Fabrication and experimental characterization of a broadband quarter-wave plate, which is based on two-dimensional and binary silicon high-contrast gratings, are reported. The quarter-wave plate feature is achieved by the utilization of a regime, in which the proposed grating structure exhibits nearly total and approximately equal transmission of transverse electric and transverse magnetic waves with a phase difference of approximately π/2. The numerical and experimental results suggest a percent bandwidth of 42% and 33%, respectively, if the operation regime is defined as the range for which the conversion efficiency is higher than 0.9. A compact circular polarizer can be implemented by combining the grating with a linear polarizer.
A hybrid approach for obtaining normally off high electron mobility transistors (HEMTs) combining fluorine treatment, recess etch techniques, and AlGaN buffer was studied. The effects of process variations (recess etch depth and fluorine treatment duration) and epitaxial differences (AlGaN and carbon doped GaN buffers) on the DC characteristics of the normally off HEMTs were investigated. Two different epitaxial structures and three different process variations were compared. Epitaxial structures prepared with an AlGaN buffer showed a higher threshold voltage (V th = +3.59 V) than those prepared with a GaN buffer (V th = +1.85 V).
In this paper, we report an angstrom-thick atomic layer deposited (ALD) aluminum oxide (Al 2 O 3) dielectric passivation layer for an AlGaN/GaN high electron mobility transistor (HEMT). Our results show a 55% improvement in the gate lag performance of the design and a decrease by half in interface state density upon coating with two cycles of ALD Al 2 O 3. DC characteristics such as current density, threshold voltage, and leakage currents were maintained. ALD Al 2 O 3 passivation layers with thicknesses up to 10 nm were investigated. XPS analyses reveal that the first ALD cycles are sufficient to passivate GaN surface traps. This study demonstrates that efficient passivation can be achieved in atomic-scale with dimensions much thinner than commonly used bulk layers.
We demonstrate the electrical performances of an AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor (MIS-HEMT) with low gate leakage current (I g ). A low gate leakage current as low as the order of 10 −11 A/mm was achieved from normally-off MIS-HEMT device (V th = 2.16 V) with a partially recessed gate, fluorine treatment, and ALD Al 2 O 3 gate dielectric layer. The gate leakage current decrease is attributed to the pre-treatment of the gate region with hydrofluoric acid (HF) and deionized water (DI) solution, which acts to remove the native oxide layer and thus decrease interface traps. X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM) analyses demonstrate that the AlGaN surfaces are modified such that the surface roughness and native oxide introduced by the treatments used to achieve normally-off operation are remedied with the use of the pre-treatment.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.