Time-of-flight – Energy spectrometer for elemental depth profiling – Jyväskylä design

Laitinen, Mikko; Rossi, Mikko; Julin, Jaakko; Sajavaara, Timo

doi:10.1016/j.nimb.2014.07.001

Cited by 75 publications

(65 citation statements)

References 35 publications

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“…On films deposited on Si substrate, the contact angle is approximately constant at ca. 25 after the illumination, independently of the film thickness. On PMMA, the contact angle decreases with increasing film coverage, from the 71 of the native PMMA to 25 , as shown in Fig.…”

Section: Wettingmentioning

confidence: 98%

Nucleation and growth of ZnO on PMMA by low-temperature atomic layer deposition

Napari

Malm

Lehto

et al. 2014

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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ZnO deposition on metal substrates: Relating fabrication, morphology, and wettability J. Appl. Phys. 113, 184905 (2013) ZnO films were grown by atomic layer deposition at 35 C on poly(methyl methacrylate) substrates using diethylzinc and water precursors. The film growth, morphology, and crystallinity were studied using Rutherford backscattering spectrometry, time-of-flight elastic recoil detection analysis, atomic force microscopy, scanning electron microscopy, and x-ray diffraction. The uniform film growth was reached after several hundreds of deposition cycles, preceded by the precursor penetration into the porous bulk and island-type growth. After the full surface coverage, the ZnO films were stoichiometric, and consisted of large grains (diameter 30 nm) with a film surface roughness up to 6 nm (RMS). The introduction of Al 2 O 3 seed layer enhanced the initial ZnO growth substantially and changed the surface morphology as well as the crystallinity of the deposited ZnO films. Furthermore, the water contact angles of the ZnO films were measured, and upon ultraviolet illumination, the ZnO films on all the substrates became hydrophilic, independent of the film crystallinity.

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Section: Wettingmentioning

confidence: 98%

Nucleation and growth of ZnO on PMMA by low-temperature atomic layer deposition

Napari

Malm

Lehto

et al. 2014

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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“…The film composition and impurities were analysed with time-of flight elastic recoil detection analysis (TOF-ERDA) 56 and Rutherford backscattering spectrometry (RBS) using 2 MeV He beam.…”

Section: B Characterizationmentioning

confidence: 99%

Aluminum oxide/titanium dioxide nanolaminates grown by atomic layer deposition: Growth and mechanical properties

Ylivaara¹,

Kilpi²,

Liu

et al. 2016

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Atomic layer deposition (ALD) is based on self-limiting surface reactions. This and cyclic process enable the growth of conformal thin films with precise thickness control and sharp interfaces. A multilayered thin film, which is nanolaminate, can be grown using ALD with tuneable electrical and optical properties to be exploited, for example, in the microelectromechanical systems. In this work, the tunability of the residual stress, adhesion, and mechanical properties of the ALD nanolaminates composed of aluminum oxide (Al2O3) and titanium dioxide (TiO2) films on silicon were explored as a function of growth temperature (110–300 °C), film thickness (20–300 nm), bilayer thickness (0.1–100 nm), and TiO2 content (0%–100%). Al2O3 was grown from Me3Al and H2O, and TiO2 from TiCl4 and H2O. According to wafer curvature measurements, Al2O3/TiO2 nanolaminates were under tensile stress; bilayer thickness and growth temperature were the major parameters affecting the stress; the residual stress decreased with increasing bilayer thickness and ALD temperature. Hardness increased with increasing ALD temperature and decreased with increasing TiO2 fraction. Contact modulus remained approximately stable. The adhesion of the nanolaminate film was good on silicon.

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“…[22] In this method, a heavy 12.8 MeV 63Cu 7+ ion beam is directed to the sample and the time of flight (velocity) and energy of recoiled sample atoms are measured with a detector telescope at 41° to the beam direction. Independent measurement of the velocity and energy of recoil atoms allows them to be differentiated according to their mass.…”

Section: Methodsmentioning

confidence: 99%

Low-temperature atomic layer deposition of SiO ₂ /Al ₂ O ₃ multilayer structures constructed on self-standing films of cellulose nanofibrils

Putkonen

Sippola

Svärd

et al. 2017

Phil. Trans. R. Soc. A.

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In this paper, we have optimized a low-temperature atomic layer deposition (ALD) of SiO 2 using AP-LTO® 330 and ozone (O 3 ) as precursors, and demonstrated its suitability to surface-modify temperature-sensitive bio-based films of cellulose nanofibrils (CNFs). The lowest temperature for the thermal ALD process was 80°C when the silicon precursor residence time was increased by the stop-flow mode. The SiO 2 film deposition rate was dependent on the temperature varying within 1.5–2.2 Å cycle −1 in the temperature range of 80–350°C, respectively. The low-temperature SiO 2 process that resulted was combined with the conventional trimethyl aluminium + H 2 O process in order to prepare thin multilayer nanolaminates on self-standing CNF films. One to six stacks of SiO 2 /Al 2 O 3 were deposited on the CNF films, with individual layer thicknesses of 3.7 nm and 2.6 nm, respectively, combined with a 5 nm protective SiO 2 layer as the top layer. The performance of the multilayer hybrid nanolaminate structures was evaluated with respect to the oxygen and water vapour transmission rates. Six stacks of SiO 2 /Al 2 O with a total thickness of approximately 35 nm efficiently prevented oxygen and water molecules from interacting with the CNF film. The oxygen transmission rates analysed at 80% RH decreased from the value for plain CNF film of 130 ml m −2 d −1 to 0.15 ml m −2 d −1 , whereas the water transmission rates lowered from 630 ± 50 g m −2 d −1 down to 90 ± 40 g m −2 d −1 . This article is part of a discussion meeting issue ‘New horizons for cellulose nanotechnology’.

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Time-of-flight – Energy spectrometer for elemental depth profiling – Jyväskylä design

Abstract: T. (2014). Time-of-flight -Energy spectrometer for elemental depth profiling -Jyväskylä design. Nuclear instruments and methods in physics research section B: beam interactions with materials and atoms, 337, 55-61.

Cited by 75 publications

References 35 publications

Nucleation and growth of ZnO on PMMA by low-temperature atomic layer deposition

Nucleation and growth of ZnO on PMMA by low-temperature atomic layer deposition

Aluminum oxide/titanium dioxide nanolaminates grown by atomic layer deposition: Growth and mechanical properties

Low-temperature atomic layer deposition of SiO ₂ /Al ₂ O ₃ multilayer structures constructed on self-standing films of cellulose nanofibrils

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Time-of-flight – Energy spectrometer for elemental depth profiling – Jyväskylä design

Abstract: T. (2014). Time-of-flight -Energy spectrometer for elemental depth profiling -Jyväskylä design. Nuclear instruments and methods in physics research section B: beam interactions with materials and atoms, 337, 55-61.

Cited by 75 publications

References 35 publications

Nucleation and growth of ZnO on PMMA by low-temperature atomic layer deposition

Nucleation and growth of ZnO on PMMA by low-temperature atomic layer deposition

Aluminum oxide/titanium dioxide nanolaminates grown by atomic layer deposition: Growth and mechanical properties

Low-temperature atomic layer deposition of SiO 2 /Al 2 O 3 multilayer structures constructed on self-standing films of cellulose nanofibrils

Contact Info

Product

Resources

About

Low-temperature atomic layer deposition of SiO ₂ /Al ₂ O ₃ multilayer structures constructed on self-standing films of cellulose nanofibrils