Due to the Ni nanotubes' shape anisotropy, low specific density, large specific surface, and uniform magnetic field, they have been offered as carriers for targeted delivery of drug or protein and the process of their formation from synthesis stage to the stage of surface modification and protein attaching has been demonstrated. Some steps to hasten their biomedical application have been applied. First, to have full control over the carrier dimensions and structure parameters, electrodeposition method in pores of polyethylene terephthalate template has been applied. Second, to understand the scope of Ni nanostructures application, their degradation in media with different acidity has been studied. Third, to improve the biocompatibility and to make payloads attachment possible, nanotubes surface modification with organosilicon compound has been carried out. At last, the scheme of protein attaching to the nanostructure surface has been developed and the binding process was demonstrated as an example of the bovine serum albumin.
A depth-resolved Raman spectroscopy technique was used to study the residual stress profiles in polycrystalline silicon nitride that was irradiated with Xe (167 MeV, 1 × 1011 cm−2 ÷ 4.87 × 1013 cm−2) and Bi (710 MeV, 1 × 1011 cm−2 ÷ 1 × 1013 cm−2) ions. It was shown that both the compressive and tensile stress fields were formed in the irradiated specimen, separated by a buffer zone that was located at a depth that coincided with the thickness of layer, amorphized due to multiple overlapping track regions. The compressive stresses were registered in a subsurface region, while at a greater depth, the tensile stresses were recorded and their levels reached the maximum value at the end of ion range. The size of the amorphous layer was evaluated from the dose dependence of the full width at half maximum (FWHM) (FWHM of the dominant 204 cm−1 line in the Raman spectra and scanning electron microscopy.
Transmission electron microscopy techniques were used to investigate the effect of swift xenon ions on the microstructure of polycrystalline Al doped β-Si3N4. The target material was irradiated with Xe with energies between 167 and 220 MeV with initial stopping powers of 20 and 22 keV/nm, respectively. The fluences ranged between 3 × 10 11 to 6 × 10 14 cm −2 and irradiation was done at room temperature. The formation of discontinuous latent ion tracks was observed in all samples. The threshold stopping power for track formation in Al doped β-Si3N4 was determined to be approximately 8.9 keV/nm and the threshold fluence for amorphisation due to electronic stopping in the range between 1 × 10 13 and 2 × 10 14 cm −2 at a threshold stopping power of between 6.8 and 8.1 keV/nm. It was also found that the doping of β-Si3N4 with Al lowers the threshold for amorphisation as compared to pure β-Si3N4.
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