Time-resolved photoluminescence as a probe of internal electric fields in GaN-(GaAl)N quantum wells

Lefèbvre, Pierre; Allègre, J.; Gil, Bernard; Mathieu, H.; Grandjean, Nicolas; Leroux, M.; Massies, J.; Bigenwald, Pierre

doi:10.1103/physrevb.59.15363

Cited by 161 publications

(98 citation statements)

References 25 publications

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“…This statement has been experimentally verified by time-resolved spectroscopy [5,6]. What was found is both the red shift due to quantum confined stark effect and a dramatic increase in the recombination time with increasing well width [7].…”

Section: Introductionmentioning

confidence: 53%

Exciton localization behaviour in different well width undoped GaN/Al0.07Ga0.93N nanostructures

Sabooni

Esmaeili

Haratizadeh³

et al. 2007

Opto-Electronics Review

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We report results from optical spectroscopy such as photoluminescence (PL) and time resolved photo-luminescence (TRPL) techniques from different well width MOCVD grown GaN/Al0.07Ga0.93N MQW samples. There is evidence of localization at low temperature in all samples. The decay time of all samples becomes non-exponential when the detection energy is increased with respect to the peak of the emission. Localization of carriers (excitons) is demonstrated by the “S-shape” dependences of the PL peak energies on the temperature. The time-resolved PL spectra of the 3-nm well multi quantum wells reveal that the spectral peak position shifts toward lower energies as the decay time increases and becomes red-shifted at longer decay times. There is a gradient in the PL decay time across the emission peak profile, so that the PL process at low temperatures is a free electron-localized hole transition.

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Section: Introductionmentioning

confidence: 53%

Exciton localization behaviour in different well width undoped GaN/Al0.07Ga0.93N nanostructures

Sabooni

Esmaeili

Haratizadeh³

et al. 2007

Opto-Electronics Review

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“…4 The net polarization and consequent internal electric fields have been shown to be detrimental to the performance of optoelectronic devices. [5][6][7][8][9] Polarization discontinuities lead to band bending and result in the quantum confined Stark effect in ͑0001͒ oriented III-nitride quantum well ͑QW͒ structures. The consequences of this effect include decreased recombination efficiency, redshifted emission, and blueshifting of the emission with increasing drive current.…”

Section: Introductionmentioning

confidence: 99%

Strain-induced polarization in wurtzite III-nitride semipolar layers

Романов

Baker

Nakamura

et al. 2006

Journal of Applied Physics

665

487

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This paper presents growth orientation dependence of the piezoelectric polarization of InxGa1−xN and AlyGa1−yN layers lattice matched to GaN. This topic has become relevant with the advent of growing nitride based devices on semipolar planes [A. Chakraborty et al., Jpn. J. Appl. Phys., Part 2 44, L945 (2005)]. The calculations demonstrate that for strained InxGa1−xN and AlyGa1−yN layers lattice matched to GaN, the piezoelectric polarization becomes zero for nonpolar orientations and also at another point ≈45° tilted from the c plane. The zero crossover has only a very small dependence on the In or Al content of the ternary alloy layer. With the addition of spontaneous polarization, the angle at which the total polarization equals zero increases slightly for InxGa1−xN, but the exact value depends on the In content. For AlyGa1−yN mismatched layers the effect of spontaneous polarization becomes important by increasing the crossover point to ∼70° from c-axis oriented films. These calculations were performed using the most recent and convincing values for the piezoelectric and elasticity constants, and applying Vegard’s law to estimate the constants in the ternary InxGa1−xN and AlyGa1−yN layers.

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“…A sizable redshift of the ground-level transitions of wurtzite nitride semiconductor quantum wells has been observed by various groups [42][43][44][45] for increasing well width. This phenomenon is sometimes accompanied by the concomitant reduction of the oscillator strength and by the increase of the decay time of the transition.…”

Section: Polarization Effects In Nitride Semiconductorsmentioning

confidence: 99%

Buried stressors in nitride semiconductors: Influence on electronic properties

Романов

Waltereit

Speck

2005

Journal of Applied Physics

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An analysis is presented on the effect of the strain field originating from a subsurface stressor ͑point source of dilatation or a dilatating ellipsoidal inclusion͒ on the electronic properties of nitride semiconductors. With good accuracy, real quantum dots can be modeled as such stressors. We consider the following material structure design: a uniform semi-infinite GaN matrix with a buried stressor or a GaN matrix with a single ͑In,Ga͒N quantum well, which is grown pseuodomorphically between the stressor and the free surface. We utilize isotropic elasticity to determine the strain field in the structures under investigation. We then apply a k·p perturbation theory approach to examine the shifts of the conduction and valence band edges caused by the stressor. We find lateral confinement for electrons and holes, which can be proposed for the realization of strain-induced quantum dots in the quantum well.

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Time-resolved photoluminescence as a probe of internal electric fields in GaN-(GaAl)N quantum wells

Cited by 161 publications

References 25 publications

Exciton localization behaviour in different well width undoped GaN/Al0.07Ga0.93N nanostructures

Exciton localization behaviour in different well width undoped GaN/Al0.07Ga0.93N nanostructures

Strain-induced polarization in wurtzite III-nitride semipolar layers

Buried stressors in nitride semiconductors: Influence on electronic properties

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