Time-dependent information depth in optical probing of semiconductor materials and devices

Abstract

The interaction is considered of a time varying focused light beam with a semi‐infinite semiconductor. The volume which the photogenerated carriers probe as a function of time after the light beam is switched on is considered by introducing an information depth within which the majority of the carriers are generated. The effects are discussed of surface recombination velocity and absorption on the information depth and applications considered to both, optical beam induced current and photoluminescence studies.