Time evolution of the depth profile of {113} defects during transient enhanced diffusion in silicon

Colombeau, B.; Cowern, N.E.B.; Cristiano, Fuccio; Calvo, P.; Cherkashin, Nikolay; Lamrani, Y.; Claverie, A.

doi:10.1063/1.1608489

Cited by 27 publications

(14 citation statements)

References 6 publications

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“…[28][29][30] The results of this study suggest that, since almost all of the isolated interstitials are C, these carbon atoms can become mobile and migrate, e.g., to a nearby surface. If the surface acts as a perfect sink ͑a commonly held proposition well established 31 at least in Si͒, irradiation could result in C atom segregation at the surface. We note that experiments on thin foils observing C enrichment on the back surface beyond the ion range ͑to avoid confusion with well understood preferential sputtering at the front surface 12 ͒ could confirm this proposition.…”

Section: Isolated Defects Defects In Clustersmentioning

confidence: 98%

Major elemental asymmetry and recombination effects in irradiated WC

2006

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We study the initial state of irradiation damage in WC, an alloy with a large mass difference between the constituents, using molecular dynamics computer simulations. We find that a vast majority of the resulting isolated defects are carbon. Moreover, an in-cascade defect recombination effect similar to that in metals is observed. Both effects are shown to be related to the high formation energy of W defects.

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Section: Isolated Defects Defects In Clustersmentioning

confidence: 98%

Major elemental asymmetry and recombination effects in irradiated WC

2006

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“…Transmission electron microscopy analysis after annealing ͑not shown͒ indicates that a layer of ͕113͖ defects is formed between 0.15 and 0.45 m. 17 The second boron marker layer is therefore entirely located within the defect region. For the calculation of the supersaturation S def at 850°C with the CEMES model, the defect depth z def has been set at 300 nm.…”

Section: Application 1: Ted In a Structure Containing B Delta-layersmentioning

confidence: 99%

Prediction of boron transient enhanced diffusion through the atom-by-atom modeling of extended defects

Lampin

Cristiano

Lamrani

et al. 2003

Journal of Applied Physics

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The modeling of the atom-by-atom growth of extended defects is coupled to the diffusion equations of boron by transferring the free interstitial supersaturation calculated with a defect model into a process simulator. Two methods to achieve this coupling (equilibrium method and fully coupled method, respectively) are presented and tested against a variety of experimental conditions. They are first applied to a transient enhanced diffusion experiment carried out on a structure containing several B delta-doped layers, in which the amount of diffusion of the different layers is accurately predicted. The fully coupled method is then used to simulate the diffusion of ultrashallow B-implanted profiles. This work definitely demonstrates the relevance of accurate physical defect models for the successful design of ultrashallow junctions in future generations of integrated circuits.

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“…Upon further annealing, the density of ͕311͖ defects decreased rapidly and the loop density increased. 14,15 We suppose that in our case these defects glide to the Si/ SiGe interface initiating the formation of misfit dislocations, similar to the relaxation model discussed for the case of H + or He + implantation 11 and are, therefore, not visible in XTEM images in Figs. 2 and 4.…”

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confidence: 99%

Strain relaxation of pseudomorphic Si1−xGex∕Si(100) heterostructures after Si+ ion implantation

Holländer

Buca

Mörschbächer

et al. 2004

Journal of Applied Physics

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The strain relaxation of pseudomorphic Si 1−x Ge x layers ͑x = 0.21, . . . , 0.33͒ was investigated after low-dose Si + ion implantation and annealing. The layers were grown by molecular-beam epitaxy or chemical vapor deposition on Si͑100͒ or silicon-on-insulator. Strain relaxation of up to 75% of the initial strain was observed at temperatures as low as 850°C after implantation of Si ions with doses below 2 ϫ 10 14 cm −2 . We suggest that the Si implantation generates primarily dislocation loops in the SiGe layer and in the underlying Si which convert to strain relaxing misfit segments. Strained Si films grown on strain-relaxed SiGe buffer layers will soon be applied for advanced microelectronic devices since strained Si exhibits significantly enhanced carrier mobilities and therefore, yields to transistors with higher transconductance and drive currents.1,2 However, a key problem is the fabrication of thin strain relaxed SiGe buffer layers, which serve as virtual substrates for the growth of strained silicon. The standard approach is the growth of several micrometer thick, compositionally graded buffer layers. 3Recently, it was shown that He + ion implantation and subsequent thermal annealing can successfully be employed to relax the strain of thin pseudomorphic SiGe layer grown on Si͑100͒.4-6 The required He + implantation doses to achieve substantial strain relaxation during the subsequent annealing are in the range of 5 ϫ 10 15 cm −2 to 2 ϫ 10 16 cm −2 . These relatively high doses lead to long implantation times and limit throughput of wafers in production and form voids in the underlying silicon. Previously it was shown that strain relaxation can also be achieved by H + implantation and annealing.4 However, this method was only successful forSiGe layers with Ge concentrations below 25 at. %. Enhanced strain relaxation due to the introduction of point defects by Ge + ion implantation at 400°C or the implantation of dopants ͑B,As͒ was reported, however, without revealing the resulting microstructure. 7,8 The use of ion implantation for strain relaxation has several advantages: It is easy to use, is highly reproducible, is area-selective by the use of masks, and is fully compatible with existing Si technology. Therefore, there is interest in the development of an ion implantation method, which allows efficient strain relaxation after annealing at moderate temperatures while maintaining a high sample quality. It is important to use ions, which require only a low dose and avoid contamination or unintended doping by the implanted ions.In this work, we have investigated the strain relaxation of pseudomorphic Si 1−x Ge x layers induced by low dose Si + ion implantation at room temperature and subsequent annealing. We also provide a preliminary explanation for the mechanism of strain relaxation. The layers were grown by chemical vapor deposition (CVD) and solid-source molecular-beam-epitaxy (MBE) on Si͑100͒ and on siliconon-insulator (SOI) wafers. The samples were characterized using transmission electron microsco...

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Time evolution of the depth profile of {113} defects during transient enhanced diffusion in silicon

Cited by 27 publications

References 6 publications

Major elemental asymmetry and recombination effects in irradiated WC

Major elemental asymmetry and recombination effects in irradiated WC

Prediction of boron transient enhanced diffusion through the atom-by-atom modeling of extended defects

Strain relaxation of pseudomorphic Si1−xGex∕Si(100) heterostructures after Si+ ion implantation

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