Time-resolved photoluminescence studies of an ionized donor-bound exciton in GaN

Abstract

High electron mobility through the edge states in random networks of c-axis oriented wedge-shaped GaN nanowalls grown by molecular beam epitaxy Appl. Phys. Lett. 101, 132109 (2012) InGaP-based InGaAs quantum dot solar cells with GaAs spacer layer fabricated using solid-source molecular beam epitaxy Appl. Phys. Lett. 101, 133110 (2012) Comparative study of surface recombination in hexagonal GaN and ZnO surfaces J. Appl. Phys. 112, 063509 (2012) Self-assembly of InAs ring complexes on InP substrates by droplet epitaxy J. Appl. Phys. 112, 063510 (2012) Reduced thermal quenching in indium-rich self-organized InGaN/GaN quantum dots

Optical Spectroscopy of Mg- and C-Related Donor and Acceptor Levels in GaN Grown by MBE

“…Thus, it seems to be very unlikely that a (D + , X) complex yields the dominant emission in these samples. Our value is in good agreement with E B (Mg 0 , X) = (19 AE 4) [3] and (20 to 21.5) meV [6].…”

“…[3,4] while the (Mg 0 , X) binding energy has been controversially discussed. Stepniewski et al [5] ascribed a bound-exciton emission line yielding a binding energy of about 11.5 meV to the (Mg 0 , X) complex whereas [4,6] attribute this emission to a (D + , X) complex. From the p-type conductivity of those samples showing the (Mg 0 , X) emission we conclude that the acceptor concentration is much higher than the donor concentration.…”

Time-resolved photoluminescence studies of free and donor-bound exciton in GaN grown by hydride vapor phase epitaxy

“…[8][9][10][11] In contrast, our data display single exponential decays over several times the radiative recombination lifetime, and a temperature dependence simply understood as the thermal population of excited exciton states. Radiative recombination lifetime for free excitons of 375 ps at 60 K has been reported by Hess et al 8 in lateral overgrowth metalorganic vapor phase epitaxy ͑MOVPE͒ material.…”

Plasma-Assisted MBE Growth of GaN on HVPE-GaN Substrates

“…2c. The Mg doped sample also displayed the acceptor bound exciton at 358.9 nm (3.461 eV), as identified by Mair et al [7]. For samples grown at 740 C temperatures, the DAP peak intensity exceeds the near band edge peak intensity.…”