TID and SEE Response of an Advanced Samsung 4Gb NAND Flash Memory

Oldham, T.R.; Friendlich, M.; Howard, James W.; Berg, Melanie D.; Kim, H.S.; Irwin, T.; LaBel, Kenneth A.

doi:10.1109/redw.2007.4342570

Cited by 27 publications

(10 citation statements)

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“…The results from other recent heavy ion radiation testing suggest 4 Gbit Flash Memory [9] exhibits better performance than observed during the testing of the 8 Gbit flash memory on the Serial Communications assembly and are the suggested maximum device density for future missions that incorporate this design.…”

Section: Leo Radiation Environmentmentioning

confidence: 82%

A flexible COTS-based serial communications solution with high density memory storage

Greenlaw

Innocenti

Arrigo

2009

2009 IEEE Aerospace Conference

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An assembly that processes up to 16 differential serial communication channels was designed using Commercial Off The Shelf (COTS) components. The Trailblazer program needed a rapid and cost effective implementation for interfacing with large number of serial communications devices. The lack of available off-the-shelf serial communication assemblies in a 3U form factor with this capability was the motivation for this work.

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Section: Leo Radiation Environmentmentioning

confidence: 82%

A flexible COTS-based serial communications solution with high density memory storage

Greenlaw

Innocenti

Arrigo

2009

2009 IEEE Aerospace Conference

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“…9) The susceptibility of a given technology to neutron effects is linked to its susceptibility to heavy ions effects. Several reports have addressed this topic in last years [16], [17], [26]- [28], finding very similar results among a broad range of technologies, including nitride trapping devices [28]. Hence, these considerations apply in the same way to all Flash technologies.…”

mentioning

confidence: 83%

Can Atmospheric Neutrons Induce Soft Errors in nand Floating Gate Memories?

Cellere

Gerardin

Bagatin

et al. 2009

IEEE Electron Device Lett.

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Atmospheric neutrons can interact with the matter inside a microelectronic chip and generate ionizing particles, which in turn can change the state of one or more memory bits [soft error (SE)]. In this letter, we show that SEs are possible in Flash memories, although with extremely low probabilities. While this problem will increase for future technologies, we do not expect SEs to be the reliability limiting factor for further Floating Gate scaling.Index Terms-Atmospheric neutron, flash memories, soft error (SE) rate.

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“…One main aspect is the sensitivity of NAND-Flash devices to space radiation. TID test results of NAND-Flash memories with device capacities up to 4 Gbit have been reported in [7]- [14]. Here we report the results of our most recent TID tests of state of the art NANDFlash devices with the main focus on the Samsung 8 Gbit Flash.…”

Section: Introductionmentioning

confidence: 94%