Tilting of lattice planes in InP epilayers grown on miscut GaAs substrates: the effect of initial growth conditions

Riesz, Ferenc; Lischka, K.; Rakennus, K.; Hakkarainen, Tuula; Pesek, A.

doi:10.1016/0022-0248(91)90687-z

Cited by 29 publications

(7 citation statements)

References 20 publications

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“…This effect is well known for strained epilayers on miscut substrates. For relaxed layers it is explained by the preference of the slip system in the direction of the miscut over the other ͑Nagai, 1974; Riesz et al, 1991;Hess et al, 1999͒. The lower part of Figure 12 shows the tilt of the epi-Ge relative to the Si substrate. It is obvious that there exists a periodic modulation between the measuring points and the fitted sinusoidal function.…”

Section: Resultsmentioning

confidence: 99%

Laboratory-based characterization of heteroepitaxial structures: Advanced experiments not needing synchrotron radiation

2010

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It is demonstrated that a complex X-ray characterization of semiconductor films epitaxially grown on metal oxide buffer layers and Si(111) substrates is possible using laboratory-based equipment. This is demonstrated with epi-germanium on Pr2O3 as buffer material. Pole figure measurements prove that epi-Ge layers are nearly single crystalline with exactly the same in-plane orientation (type A) as the Si(111) substrate, while the lattice of the oxide layer is 180° rotated around the [111] surface normal (type B). Only a small fraction (less than 0.6 vol %) of the epi-Ge exhibits type B rotation twins. The main structural defects are microtwin lamellas lying in {111} planes 70.5° inclined to the wafer surface. The different in-plane orientation of the Si substrate and epi-Ge on one side and the Pr2O3 buffer layer on the other side allows a very sensitive analysis of strain and defects even for a 10-nm oxide layer buried under a 100-nm Ge. The epi-Ge layers are nearly fully relaxed and the Pr2O3 buffer layer is compressively strained. Due to the existing defects the Ge (111) planes are tilted in a characteristic pattern relative to the Si substrate.

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Section: Resultsmentioning

confidence: 99%

Laboratory-based characterization of heteroepitaxial structures: Advanced experiments not needing synchrotron radiation

2010

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“…This effect is well known for strained epi layers on miscut substrates. For relaxed layers, it is explained by the preference of the slip system in the direction of the miscut over the other 19–21.…”

Section: Resultsmentioning

confidence: 99%

X‐ray characterization of epi‐Ge/Pr₂O₃/Si(111) layer stacks by pole figures and reciprocal space mapping

Zaumseil

Giussani

Rodenbach

et al. 2009

Physica Status Solidi (a)

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An epi‐Ge/Pr2O3/Si(111) layer structure prepared by consecutive steps of epitaxial deposition and annealing is used to demonstrate the possibility of a complex characterization by combination of different X‐ray diffraction techniques. Especially pole figure measurements, reciprocal space mapping (RSM) and high resolution (HR) Θ/2Θ scans at selected inclined netplanes were successfully used to determine the in‐plane lattice orientation of the layers relative to the substrate, the strain state of all layers and the structural perfection of the epi‐Ge film. It was found that the major part of the epi‐Ge layer has the same type A stacking orientation as the Si substrate, but about 0.6% is of type B. The Pr2O3 buffer layer exhibits type B only. The strain state of oxide and epi‐Ge was determined, and a small difference in the lattice constant of type A and B epi‐Ge was found. Microtwins lying in inclined {111} planes were unambiguously identified by pole figure measurements as the dominating structural defects in the epi‐Ge layer. They cause a characteristic scattering pattern in reciprocal space maps. The proposed combination of X‐ray techniques allows a relatively fast, integral and non‐destructive analysis of heteroepitaxial semiconductor oxide semiconductor structures.

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“…This effect is well-known for strained epi layers on miscut substrates. For relaxed layers it is explained by the preference of the slip system in the direction of the miscut over the other (Nagai, 1974;Riesz et al, 1991;Hess et al, 1999). The lower part of figure 12 shows the tilt of the epi-Ge relative to the Si substrate.…”

Section: Resultsmentioning

confidence: 99%

D-15 Invited—Laboratory-Based Characterization of Heteroepitaxial Structures: Advanced Experiments Not Needing Synchrotron Radiation

Zaumseil

2009

Powder Diffr.

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It is demonstrated that a complex X-ray characterization of semiconductor films epitaxially grown on metal oxide buffer layers and Si(111) substrates is possible using laboratory-based equipment. This is demonstrated with epi-Germanium on Pr 2 O 3 as buffer material. Pole figure measurements prove that epi-Ge layers grow nearly completely single crystalline with exactly the same in-plane orientation (type A) as the Si(111) substrate, while the lattice of the oxide layer is 180 [111] surface normal (type B). Only a small fraction (less than 0.6 vol. %) of the epi-Ge exhibits type B rotation twins. The main structural defects are micro twin lamellas lying in {111} planes 70.5 inclined to the wafer surface. The different in-plane orientation of Si substrate and epi-Ge on one side and the Pr 2 O 3 buffer layer on the other side allows a very sensitive analysis of strain and defects even for a 10 nm thick oxide layer buried under some hundred nm of Ge. The epi-Ge layers are nearly fully relaxed and the Pr 2 O 3 buffer layer is compressively strained. Due to the existing defects the Ge (111) netplanes are tilted in a characteristic pattern relative to the Si substrate.

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Tilting of lattice planes in InP epilayers grown on miscut GaAs substrates: the effect of initial growth conditions

Cited by 29 publications

References 20 publications

Laboratory-based characterization of heteroepitaxial structures: Advanced experiments not needing synchrotron radiation

Laboratory-based characterization of heteroepitaxial structures: Advanced experiments not needing synchrotron radiation

X‐ray characterization of epi‐Ge/Pr₂O₃/Si(111) layer stacks by pole figures and reciprocal space mapping

D-15 Invited—Laboratory-Based Characterization of Heteroepitaxial Structures: Advanced Experiments Not Needing Synchrotron Radiation

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Tilting of lattice planes in InP epilayers grown on miscut GaAs substrates: the effect of initial growth conditions

Cited by 29 publications

References 20 publications

Laboratory-based characterization of heteroepitaxial structures: Advanced experiments not needing synchrotron radiation

Laboratory-based characterization of heteroepitaxial structures: Advanced experiments not needing synchrotron radiation

X‐ray characterization of epi‐Ge/Pr2O3/Si(111) layer stacks by pole figures and reciprocal space mapping

D-15 Invited—Laboratory-Based Characterization of Heteroepitaxial Structures: Advanced Experiments Not Needing Synchrotron Radiation

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X‐ray characterization of epi‐Ge/Pr₂O₃/Si(111) layer stacks by pole figures and reciprocal space mapping