Time-dependent threshold voltage drift induced by interface traps in normally-off GaN MOSFET with different gate recess technique

Sang, Fei; Wang, Maojun; Tao, Ming; Liu, Shaofei; Yu, Min; Xie, Bing; Wen, Cheng P.; Wang, Jingyan; Wu, Wengang; Hao, Yue; Shen, Bo

doi:10.7567/apex.9.091001

Cited by 9 publications

(7 citation statements)

References 22 publications

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“…In addition to the radiation, the harsh space environment also includes extreme temperature. During the past few decades, the characteristics of devices at high temperature [3] and the reliability [4]- [7] on inverse piezoelectric effect, hot carriers, and electrochemical reaction have been widely investigated. However, the…”

Section: Introductionmentioning

confidence: 99%

Investigation of Inverse Piezoelectric Effect and Trap Effect in AlGaN/GaN HEMTs Under Reverse-Bias Step Stress at Cryogenic Temperature

Zhu

Hou

et al. 2020

IEEE Access

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The inverse piezoelectric effect and trap effect in GaN HEMTs under the high electric field by reverse-bias step stress at cryogenic temperature (CT, 77K) have been investigated. It is found that the inverse piezoelectric effect is suppressed while the trap effect is enhanced at CT. Due to the lower tensile stress in the as-grown AlGaN barrier at CT, the amplitude of the critical voltage related to inverse piezoelectric effect increases from 75V at 300K to 100V at CT, mitigating the irreversible degradation of the devices. The inverse piezoelectric effect dominates the degradation of reverse gate leakage, which is weakened at CT. However, the devices suffer from more degradation of I d (decreases by 94.38%) and G m,max (decreases by 95.15%) at CT in the dark, induced by the serious trap effect due to the longer emission time. UV-light-assisted stress measurements have been utilized to identify the contribution of the two mechanisms to the degradation of device characteristics at CT. The degradation of I d (G m,max) is only 0.82% (3.31%) for the piezoelectric effect and 93.56% (91.84%) for trap effect at CT, respectively. INDEX TERMS AlGaN/GaN, cryogenic temperature, reverse-bias stress, high electric field, inverse piezoelectric effect, trap, degradation.

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Section: Introductionmentioning

confidence: 99%

Investigation of Inverse Piezoelectric Effect and Trap Effect in AlGaN/GaN HEMTs Under Reverse-Bias Step Stress at Cryogenic Temperature

Zhu

Hou

et al. 2020

IEEE Access

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“…The AFM measurements demonstrate that conformal coverage is obtained in both cases, with a slight improvement in smoothness observed for the sample with the pre-treatment. It is known from previous reports that the dry etching methods used for recess etching method strongly affects the surface morphology of the etched regions, resulting in nitrogen vacancies and thereby more surface oxidation occurs [24,25]. Ref.…”

Section: Measurement Results and Discussionmentioning

confidence: 99%

Normally-off AlGaN/GaN MIS-HEMT with low gate leakage current using a hydrofluoric acid pre-treatment

Kurt

Gulseren

Ghobadi

et al. 2019

Solid-State Electronics

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We demonstrate the electrical performances of an AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor (MIS-HEMT) with low gate leakage current (I g ). A low gate leakage current as low as the order of 10 −11 A/mm was achieved from normally-off MIS-HEMT device (V th = 2.16 V) with a partially recessed gate, fluorine treatment, and ALD Al 2 O 3 gate dielectric layer. The gate leakage current decrease is attributed to the pre-treatment of the gate region with hydrofluoric acid (HF) and deionized water (DI) solution, which acts to remove the native oxide layer and thus decrease interface traps. X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM) analyses demonstrate that the AlGaN surfaces are modified such that the surface roughness and native oxide introduced by the treatments used to achieve normally-off operation are remedied with the use of the pre-treatment.

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“…Several kinds of dielectrics had been employed as the gate insulator materials in GaN MISHEMT, including Al2O3 [4][5][6][7][8][9][10], HfO2 [11,12], HfSiO [13], ZrO2 [14][15][16][17][18][19][20], Ga2O3 [21], SiO2 [22,23], and SiNx [24][25][26][27][28][29][30][31][32][33][34].…”

Section: Introductionmentioning

confidence: 99%

Dynamic Characteristics of GaN MISHEMT With 5-nm In-Situ SiN_x Dielectric Layer

Zhang

et al. 2022

IEEE J. Electron Devices Soc.

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A comprehensive study on dynamic characteristics of GaN MISHEMT with a 5nm-thick in-situ SiNx dielectric is presented. Effects of both negative and positive gate bias on threshold voltage instability were investigated and miniature threshold voltage shift was acquired. The slight shift was considered to be associated with the traps at the insulator/AlGaN interface and in the dielectric layer itself. Pulsed I-V measurements with various gate quiescent biases presented small current collapse (11%) and low enhancement of dynamic Ron for zero quiescent drain bias. When drain quiescent bias was strengthened to 20V, an increased dynamic Ron/static Ron ratio was identified but still limited to a low value of 1.24. The conduction reduction was in a good agreement with measurement results from drain current transient spectroscopy and possibly originates from trap states existed in the access region. Additional current collapse was observed in hard switching-on operation, resulted from energetic hot electrons accelerated by drain-source electrical field during the off-to-on step. The measurement results showed stabilized threshold voltage, a low dynamic Ron/static Ron ratio, and suppressed current collapse via employing a 5-nm thin in-situ SiNx layer in GaN MISHEMT, enabling it a promising solution for high-efficiency power switching applications.

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Time-dependent threshold voltage drift induced by interface traps in normally-off GaN MOSFET with different gate recess technique

Cited by 9 publications

References 22 publications

Investigation of Inverse Piezoelectric Effect and Trap Effect in AlGaN/GaN HEMTs Under Reverse-Bias Step Stress at Cryogenic Temperature

Investigation of Inverse Piezoelectric Effect and Trap Effect in AlGaN/GaN HEMTs Under Reverse-Bias Step Stress at Cryogenic Temperature

Normally-off AlGaN/GaN MIS-HEMT with low gate leakage current using a hydrofluoric acid pre-treatment

Dynamic Characteristics of GaN MISHEMT With 5-nm In-Situ SiN_x Dielectric Layer

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Time-dependent threshold voltage drift induced by interface traps in normally-off GaN MOSFET with different gate recess technique

Cited by 9 publications

References 22 publications

Investigation of Inverse Piezoelectric Effect and Trap Effect in AlGaN/GaN HEMTs Under Reverse-Bias Step Stress at Cryogenic Temperature

Investigation of Inverse Piezoelectric Effect and Trap Effect in AlGaN/GaN HEMTs Under Reverse-Bias Step Stress at Cryogenic Temperature

Normally-off AlGaN/GaN MIS-HEMT with low gate leakage current using a hydrofluoric acid pre-treatment

Dynamic Characteristics of GaN MISHEMT With 5-nm In-Situ SiNx Dielectric Layer

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Product

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Dynamic Characteristics of GaN MISHEMT With 5-nm In-Situ SiN_x Dielectric Layer