Time-resolved electron kinetics in swift heavy ion irradiated solids

Medvedev, Nikita; Rymzhanov, R.A.; Волков, А. Е.

doi:10.1088/0022-3727/48/35/355303

Cited by 73 publications

(126 citation statements)

References 87 publications

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“…The electrons produced directly by an SHI impact are commonly referred to as delta electrons (formerly delta rays [80]). The energy distribution of the excited electrons follows approximately a ~1/E 2 law typical for Rutherford scattering, except for the low-energy region where other effects cause some deviations [69]. The angular distribution of the delta electrons is approximately proportional to cos 2 (θ), which implies that the minority of the electrons travel along the ion trajectory while the majority move perpendicular to it.…”

Section: Electronic Energy Loss and Energy Dissipationmentioning

confidence: 85%

“…Elastic scattering channels of delta electronsscattering on target atoms without excitation of electronsprovide target atoms with kinetic energy. The cross sections of such processes can be extracted from experimental data on optical phonon CDF [69,268]. If such data is not available, the elastic scattering cross section can be calculated from the lattice DSF through classical molecular dynamics simulations [269].…”

Section: Modeling Of Electronic Processesmentioning

confidence: 99%

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Fundamental Phenomena and Applications of Swift Heavy Ion Irradiations

Lang

Djurabekova

Medvedev

et al. 2020

Comprehensive Nuclear Materials

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This review concentrates on the specific properties and characteristics of damage structures generated with high-energy ions in the electronic energy loss regime. Irradiation experiments with so-called swift heavy ions (SHI) find applications in many different fields, with examples presented in ion-track nanotechnology, radiation hardness analysis of functional materials, and laboratory tests of cosmic radiation. The basics of the SHI-solid interaction are described with special attention to processes in the electronic subsystem. The broad spectrum of damage phenomena is exemplified for various materials and material classes, along with a description of typical characterization techniques. The review also presents state-of-the-art modeling efforts that try to account for the complexity of the coupled processes of the electronic and atomic subsystems. Finally, the relevance of SHI phenomena for effects induced by fission fragments in nuclear fuels and how this knowledge can be applied to better estimate damage risks in nuclear materials is discussed.

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Section: Electronic Energy Loss and Energy Dissipationmentioning

confidence: 85%

Section: Modeling Of Electronic Processesmentioning

confidence: 99%

Fundamental Phenomena and Applications of Swift Heavy Ion Irradiations

Lang

Djurabekova

Medvedev

et al. 2020

Comprehensive Nuclear Materials

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“…To simulate the formation of Bi ion latent tracks a hybrid scheme was applied [7,8] for the coupled kinetics of the excitation and relaxation of the electronic and the atomic sub-systems of a material irradiated with highenergy heavy ions. First, the asymptotic trajectory Monte Carlo code TREKIS [9,10] is used to determine the initial parameters which are characteristic of an excited state of the ensemble of electrons as well as energy transferred to lattice atoms via electron-lattice coupling in an ion track. The calculated radial distribution of the energy transferred into the lattice is then used as input data for classical molecular dynamics code LAMMPS [11] used to simulate subsequent lattice relaxation and structure transformations appearing near the ion trajectory.…”

Section: Simulationmentioning

confidence: 99%

Latent tracks of swift Bi ions in Si₃N₄

Vuuren¹,

Ibrayeva

Rymzhanov

et al. 2020

Mater. Res. Express

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Parameters such as track diameter and microstruture of latent tracks in polycrystalline Si 3 N 4 induced by 710 MeV Bi ions were studied using TEM and XRD techniques, and MD simulation. Experimental results are considered in terms of the framework of a 'core-shell' inelastic thermal spike (i-TS) model. The average track radius determined by means of electron microscopy coincides with that deduced from computer modelling and is similar to the track core size predicted by the i-TS model using a boiling criterion. Indirect (XRD) techniques give a larger average latent track radius which is consistent with the integral nature of the signal collected from the probed volume of irradiated material.

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“…The appropriate cross sections for silicon, that will be used throughout this paper, were presented in Ref. [17] and its approximations were already analyzed in Ref. [18].…”

Section: Overview Of Xtant Codementioning

confidence: 99%

Influence of model parameters on a simulation of x-ray irradiated materials: example of XTANT code

Medvedev

Lipp

2017

SPIE Proceedings

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In this contribution an analysis of influence of model parameters on the results of simulations of material properties under free-electron laser irradiation is presented. It is based on the in-house hybrid code XTANT (X-ray-induced Thermal And Nonthermal Transition; N. Medvedev et. al, Phys. Rev. B 91 (2015) 054113), which combines tight binding molecular dynamics for atoms with Monte Carlo treatment of high-energy electrons and core-holes, and Boltzmann collision integrals for nonadiabatic (electron-phonon) coupling. Different parameterizations of transferable tight binding method for silicon are analyzed, namely basis sets sp 3 and sp 3 s*. The sp 3 parameterization seems to provide a better agreement of the silicon damage threshold with experimental data. Further, the influence of different schemes of molecular dynamics periodic boundaries simulation is compared: constant volume vs Parrinello-Rahman constant pressure. Constant-volume scheme gives a better agreement with experimental transient properties, as could be expected. Parameters entering the calculations of optical properties are analyzed, showing virtually no effect on the outcome beyond trivial broadening of the peaks of the optical coefficients.

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Time-resolved electron kinetics in swift heavy ion irradiated solids

Cited by 73 publications

References 87 publications

Fundamental Phenomena and Applications of Swift Heavy Ion Irradiations

Fundamental Phenomena and Applications of Swift Heavy Ion Irradiations

Latent tracks of swift Bi ions in Si₃N₄

Influence of model parameters on a simulation of x-ray irradiated materials: example of XTANT code

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Time-resolved electron kinetics in swift heavy ion irradiated solids

Cited by 73 publications

References 87 publications

Fundamental Phenomena and Applications of Swift Heavy Ion Irradiations

Fundamental Phenomena and Applications of Swift Heavy Ion Irradiations

Latent tracks of swift Bi ions in Si3N4

Influence of model parameters on a simulation of x-ray irradiated materials: example of XTANT code

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Product

Resources

About

Latent tracks of swift Bi ions in Si₃N₄