Emerging monolithic 3D integration: Opportunities and challenges from the computer system perspective

Cheng, Yuanqing; Guo, Xiaochen; Pavlidis, Vasilis F.

doi:10.1016/j.vlsi.2022.04.004

Cited by 12 publications

(3 citation statements)

References 75 publications

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“…The thermal stability of the oxide semiconductor FeFETs is essential for their M3D integration [41,42]. In addition, the previous studies indicate that the post-annealing at 325 °C for 180 s in O 2 can significantly improve the performance of the InO x -channel FETs [24].…”

Section: Resultsmentioning

confidence: 99%

Performance improvement of Hf_0.45Zr_0.55O _x ferroelectric field effect transistor memory with ultrathin Al–O bonds-modified InO _x channels

Wang¹,

Xiao²,

Luo³

et al. 2023

Nanotechnology

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Ferroelectric field effect transistor (FeFET) memories with hafnium zirconium oxide (HZO) ferroelectric gate dielectric and ultrathin InOx channel exhibit promising applicability in monolithic 3-dimensional (M3D) integrated chips. However, the inferior stability of the devices severely limits their applications. In this work, we studied the effect of single cycle of atomic-layer-deposited Al-O bonds repeatedly embedded into an ultrathin InOx channel (~2.8 nm) on the Hf0.45Zr0.55O2 FeFET memory performance. Compared to the pure InOx channel, three cycles of Al-O bonds modified InOx channel (IAO-3) generates a much larger memory window (i.e., drain current ratio between the programmed and erased devices) under the same program conditions (+5.5 V/500 ns), especially after post-annealing at 325 ℃ for 180 s in O2

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Section: Resultsmentioning

confidence: 99%

Performance improvement of Hf_0.45Zr_0.55O _x ferroelectric field effect transistor memory with ultrathin Al–O bonds-modified InO _x channels

Wang¹,

Xiao²,

Luo³

et al. 2023

Nanotechnology

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“…In addition, these systems often present low-density and low-level sensory processing capabilities; much effort is therefore needed to improve integration and functional complexity of hybrid sensing systems. ,, Moreover, long distances (from micrometer to millimeter scales) between sensing and processing units are unavoidable due to different manufacturing processes, resulting in long parasitic resistance–capacitance time delays and high-power consumption . Emerging integration concepts, such as 3D monolithic integration currently under development for rigid electronics, − should be explored in flexible sensing systems.…”

Section: Discussionmentioning

confidence: 99%

Technology Roadmap for Flexible Sensors

et al. 2023

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Humans rely increasingly on sensors to address grand challenges and to improve quality of life in the era of digitalization and big data. For ubiquitous sensing, flexible sensors are developed to overcome the limitations of conventional rigid counterparts. Despite rapid advancement in bench-side research over the last decade, the market adoption of flexible sensors remains limited. To ease and to expedite their deployment, here, we identify bottlenecks hindering the maturation of flexible sensors and propose promising solutions. We first analyze challenges in achieving satisfactory sensing performance for real-world applications and then summarize issues in compatible sensor-biology interfaces, followed by brief discussions on powering and connecting sensor networks. Issues en route to commercialization and for sustainable growth of the sector are also analyzed, highlighting environmental concerns and emphasizing nontechnical issues such as business, regulatory, and ethical considerations. Additionally, we look at future intelligent flexible sensors. In proposing a comprehensive roadmap, we hope to steer research efforts towards common goals and to guide coordinated development strategies from disparate communities. Through such collaborative efforts, scientific breakthroughs can be made sooner and capitalized for the betterment of humanity.

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“…However, TSV does not scale well as the technology node size shrinks. Recently proposed monolithic three-dimensional (M3D) integration, also called 3D sequential integration, allows integration of ICs on top of each other on a single silicon substrate [21].…”

Section: B Sota Reram Acceleratorsmentioning

confidence: 99%

Thermal Heating in ReRAM Crossbar Arrays: Challenges and Solutions

Smagulova,

Fouda,

Eltawil

2024

IEEE Open J. Circuits Syst.

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The high speed, scalability, and parallelism offered by ReRAM crossbar arrays foster the development of ReRAM-based next-generation AI accelerators. At the same time, the sensitivity of ReRAM to temperature variations decreases R 𝑂 𝑁 /R 𝑂𝐹𝐹 ratio and negatively affects the achieved accuracy and reliability of the hardware. Various works on temperatureaware optimization and remapping in ReRAM crossbar arrays reported up to 58% improvement in accuracy and 2.39× ReRAM lifetime enhancement. This paper classifies the challenges caused by thermal heat, starting from constraints in ReRAM cells' dimensions and characteristics to their placement in the architecture. In addition, it reviews the available solutions designed to mitigate the impact of these challenges, including emerging temperature-resilient Deep Neural Network (DNN) training methods. Our work also provides a summary of the techniques and their advantages and limitations.

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Emerging monolithic 3D integration: Opportunities and challenges from the computer system perspective

Cited by 12 publications

References 75 publications

Performance improvement of Hf_0.45Zr_0.55O _x ferroelectric field effect transistor memory with ultrathin Al–O bonds-modified InO _x channels

Performance improvement of Hf_0.45Zr_0.55O _x ferroelectric field effect transistor memory with ultrathin Al–O bonds-modified InO _x channels

Technology Roadmap for Flexible Sensors

Thermal Heating in ReRAM Crossbar Arrays: Challenges and Solutions

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Emerging monolithic 3D integration: Opportunities and challenges from the computer system perspective

Cited by 12 publications

References 75 publications

Performance improvement of Hf0.45Zr0.55O x ferroelectric field effect transistor memory with ultrathin Al–O bonds-modified InO x channels

Performance improvement of Hf0.45Zr0.55O x ferroelectric field effect transistor memory with ultrathin Al–O bonds-modified InO x channels

Technology Roadmap for Flexible Sensors

Thermal Heating in ReRAM Crossbar Arrays: Challenges and Solutions

Contact Info

Product

Resources

About

Performance improvement of Hf_0.45Zr_0.55O _x ferroelectric field effect transistor memory with ultrathin Al–O bonds-modified InO _x channels

Performance improvement of Hf_0.45Zr_0.55O _x ferroelectric field effect transistor memory with ultrathin Al–O bonds-modified InO _x channels