Ti3C2/ϵ-Ga2O3Schottky Self-Powered Solar-Blind Photodetector With Robust Responsivity

Yan, Zuyong; Li, Shan; Liu, Zeng; Liu, Wenjie; Qiao, Fen; Li, Peigang; Tang, Xiao; Li, Xiaohang; Yue, Jianying; Guo, Yufeng; Tang, Weihua

doi:10.1109/jstqe.2021.3124824

Cited by 19 publications

(18 citation statements)

References 41 publications

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“…Responsivity ( R ) represents the electrical output measured per photon eq , R = I normalp − I normald P × S where I p , I d , P , and S indicate the photocurrent, dark current, light intensity, and photosensitive area, respectively. Figure c illustrates the R of Ga 2 O 3 – x Ti 3 C 2 T x with various Ti 3 C 2 T x contents at 6 V. Ga 2 O 3 – x Ti 3 C 2 T x also shows an inverted V shape with an increase of Ti 3 C 2 T x content.…”

Section: Resultsmentioning

confidence: 99%

“…The decay time is determined by the time from 90 to 10% photocurrent when the light is turned off . The rise and decay times can also be calculated by eqs and , respectively ,, I false( t false) = A 1 0.25em exp ( − t t r ) + I 0 I false( t false) = I 0 − A 1 0.25em exp ( − t t d ) where I 0 , A 1 , t , t r , and t d indicate the steady-state light or dark current contribution, constant, time, rise time, and decay time, respectively. The rise and decay times of the optimal Ga 2 O 3 –5Ti 3 C 2 T x are 0.052 and 0.091 s (Figure f), which may be ascribed to the inhibition of the combination of photogenerated electrons and holes and the high conductivity of Ti 3 C 2 T x …”

Section: Resultsmentioning

confidence: 99%

“…For example, Cao et al fabricated ZnO/Ti 3 C 2 T x hybrid UV photodetectors via a simple dipping method, which shows a high responsivity of 5.05 A W –1 and an EQE of 2386% deduced to the high conductivity of Ti 3 C 2 T x . Yan reported a Ti 3 C 2 /ε-Ga 2 O 3 Schottky junction photodetector via dropping a Ti 3 C 2 colloidal solution on the surface of the ε-Ga 2 O 3 film, which displays a remarkable photoresponse rise/decay time of 4.3/145 ms, responsivity of 15.5 mA W –1 , and detectivity of 2.15 × 10 11 Jones. The reasons originate from the high conductivity of MXenes, the good crystallization of ε-Ga 2 O 3 , and the well-matched energy level.…”

Section: Introductionmentioning

confidence: 99%

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Ga₂O₃–MXene Nanowire Networks with Enhanced Responsivity for Deep-UV Photodetection

et al. 2023

ACS Appl. Nano Mater.

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Ga 2 O 3 is a promising semiconductor for solar-blind (200−280 nm) photodetectors. Two-dimensional (2D) MXenes have been widely applied in the optoelectronic area owing to their high conductivity and large specific surface area. The few-layered Ti 3 C 2 T x (Ti 3 C 2 T x -few) exhibits elevated properties compared with multilayered Ti 3 C 2 T x . Herein, we innovatively adopt a hydrothermal method to prepare Ti 3 C 2 T x -few. A Ga 2 O 3 −Ti 3 C 2 T x 3D network heterojunction is fabricated by van der Waals interaction between one-dimensional (1D) nanowires and 2D nanosheets using the light trapping effect at the interface of the heterostructure. The van der Waals force between Ga 2 O 3 and Ti 3 C 2 T x -few enhances the contact for the transfer of photoelectrons. The optimal Ga 2 O 3 −5Ti 3 C 2 T x exhibits enhanced responsivity (140.57 mA W −1 ), defectivity (4.87 × 10 12 Jones), and external quantum efficiency (68.66%), which are 6.67, 3.20, and 6.68 times higher than that of pure Ga 2 O 3 nanowires under deepultraviolet light (254 nm). The improved properties of Ga 2 O 3 −xTi 3 C 2 T x heterostructure are attributed to the high conductivity of Ti 3 C 2 T x -few, enhanced separation of photogenerated electrons and holes, decreased Schottky barrier height, enlarged depletion region, increased UV light absorption, and enhanced contact via van der Waals force between Ga 2 O 3 and Ti 3 C 2 T x . In conclusion, the Ga 2 O 3 −Ti 3 C 2 T x heterojunction extends the application of Ti 3 C 2 T x -few and provides a new tactic to improve the performance of the Ga 2 O 3 -based photodetector.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Ga₂O₃–MXene Nanowire Networks with Enhanced Responsivity for Deep-UV Photodetection

et al. 2023

ACS Appl. Nano Mater.

