Time-resolved photocurrents in quantum well/dot infrared photodetectors with different optical coupling structures

Chen, Zhihui; Hellström, Staffan; Yu, Zhongyuan; Qiu, Min; Fu, Ying

doi:10.1063/1.3678637

Cited by 18 publications

(6 citation statements)

References 16 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…To confirm the enhanced excitation of QD at λ = 416 nm by the CPC structure, we perform a three dimensional finite difference time domain method (3D-FDTD) [41][42][43][44] in a region of (x, y, z) = (−0.15:0.15, −0.15:0.15, −3:1) µm with periodic boundaries in the x and y directions and perfectly matched layers (PMLs) absorbing boundaries 45 in the z direction. The normal-direction incident s-polarized electromagnetic plane wave is simulated by a pulse with a central wavelength of 416 nm and a narrow FWHM of 2.5 nm, s and p-polarized plane waves will perform the same for the normal direction.…”

Section: Enhanced Excitation and Emission Of Quantum Dots In The Cpc ...mentioning

confidence: 99%

Enhanced normal-direction excitation and emission of dual-emitting quantum dots on a cascaded photonic crystal surface

et al. 2014

Self Cite

View full text Add to dashboard Cite

Section: Enhanced Excitation and Emission Of Quantum Dots In The Cpc ...mentioning

confidence: 99%

Enhanced normal-direction excitation and emission of dual-emitting quantum dots on a cascaded photonic crystal surface

et al. 2014

Self Cite

View full text Add to dashboard Cite

“…Дальнейшее увеличение эффективности детектируемого излучения, особенно в случае матричных детекторов, требует разработки новых подходов, обеспечивающих более эффективные механизмы взаимодействия электромагнитного поля с электронной подсистемой КЯ. Один из таких подходов, перспективных для создания уз-кополосных ФПУ, основан на управлении полями внутри активного элемента с помощью резонаторов различного типа [10][11][12][13][14][15]. Отдельное внимание уделяется гибридным ФПУ, в которых управление фоточувствительностью осуществляется за счет установления связи между рабочим электронным переходом КЯ с ближнепольными резонансами различного типа.…”

Section: Introductionunclassified

Экситонные эффекты и примесно-дефектное излучение в GaAs/AlGaAs-структурах, применяемых для изготовления детекторов среднего ИК-диапазона

Кривобок¹,

Litvinov²,

Николаев³

et al. 2019

Физика И Техника Полупроводников

View full text Add to dashboard Cite

A series of undoped GaAs/Al_ x Ga_1 –_ x As multiple quantum well heterostructures, whose doped analogs are used for the production of photodetectors operating in the spectral range 8–12 μm, is fabricated by molecular-beam epitaxy. For the heterostructures, the spectral position of absorption lines corresponding to the allowed transitions between quantum-confined electron and hole levels in GaAs layers is established. The influence of impurity–defect states on the luminescence and absorption spectra of quantum wells is studied. The excitonic corrections for the allowed transitions are determined in relation to the quantum-well width and the aluminum content in the barrier layers. The role of excitonic effects in restoring the structure of single-electron states from interband-absorption spectra (luminescence-excitation spectra) and the relationship between these states and the working region of IR photodetectors based on GaAs/Al_ x Ga_1 –_ x As quantum wells are discussed.

show abstract

“…Efficient broadband electromagnetic absorption is significant in solar energy harvesting 1 2 , infrared photodetection 3 , and stealth coating 4 .…”

mentioning

confidence: 99%

“…However, it is only applicable to geometrical optics and could be surpassed by the light trapping in sub-wavelength nanostructures by combining the reflection, diffraction, and refraction effects. A lot of optical coupling structures have been designed to enhance the electromagnetic absorption 2 3 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 , and various optimized light trapping structures are explored by optimization algorithms 23 24 . Most of these structures acted on either visible wavelength range or infrared wavelength range.…”

mentioning

confidence: 99%

See 1 more Smart Citation

Enhanced Broadband Electromagnetic Absorption in Silicon Film with Photonic Crystal Surface and Random Gold Grooves Reflector

Chen

Qiao

Yang

et al. 2015

Sci Rep

Self Cite

View full text Add to dashboard Cite

We show a hybrid structure consisting of Si film with photonic crystal surface and random triangular gold grooves reflector at the bottom, which is capable of realizing efficient, broad-band, wide-angle optical absorption. It is numerically demonstrated that the enhanced absorption in a broad wavelength range (0.3–9.9 μm) due to the scattering effect of both sides of the structure and the created resonance modes. Larger thickness and period are favored to enhance the absorption in broader wavelength range. Substantial electric field concentrates in the grooves of surface photonic crystal and in the Si film. Our structure is versatile for solar cells, broadband photodetection and stealth coating.

show abstract

Time-resolved photocurrents in quantum well/dot infrared photodetectors with different optical coupling structures

Cited by 18 publications

References 16 publications

Enhanced normal-direction excitation and emission of dual-emitting quantum dots on a cascaded photonic crystal surface

Enhanced normal-direction excitation and emission of dual-emitting quantum dots on a cascaded photonic crystal surface

Экситонные эффекты и примесно-дефектное излучение в GaAs/AlGaAs-структурах, применяемых для изготовления детекторов среднего ИК-диапазона

Enhanced Broadband Electromagnetic Absorption in Silicon Film with Photonic Crystal Surface and Random Gold Grooves Reflector

Contact Info

Product

Resources

About