Prediction of boron transient enhanced diffusion through the atom-by-atom modeling of extended defects

Lampin, E.; Cristiano, Fuccio; Lamrani, Y.; Claverie, A.; Colombeau, B.; Cowern, N.E.B.

doi:10.1063/1.1627461

Cited by 16 publications

(7 citation statements)

References 15 publications

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“…14 Because of the technological relevance, a number of experi-mental works in the field have allowed the characterization of simple and extended defects resulting from implantation and annealing. [15][16][17][18][19][20] Theoretical models have been developed to describe the observed defect evolution [21][22][23] and its correlation with dopant diffusion and clustering. [24][25][26][27][28][29][30][31] As the lateral dimensions of the MOS transistor channel are scaled down, the source/drain extension junction depth must be proportionately reduced in order to avoid shortchannel effects.…”

Section: Introductionmentioning

confidence: 99%

Ion-beam-induced amorphization and recrystallization in silicon

Pelaz¹,

Marqués²,

Barbolla³

2004

Journal of Applied Physics

343

194

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Ion-beam-induced amorphization in Si has attracted significant interest since the beginning of the use of ion implantation for the fabrication of Si devices. A number of theoretical calculations and experiments were designed to provide a better understanding of the mechanisms behind the crystal-to-amorphous transition in Si. Nowadays, a renewed interest in the modeling of amorphization mechanisms at atomic level has arisen due to the use of preamorphizing implants and high dopant implantation doses for the fabrication of nanometric-scale Si devices. In this paper we will describe the most significant experimental observations related to the ion-beam-induced amorphization in Si and the models that have been developed to describe the process. Amorphous Si formation by ion implantation is the result of a critical balance between the damage generation and its annihilation. Implantation cascades generate different damage configurations going from isolated point defects and point defect clusters in essentially crystalline Si to amorphous pockets and continuous amorphous layers. The superlinear trend in the damage accumulation with dose and the existence of an ion mass depending critical temperature above which it is not possible to amorphize are some of the intriguing features of the ion-beam-induced amorphization in Si. Phenomenological models were developed in an attempt to explain the experimental observations, as well as other more recent atomistic models based on particular defects. Under traditional models, amorphization is envisaged to occur through the overlap of isolated damaged regions created by individual ions (heterogeneous amorphization) or via the buildup of simple defects (homogeneous amorphization). The development of atomistic amorphization models requires the identification of the lattice defects involved in the amorphization process and the characterization of their annealing behavior. Recently, the amorphization model based on the accumulation and interaction of bond defects or IV pairs has been shown to quantitatively reproduce the experimental observations. Current understanding of amorphous Si formation and its recrystallization, predictive capabilities of amorphization models, and residual damage after regrowth are analyzed.

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Section: Introductionmentioning

confidence: 99%

Ion-beam-induced amorphization and recrystallization in silicon

Pelaz¹,

Marqués²,

Barbolla³

2004

Journal of Applied Physics

343

194

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“…This directly shows that the concentration of Si self-interstitials supersaturated by {311} self-interstitial clusters is going down to the thermal equilibrium values toward the surface (10). Although such a gradient of Si self-interstitials toward the surface was reported by the measurement using B marker layers (11), the present work reports the direct observation of the enhanced Si self-diffusion using Si isotope SLs. We simulated the Si isotope profiles in Fig.…”

Section: Si Superlatticesmentioning

confidence: 55%

Probing the Behaviors of Point Defects in Silicon and Germanium Using Isotope Superlattices

et al. 2009

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In order to probe the fundamental behaviors of point defects in silicon and germanium, we studied the self-diffusion using isotope superlattices. In ion-implanted germanium, vacancies are in thermal equilibrium and transient enhanced diffusion is not present under the experimental conditions employed in this study. In contrast, silicon self-interstitials are supersaturated in ion-implanted silicon and the self-interstitial concentration is going down to the thermal equilibrium value toward the surface.

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“…The I 0 concentration has a value of C I ‫ء‬ ϳ 10 14 cm −3 at the initial stage ͑t =1 s͒ with a flat profile in the bulk, whereas the value is going down to the C I eq toward the surface, which enhances the Si selfdiffusion at the deeper region ͑Ͼ40 nm͒ where the excess I is produced by the 28 Si + self-implantation. Although such an I supersaturation gradient between the implanted region and the surface by the measurement using B marker layers was reported, 24,25 the present work reports the direct observation of the enhanced Si self-diffusion using Si isotope SLs. We also observed the I supersaturation gradient for annealing at 800°C ͑not shown in figures͒.…”

Section: A I 0 Contribution In the Intrinsic Conditionsmentioning

confidence: 57%

Behaviors of neutral and charged silicon self-interstitials during transient enhanced diffusion in silicon investigated by isotope superlattices

Shimizu

Uematsu

Itoh

et al. 2009

Journal of Applied Physics

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We investigated the contributions of neutral and charged silicon self-interstitials to self-and boron diffusion during transient enhanced diffusion in silicon. We simultaneously observed self-and boron diffusion in silicon using nat Si / 28 Si isotope superlattices. A calculation based on diffusion equations involving ͕311͖ defects and boron-interstitial cluster models was employed to reproduce the diffusion profiles in silicon-implanted ͑intrinsic͒ and boron-implanted ͑extrinsic͒ silicon isotope superlattices, followed by annealing. To investigate the diffusion processes, the time evolution of the silicon self-interstitial profiles during the transient diffusion was simulated. The results directly demonstrate that excess neutral self-interstitials dominantly enhance the self-diffusion during the transient process in the intrinsic conditions, while doubly positively charged self-interstitials dominate the self-diffusion in the extrinsic conditions.

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Prediction of boron transient enhanced diffusion through the atom-by-atom modeling of extended defects

Cited by 16 publications

References 15 publications

Ion-beam-induced amorphization and recrystallization in silicon

Ion-beam-induced amorphization and recrystallization in silicon

Probing the Behaviors of Point Defects in Silicon and Germanium Using Isotope Superlattices

Behaviors of neutral and charged silicon self-interstitials during transient enhanced diffusion in silicon investigated by isotope superlattices

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