Time-Dependent Hot Carrier Degradation in Polysilicon Emitter Bipolar Transistors Under High Current and Radiation Combined Stress

New Insights Into Noise Characteristics of Hot Carrier Induced Defects in Polysilicon Emitter Bipolar Junction Transistors and SiGe HBTs

“…The l/f noise was measured using the E4727A Advanced Low-Frequency Noise Analyzer together with B1500A from Keysight. 2(c) indicate that the 1/f noise spectra remain nearly unchanged, which haves been previously reported [8]. Fig.…”

“…Fig.2(a) and (b) illustrate the Auger HCs induced DC characteristic variations in Gummel-Poon (G-P) and current gain degradation curves in PE-BJTs. SIB curves shown in Fig.2(c) indicate that the 1/f noise spectra remain nearly unchanged, which haves been previously reported[8]. Fig.2(d), (e) and (f) exhibit the corresponding G-P curves, current gain curves and noise spectra of the PE-BJTs before and after MM stress.…”

“…Therefore, the model of bond dissociation by the high energy carrier paradigm must be extended for reason that it fails to interpret the HCD effects In contrast to the complicated cases of HCD in MOSFETs, HCD effects related reliability issues in BJTs are much more simplified. There are three major available hot carrier sources in PE-BJTs: reverse emitter-base (E/B) bias induced HCs [2], Auger electron produced HCs under high current stress [8] and the HCs come from mixed-mode (MM) stress [3]. HCDs under reverse E/B biased conditions have been traditionally studied since 1980s [2,[9][10], where HCs are created by large electric fields across the E/B junction.…”

“…First, the reduction of the minority carrier injection into the polysilicon emitter and base. Second, the carrier mobility degradation due to hot carrier released atomic hydrogens passivation of dangling bonds along the grain boundaries in polysilicon emitter[8,13]. In addition, current gain enhancement, and more importantly, is to the best of our knowledge the first time to be reported under MM stress condition.…”