Time-resolved observation of electron-phonon relaxation in copper

Elsayed-Ali, Hani E.; Norris, T. B.; Pessot, M.; Mourou, G.

doi:10.1103/physrevlett.58.1212

Cited by 604 publications

(293 citation statements)

References 6 publications

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“…We have chosen to report the composite value because the influence of metal alloy composition on the electron-phonon coupling coefficient is unknown in Au x Cu 1-x and Au x Pd 1-x thin films. Based on the work by Majumdar and Reddy [41] and the bulk properties of Au [45,46], Cu [47,48], and Pd [49] (the electron-phonon coupling coefficient was determined based on the equation in Table 1 in Ref. [50], where the electronic heat capacity parameter, Debye temperature, and McMillan factor were found in Refs.…”

Section: Resultsmentioning

confidence: 99%

Thermal interface conductance across metal alloy–dielectric interfaces

Freedman

Davis

et al. 2016

Phys. Rev. B

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Section: Resultsmentioning

confidence: 99%

Thermal interface conductance across metal alloy–dielectric interfaces

Freedman

Davis

et al. 2016

Phys. Rev. B

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“…Experimental values of g p were tabulated by Qiu and Tien [82], derived from short pulse laser heating experiments (see [90,91] for examples, [92] for a review) in which excess energy is injected into the electronic system by a laser pulse of ∼ 100 fs duration and the system monitored as it relaxes to equilibrium. These values show much better agreement with calculations using (56) than with those using (52), despite the presence of more band structure dependent effects in the latter formula.…”

Section: Estimates Of Electron-phonon Couplingmentioning

confidence: 99%

The treatment of electronic excitations in atomistic models of radiation damage in metals

Race¹,

Mason²,

Finnis³

et al. 2010

Rep. Prog. Phys.

135

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Abstract. Atomistic simulations are a primary means of understanding the damage done to metallic materials by high energy particulate radiation. In many situations the electrons in a target material are known to exert a strong influence on the rate and type of damage. The dynamic exchange of energy between electrons and ions can act to damp the ionic motion, to inhibit the production of defects or to quench in damage, depending on the situation. Finding ways to incorporate these electronic effects into atomistic simulations of radiation damage is a topic of current major interest, driven by materials science challenges in diverse areas such as energy production and device manufacture.In this review, we discuss the range of approaches that have been used to tackle these challenges. We compare augmented classical models of various kinds and consider recent work applying semi-classical techniques to allow the explicit incorporation of quantum mechanical electrons within atomistic simulations of radiation damage. We also outline the body of theoretical work on stopping power and electron-phonon coupling used to inform efforts to incorporate electronic effects in atomistic simulations and to evaluate their performance.

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“…The kinetics of the excitation and relaxation of the target can be divided into a set of processes separated temporally. Due to the mass difference between electrons and ions, excitation of the electronic subsystem by a laser pulse and the subsequent creation of second-generation free electrons occur much faster (some femtoseconds, ∼10 −15 s, or the duration of a pulse) [14,21] than other processes, such as energy exchange with the lattice and the cooling of excited electrons, which both take up to ∼10 −11 s [22]- [27]. The processes in the electronic subsystem play a fundamental role because they provide the initial conditions for subsequent energy 3 dissipation.…”

Section: Introductionmentioning

confidence: 99%

Transient dynamics of the electronic subsystem of semiconductors irradiated with an ultrashort vacuum ultraviolet laser pulse

Medvedev¹,

Rethfeld²

2010

New J. Phys.

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Abstract. The irradiation of semiconductors with ultrashort laser pulses causes excitation of electrons from bound states (the valence band and deep atomic shells) to the conduction band, which produces non-equilibrium highly energetic free electrons. We apply a Monte-Carlo simulation technique to study the ionization and excitation of the electronic subsystem of a solid silicon target irradiated with a femtosecond laser pulse, obtaining the transient distribution of electrons within the conduction band. We take into account the electronic band structure and Pauli's principle for excited electrons. Secondary excitation and ionization processes induced by electrons in the conduction band and holes in the valence band were also included and simulated event by event. The temporal distributions of the density and the energy of excited electrons are calculated and discussed. We demonstrate that, due to the energy used to overcome the ionization potential, the final kinetic energy of the free electrons is significantly less than the total energy provided by the laser pulse. We extend the concept of an 'effective energy gap' for multiple electronic excitations, which can be applied to estimate the free-electron density after high-intensity vacuum ultraviolet (VUV) laser pulse irradiation. The effective energy gap depends on both the properties of the material and the laser pulse parameters. The concept provides a fundamental understanding of the experimentally accessible pair creation energy measured in the limit of long times.

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Time-resolved observation of electron-phonon relaxation in copper

Cited by 604 publications

References 6 publications

Thermal interface conductance across metal alloy–dielectric interfaces

Thermal interface conductance across metal alloy–dielectric interfaces

The treatment of electronic excitations in atomistic models of radiation damage in metals

Transient dynamics of the electronic subsystem of semiconductors irradiated with an ultrashort vacuum ultraviolet laser pulse

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