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“…However, self-powered PDs using the p–n heterojunction with n-type Ga 2 O 3 and asymmetrical Schottky contacts are difficult to fabricate, and most of them suffer from high dark currents. With the p–n heterojunction, there are disadvantages of photosensitivity due to a narrow band gap and difficulty in growing high-quality epitaxial films due to large lattice mismatch of non-solar-blind materials. ,− …”

Section: Introductionmentioning

confidence: 99%

High Performance of Zero-Power-Consumption MOCVD-Grown β-Ga₂O₃-Based Solar-Blind Photodetectors with Ultralow Dark Current and High-Temperature Functionalities

Sheoran

Fang

Liang

et al. 2022

ACS Appl. Mater. Interfaces

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In this article, we report on high-performance deep ultraviolet photodetectors (DUV PDs) fabricated on metal−organic chemical vapor deposition (MOCVD)-grown β-Ga 2 O 3 heteroepitaxy that exhibit stable operation up to 125 °C. The fabricated DUV PDs exhibit self-powered behavior with an ultralow dark current of 1.75 fA and a very high photo-todark-current ratio (PDCR) of the order of 10 5 at zero bias and >10 5 at higher biases of 5 and 10 V, which remains almost constant up to 125 °C. The high responsivity of 6.62 A/W is obtained at 10 V at room temperature (RT) under the weak illumination of 42.86 μW/cm 2 of 260 nm wavelength. The detector shows very low noise equivalent power (NEP) of 5.74 × 10 −14 and 1.03 × 10 −16 W/Hz 1/2 and ultrahigh detectivity of 5.51 × 10 11 and 3.10 × 10 14 Jones at 0 and 5 V, respectively, which shows its high detection sensitivity. The RT UV−visible (260:500 nm) rejection ratios of the order of 10 3 at zero bias and 10 5 at 5 V are obtained. These results demonstrate the potential of Ga 2 O 3 -based DUV PDs for solar-blind detection applications that require high-temperature robustness.

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“…An effective compromise to further improve the device performance of Ga 2 O 3 -based solar-blind PEC-PDs such as responsivity, response speed, on–off ratio, etc., is to introduce one-dimensional vertical core/shell heterojunction nanowire arrays to construct optoelectronic devices. ,, Nanowire arrays can provide better light absorption because of the large surface-to-volume ratio . Furthermore, core–shell heterostructures can facilitate the separation and transport of charges, enhancing the functionality of applications such as sensing, solar cells, and photodetectors. − Herein, we demonstrate a self-powered GaN@Ga 2 O 3 NAs solar-blind PEC-PD. Vertical GaN@Ga 2 O 3 core–shell NAs on GaN/sapphire templates were obtained by a combined inductively coupled plasma (ICP) etching and thermal oxidation method.…”

Section: Introductionmentioning

confidence: 99%

Self-Powered Solar-Blind Photodetectors Based on Vertically Aligned GaN@Ga₂O₃ Core–Shell Nanowire Arrays

Ding

Chen

Xiu

et al. 2022

ACS Appl. Nano Mater.

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The self-powered photodetector has recently received wide attention as a fundamental component of energy-saving optoelectronic systems. In this study, the GaN@Ga 2 O 3 core−shell nanowire arrays (NAs) were used as the photoanode for the selfpowered solar-blind photoelectrochemical-type photodetectors (PEC-PDs). The vertically aligned GaN@Ga 2 O 3 core−shell NAs on the GaN template was fabricated by the inductively coupled plasma etching combined with the thermal oxidation process. Under 255 nm illumination without an external power supply, the device exhibits a maximum responsivity of 93.48 mA/W, yielding a high external quantum efficiency of 45.54%, which shows one of the best values among the reported solar-blind Ga 2 O 3 -based PEC-PDs. Furthermore, the device shows a fast response speed (τ r = 25 ms, τ d = 5 ms) and good stability. Such excellent performance under zero bias may benefit from the superior light-absorbing capability of the vertical NAs, the good solid/liquid contact realized by the nanostructures, and the efficient photogenerated carrier separation driven by the double built-in electric field. This work provides a simple and feasible route to construct high-performance solar-blind Ga 2 O 3based PEC-PDs.

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Ti₃C₂/ϵ-Ga₂O₃Schottky Self-Powered Solar-Blind Photodetector With Robust Responsivity

Cited by 19 publications

References 41 publications

Ga₂O₃–MXene Nanowire Networks with Enhanced Responsivity for Deep-UV Photodetection

Ga₂O₃–MXene Nanowire Networks with Enhanced Responsivity for Deep-UV Photodetection

High Performance of Zero-Power-Consumption MOCVD-Grown β-Ga₂O₃-Based Solar-Blind Photodetectors with Ultralow Dark Current and High-Temperature Functionalities

Self-Powered Solar-Blind Photodetectors Based on Vertically Aligned GaN@Ga₂O₃ Core–Shell Nanowire Arrays

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Ti3C2/ϵ-Ga2O3Schottky Self-Powered Solar-Blind Photodetector With Robust Responsivity

Cited by 19 publications

References 41 publications

Ga2O3–MXene Nanowire Networks with Enhanced Responsivity for Deep-UV Photodetection

Ga2O3–MXene Nanowire Networks with Enhanced Responsivity for Deep-UV Photodetection

High Performance of Zero-Power-Consumption MOCVD-Grown β-Ga2O3-Based Solar-Blind Photodetectors with Ultralow Dark Current and High-Temperature Functionalities

Self-Powered Solar-Blind Photodetectors Based on Vertically Aligned GaN@Ga2O3 Core–Shell Nanowire Arrays

Contact Info

Product

Resources

About

Ti₃C₂/ϵ-Ga₂O₃Schottky Self-Powered Solar-Blind Photodetector With Robust Responsivity

Ga₂O₃–MXene Nanowire Networks with Enhanced Responsivity for Deep-UV Photodetection

Ga₂O₃–MXene Nanowire Networks with Enhanced Responsivity for Deep-UV Photodetection

High Performance of Zero-Power-Consumption MOCVD-Grown β-Ga₂O₃-Based Solar-Blind Photodetectors with Ultralow Dark Current and High-Temperature Functionalities

Self-Powered Solar-Blind Photodetectors Based on Vertically Aligned GaN@Ga₂O₃ Core–Shell Nanowire Arrays