Ti₃C₂-Based MXene Oxide Nanosheets for Resistive Memory and Synaptic Learning Applications

Abstract

MXene, a new state-of-the-art two-dimensional (2D) nanomaterial, has attracted considerable interest from both industry and academia because of its excellent electrical, mechanical, and chemical properties. However, MXene-based device engineering has rarely been reported. In this study, we explored Ti 3 C 2 MXene for digital and analog computing applications by engineering the top electrode. For this purpose, Ti 3 C 2 MXene was synthesized by a simple chemical process, and its structural, compositional, and morphological properties were studied using various analytical tools. Finally, we explored its potential application in bipolar resistive switching (RS) and synaptic learning devices. In particular, the effect of the top electrode (Ag, Pt, and Al) on the RS properties of the Ti 3 C 2 MXene-based memory devices was thoroughly investigated. Compared with the Ag and Pt top electrodebased devices, the Al/Ti 3 C 2 /Pt device exhibited better RS and operated more reliably, as determined by the evaluation of the charge-magnetic property and memory endurance and retention. Thus, we selected the Al/Ti 3 C 2 /Pt memristive device to mimic the potentiation and depression synaptic properties and spike-timingdependent plasticity-based Hebbian learning rules. Furthermore, the electron transport in this device was found to occur by a filamentary RS mechanism (based on oxidized Ti 3 C 2 MXene), as determined by analyzing the electrical fitting curves. The results suggest that the 2D Ti 3 C 2 MXene is an excellent nanomaterial for non-volatile memory and synaptic learning applications.

Recent advances on crystalline materials-based flexible memristors for data storage and neuromorphic applications

“…2D materials possess a lot of unique characteristics such as ultrathin thickness, large specific surface area, excellent mechanical flexibility, and high transparency, which endow them with potential of implementing high-performance flexible and wearable electronics. In particular, the memristive effects have been observed in various 2D materials in the past few years, such as graphene oxide (GO), transition metal dichalcogenides (TMDs, such as MoS 2 ), black phosphorus (BP), boron nitride (BN), and MXenes [8,23,56,[70][71][72].…”

“…Furthermore, MXenes also own the potential for neuromorphic computing applications. Khot et al [70] investigated the bipolar resistive switching and synaptic learning properties of the Ti 3 C 2 MXene-based memristors (Fig. 9c).…”

Recent Progress in Selector and Self‐Rectifying Devices for Resistive Random‐Access Memory Application

“…[5,21] In addition to this, filamentary RS devices can be used for memory, neuromorphic computing, and security applications. [22][23][24] In general, the nonfilamentary RS devices show the analog/gradual-type RS. Therefore, these devices are frequently used for only neuromorphic computing applications.…”

Versatile memristor for memory and neuromorphic computing

“…Volatile/non-volatile bifunctional memristors with one or two functions have been studied, as shown in Table 1. [13][14][15][16][17][18][19][20][21][22][23][24][25][26][27][28][29][30] However, versatile memristors covering multiple functions, such as non-volatile memory, selectors, artificial neurons, and artificial synapses have not been investigated. It is difficult to guarantee large storage windows (both volatile and non-volatile models), excellent endurance, and multiple functions simultaneously.…”