2010
DOI: 10.1111/j.1551-2916.2009.03588.x
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Time‐Domain Response Simulation of ZnO Varistors by Voronoi Network with an Actual Grain Boundary Model

Abstract: A special simulation model for the time‐domain responses of ZnO varistors is proposed in this paper. This model is based on the Voronoi network and contains the actual conduction mechanism of the grain boundaries, as well as the capacitances of the grain boundaries. The AC responses of the actual varistor samples were simulated and compared with the experimental results. The simulated waveforms agree with the measured ones very well, which indicates that the simulation model is quite reasonable.

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Cited by 14 publications
(7 citation statements)
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References 15 publications
(31 reference statements)
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“…A simulation model of ZnO varistors based on Voronoi network containing the actual conduction mechanism of the grain boundaries is proposed in previous studies [21,22]. According to the simulation results as shown in Figure 4, the interface state densities have great influence on the electrical proprieties of ZnO varistors, including the leakage current, the nonlinear (c) the nonlinear coefficient ; (d) the residual voltage ratio K. coefficient and the residual voltage ratio.…”
Section: Resultsmentioning
confidence: 97%
“…A simulation model of ZnO varistors based on Voronoi network containing the actual conduction mechanism of the grain boundaries is proposed in previous studies [21,22]. According to the simulation results as shown in Figure 4, the interface state densities have great influence on the electrical proprieties of ZnO varistors, including the leakage current, the nonlinear (c) the nonlinear coefficient ; (d) the residual voltage ratio K. coefficient and the residual voltage ratio.…”
Section: Resultsmentioning
confidence: 97%
“…Zhao et al studied the effect of grain disorder on the electrical properties of MOV based on the Voronoi network with different disorder degrees; the result predicted that parameters such as the hold-off voltage, internal temperature, and average dissipated energy density would be higher with more uniform grains [11]. Long et al successfully simulated the a.c. response of MOV by considering the actual conduction mechanism of grain boundaries [12]. Meng et al established a grain boundary partition model considering the intergranular bypass effect, which more realistically simulated the grain boundaries conduction mechanism of MOV [13].…”
Section: Introductionmentioning
confidence: 99%
“…Long et al. successfully simulated the a.c. response of MOV by considering the actual conduction mechanism of grain boundaries [12]. Meng et al.…”
Section: Introductionmentioning
confidence: 99%
“…To more accurately describe the feature of the varistor microstructure, Bartkowiak et al [11] proposed a Voronoi network. By using this network as a model of the varistor microstructure, some simulation works on varistors were completed [12][13][14][15][16]. Topcagic et al [17] combined the Voronoi network and the finite element method (FEM) to simulate the current distribution of varistors and verified the accuracy of the simulation results.…”
Section: Introductionmentioning
confidence: 99%
“…[11] proposed a Voronoi network. By using this network as a model of the varistor microstructure, some simulation works on varistors were completed [12–16]. Topcagic et al.…”
Section: Introductionmentioning
confidence: 99%