High Performance of Zero-Power-Consumption MOCVD-Grown β-Ga₂O₃-Based Solar-Blind Photodetectors with Ultralow Dark Current and High-Temperature Functionalities

Abstract

In this article, we report on high-performance deep ultraviolet photodetectors (DUV PDs) fabricated on metal−organic chemical vapor deposition (MOCVD)-grown β-Ga 2 O 3 heteroepitaxy that exhibit stable operation up to 125 °C. The fabricated DUV PDs exhibit self-powered behavior with an ultralow dark current of 1.75 fA and a very high photo-todark-current ratio (PDCR) of the order of 10 5 at zero bias and >10 5 at higher biases of 5 and 10 V, which remains almost constant up to 125 °C. The high responsivity of 6.62 A/W is obtained at 10 V at room temperature (RT) under the weak illumination of 42.86 μW/cm 2 of 260 nm wavelength. The detector shows very low noise equivalent power (NEP) of 5.74 × 10 −14 and 1.03 × 10 −16 W/Hz 1/2 and ultrahigh detectivity of 5.51 × 10 11 and 3.10 × 10 14 Jones at 0 and 5 V, respectively, which shows its high detection sensitivity. The RT UV−visible (260:500 nm) rejection ratios of the order of 10 3 at zero bias and 10 5 at 5 V are obtained. These results demonstrate the potential of Ga 2 O 3 -based DUV PDs for solar-blind detection applications that require high-temperature robustness.

Enhancing Performance of Ultraviolet C Photodetectors Through Single‐Domain Epitaxy of Monoclinic β‐Ga2O3 Films and Tailored Anti‐Reflection Coating

“…Figure 5h shows a comparison of the response time and R with those of previously reported 𝛽-Ga 2 O 3 UVC PD-based epitaxial thin films (Table S3, Supporting Information). [33][34][35][36][37][38][39][40][41][42][43][44][45] Our results demonstrate a higher value in terms of R and 𝜏 compared with pristine 𝛽-Ga 2 O 3 , nanostructures, and nanoparticledecorated 𝛽-Ga 2 O 3 UVC PDs.…”

A nanoflower-like GaSe/β-Ga2O3 based heterostructure for highly efficient self-powered broadband photodetectors

“…Numerous widebandgap semiconducting materials, such as AlGaN, diamond, ZnMgO, and b-Ga 2 O 3 , are now the primary focus for developing solar-blind photodetectors. [7][8][9][10] Specifically, b-Ga 2 O 3 is suitable for solar-blind photodetection devices because of its excellent thermal conductivity, high melting point, thermal and chemical stability, and significant breakdown voltage. 1,[11][12][13][14] But b-Ga 2 O 3 -based devices still need improvement in their dark current, photoresponsivity, response speed, EQE, and detectivity for practical applications.…”

Interfacial Properties of the SnO/κ-Ga2O3 p-n Heterojunction: A Case of Subsurface Doping Density Reduction via Thermal Treatment in κ-Ga2O3

“…Therefore, bulk single crystals may be produced by melt growth techniques such as Czochralski (CZ), floating zone (FZ), vertical Bridgman, and edge-defined film-fed growth (EFG), which paves the way to production of high-quality substrates − as well as to homoepitaxy. Many growth methods are available for epitaxial growth of Ga 2 O 3 polymorphs such as metal–organic chemical vapor deposition (MOCVD), , magnetron sputtering, , mist-chemical vapor deposition (Mist-CVD), , atomic layer deposition (ALD), , pulsed laser deposition (PLD), halide vapor phase epitaxy, and molecular beam epitaxy (MBE). , In spite of the numerous merits of the β-Ga 2 O 3 , there are concerns regarding its anisotropic thermal conductivity and easiness of cleavage. ,, κ-Ga 2 O 3 is the second most stable polymorph, and its orthorhombic cell has higher symmetry with respect to the monoclinic one, which may lead to easier epitaxial growth and novel heterostructures. , Furthermore, it exhibits a spontaneous polarization along the [001] direction of the orthorhombic cell that could help to obtain high-density two-dimensional electron gases (2DEG) at the interface of κ-Ga 2 O 3 based heterostructures, , and thus a conducting channel for high-mobility field effect transistors, which is becoming one of the most intriguing topics of the literature on Ga 2 O 3 . Recently, κ-Ga 2 O 3 , was employed for fabrication of planar diodes and solar-blind UV–C photodetectors .…”