2017
DOI: 10.1109/tcad.2017.2681064
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Tier Degradation of Monolithic 3-D ICs: A Power Performance Study at Different Technology Nodes

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Cited by 9 publications
(18 citation statements)
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“…In M3D ICs, the two tiers are fabricated sequentially, while the conventional high-temperature annealing procedure can potentially cause damage to the transistors and copper interconnects on the other tier, and lead to performance degradation. Two methods have been proposed to mitigate this issue [20]: 1) utilize a low-temperature process on the top tier; 2) employee heat-tolerate material, such as tungsten, for the interconnects on the bottom tier. In our logic-on-memory 3D ICs, there are fewer signal interconnects on the bottom memory tier, while the standard-cell transistors on the top logic tier have much greater impact on the performance of the M3D IC.…”
Section: D Tier Degradation and Characterizationsmentioning
confidence: 99%
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“…In M3D ICs, the two tiers are fabricated sequentially, while the conventional high-temperature annealing procedure can potentially cause damage to the transistors and copper interconnects on the other tier, and lead to performance degradation. Two methods have been proposed to mitigate this issue [20]: 1) utilize a low-temperature process on the top tier; 2) employee heat-tolerate material, such as tungsten, for the interconnects on the bottom tier. In our logic-on-memory 3D ICs, there are fewer signal interconnects on the bottom memory tier, while the standard-cell transistors on the top logic tier have much greater impact on the performance of the M3D IC.…”
Section: D Tier Degradation and Characterizationsmentioning
confidence: 99%
“…We now consider the performance degradation caused by M3D fabrication process in our implementation and analysis flow and mitigate the impacts with tungsten-based heterogeneous 3D interconnects. As described in Section IV-C, two methods have been proposed to mitigate this issue [20]: 1) utilize a low-temperature process on the top tier; 2) employee heattolerate material, such as tungsten, for the interconnects on the bottom tier. In our logic-on-memory 3D ICs, there are fewer signal interconnects on the bottom memory tier, while the standard-cell transistors on the top logic tier have a much greater impact on the performance of the M3D IC.…”
Section: A Reviewermentioning
confidence: 99%
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“…Several works have explored the challenges associated with the M3D fabrication and manufacturing processes [11,22]. Due to high temperatures, sequential fabrication of the top tier over the bottom tier affects the quality of transistors and interconnects in the bottom tier during the ion implantation and thermal annealing processes.…”
Section: Related Workmentioning
confidence: 99%
“…However, state-of-the-art M3D integration faces technology-and fabrication-related challenges that negatively impact the performance of M3D circuits. The sequential integration of M3D requires a low-temperature top-tier annealing process to prevent any degradation in bottom-tier transistors [10,22] and alternative metals (e.g., tungsten) for the bottom-tier interconnects to withstand the high fabrication temperatures [11,22]. However, these decisions slow down the top-tier transistors and bottom-tier interconnects resulting in inter-tier process variations.…”
Section: Introductionmentioning
confidence: 99%