Ti-Si-N diffusion barriers between silicon and copper

Reid, J.S.; Sun, Xin; Kolawa, E.; Nicolet, M.‐A.

doi:10.1109/55.296222

Cited by 83 publications

(41 citation statements)

References 19 publications

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“…Particularly, ternary amorphous thin films such as (Ta, W, Mo, Ti)-Si-N [8,9], W-B-N [10] are considered as the most effective diffusion barrier due to their high crystallization temperatures. However, ternary amorphous metallic thin film consisting of two transition metals and N has not been reported.…”

Section: Introductionmentioning

confidence: 99%

Diffusion barrier performance of reactively sputtered Ta–W–N between Cu and Si

Liu

Song

Mao

et al. 2004

Microelectronic Engineering

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Section: Introductionmentioning

confidence: 99%

Diffusion barrier performance of reactively sputtered Ta–W–N between Cu and Si

Liu

Song

Mao

et al. 2004

Microelectronic Engineering

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“…It is well known that ternary amorphous thin films generally show excellent barrier properties due to their high crystallization temperatures. Recently, ternary amorphous thin films such as Ti-Si-N, Mo-Si-N, W-Si-N, Ta-Si-N have been studied extensively as suitable diffusion barriers for Cu metallization [8][9][10]. In this article, we introduced a new ternary amorphous thin film -Zr-Si-N as Cu diffusion barrier and focus on investigating thermal stability of the thin film under high annealing temperature.…”

Section: Introductionmentioning

confidence: 99%

High temperature stability of Zr–Si–N diffusion barrier in Cu/Si contact system

Wang

Chen

Song

et al. 2004

Microelectronic Engineering

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“…Many studies used p-n diodes with Cu layers to evaluate different materials for their diffusion barrier properties. [33][34][35][36][37][38][39][40][41][42][43][44][45][46] Among them, Baumann et al 46 studied the impact of Cu on the leakage current of p + -n diode with and without barrier layers. For the case where Cu was in direct contact with 3 Si silicide spikes were clearly observed by TEM-EDS after annealing the device at 120…”

Section: Figures 4a and 4b Show The 200mentioning

confidence: 99%

A Study on the Long-Term Degradation of Crystalline Silicon Solar Cells Metallized with Cu Electroplating

Huang¹,

Reuter²,

Zhu³

et al. 2015

ECS J. Solid State Sci. Technol.

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While using Cu electroplating to metallize silicon cells is of great interest, the long term reliability of such cells have not been well understood. In this paper silicon solar cells metallized with electroplated Cu were thermally stressed. The cell performance was characterized in conjunction with microscopic structure analysis to understand the long-term degradation mechanism and the effect of each different metal layer. The Ni silicide layer had little impact on the performance degradation at 200 • C. Increasing the thickness of a second Ni layer between the silicide and Cu significantly delayed this degradation, acting as a diffusion barrier. A series of cells annealed at different temperatures were used to extrapolate the degradation kinetics. Two different mechanisms were observed. Further silicidation of the second Ni layer was observed and was believed to cause the degradation at a higher temperature of 250 • C. However, this silicidation reaction rate dropped quickly as the temperature decreased and Cu diffusion became the dominant mechanism for cell degradation at temperatures below 200 • C. These two different mechanisms cross over at about 200 • C in this study, where both silicidation and Cu diffusion were observed. An improvement in the cell lifetime by replacing pure Ni with NiCo alloy was studied. In the standard manufacturing process flow of silicon solar cells, the front grids are formed with Ag screen printing. Replacing the screen-printed Ag with electroplated high aspect ratio Cu line has been proposed decades ago.1,2 This method has been of great interest primarily because of the lower conductivity and higher cost of Ag paste. In addition, the plated Cu potentially allows a higher aspect ratio or a smaller shadowing of the front grid and thus enables higher cell efficiencies. More importantly, the most recent development in laser patterning of the front grid allows an easy integration of the electroplating on the selective emitter formed by laser doping. [3][4][5] Different Cu metallization schemes have been reported before. 6,7 The schemes included electroless deposition of Ni and silicidation, [8][9][10] Cu electrodeposition on printed thin seed layer, 11 and electrodeposition of Ni and Cu.12-14 Among them, most of the schemes involve the formation of Ni silicide by annealing either electroless or electrolytic deposited Ni. The main purpose of the silicide is to lower the contact resistance between the metal and emitter and thus to improve the cell performance.Ni silicidation has been extensively studied for the application in complementary metal oxide semiconductor (CMOS) contacts. [15][16][17] Ni 2 Si silicide formation starts at as low as about 300• C, followed by monosilicide phases at around 400• C and silicon rich phases at above 800• C. However, small amount of Ni-richer phases such as Ni 3 Si and Ni 5 Si 2 could be observed at as low as 200• C. 15 All the studies for CMOS applications were performed on extremely thin Ni films fabricated using vacuum deposition. The silicide forme...

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Ti-Si-N diffusion barriers between silicon and copper

Cited by 83 publications

References 19 publications

Diffusion barrier performance of reactively sputtered Ta–W–N between Cu and Si

Diffusion barrier performance of reactively sputtered Ta–W–N between Cu and Si

High temperature stability of Zr–Si–N diffusion barrier in Cu/Si contact system

A Study on the Long-Term Degradation of Crystalline Silicon Solar Cells Metallized with Cu Electroplating

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