramic Scintillation Materials—Approaches, Challenges and Possibilities

Karpyuk

Dosovitskiy

Kuznetsova

et al. 2019

Springer Proceedings in Physics

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Timing characteristics of Ce doped Gd₃Ga₃Al₂O₁₂ single crystals in comparison with CsI(Tl) scintillators

Cited by 11 publications

References 25 publications

Garnet Scintillators of Superior Timing Characteristics: Material, Engineering by Liquid Phase Epitaxy

Garnet Scintillators of Superior Timing Characteristics: Material, Engineering by Liquid Phase Epitaxy

Improvement of the scintillation properties of Gd₃ Ga₃ Al₂ O₁₂ :Ce,B single crystals having tailored defect structure

Ceramic Scintillation Materials—Approaches, Challenges and Possibilities

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Timing characteristics of Ce doped Gd3Ga3Al2O12 single crystals in comparison with CsI(Tl) scintillators

Cited by 11 publications

References 25 publications

Garnet Scintillators of Superior Timing Characteristics: Material, Engineering by Liquid Phase Epitaxy

Garnet Scintillators of Superior Timing Characteristics: Material, Engineering by Liquid Phase Epitaxy

Improvement of the scintillation properties of Gd3 Ga3 Al2 O12 :Ce,B single crystals having tailored defect structure

Ceramic Scintillation Materials—Approaches, Challenges and Possibilities

Contact Info

Product

Resources

About

Timing characteristics of Ce doped Gd₃Ga₃Al₂O₁₂ single crystals in comparison with CsI(Tl) scintillators

Improvement of the scintillation properties of Gd₃ Ga₃ Al₂ O₁₂ :Ce,B single crystals having tailored defect structure