Ti-mask Selective-Area Growth of GaN by RF-Plasma-Assisted Molecular-Beam Epitaxy for Fabricating Regularly Arranged InGaN/GaN Nanocolumns

Sekiguchi, Hiroto; Kishino, Katsumi; Kikuchi, Akihiko

doi:10.1143/apex.1.124002

Cited by 186 publications

(199 citation statements)

References 21 publications

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“…72,76 The GaN nanorods were selectively grown on patterned 5 nm Ti/GaN/sapphire templates. The holes in the Ti mask layer were opened by focused ion beam etching.…”

Section: A Mbe Growthmentioning

confidence: 99%

GaN based nanorods for solid state lighting

Li¹,

Waag

2012

Journal of Applied Physics

490

394

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In recent years, GaN nanorods are emerging as a very promising novel route toward devices for nano-optoelectronics and nano-photonics. In particular, core-shell light emitting devices are thought to be a breakthrough development in solid state lighting, nanorod based LEDs have many potential advantages as compared to their 2 D thin film counterparts. In this paper, we review the recent developments of GaN nanorod growth, characterization, and related device applications based on GaN nanorods. The initial work on GaN nanorod growth focused on catalyst-assisted and catalyst-free statistical growth. The growth condition and growth mechanisms were extensively investigated and discussed. Doping of GaN nanorods, especially p-doping, was found to significantly influence the morphology of GaN nanorods. The large surface of 3 D GaN nanorods induces new optical and electrical properties, which normally can be neglected in layered structures. Recently, more controlled selective area growth of GaN nanorods was realized using patterned substrates both by metalorganic chemical vapor deposition (MOCVD) and by molecular beam epitaxy (MBE). Advanced structures, for example, photonic crystals and DBRs are meanwhile integrated in GaN nanorod structures. Based on the work of growth and characterization of GaN nanorods, GaN nanoLEDs were reported by several groups with different growth and processing methods. Core/shell nanoLED structures were also demonstrated, which could be potentially useful for future high efficient LED structures. In this paper, we will discuss recent developments in GaN nanorod technology, focusing on the potential advantages, but also discussing problems and open questions, which may impose obstacles during the future development of a GaN nanorod based LED technology.

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“…72,76 The GaN nanorods were selectively grown on patterned 5 nm Ti/GaN/sapphire templates. The holes in the Ti mask layer were opened by focused ion beam etching.…”

Section: A Mbe Growthmentioning

confidence: 99%

GaN based nanorods for solid state lighting

Li¹,

Waag

2012

Journal of Applied Physics

490

394

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“…A possible route can be found in the selective area growth ͑SAG͒ of MBE GaN NWs on patterned substrates, even though only few studies have been so far reported. [24][25][26][27] We demonstrate in this letter a method to obtain regular arrays of GaN NWs via SAG on a patterned Si mask. The study of SAG is relevant on the one hand for device applications, which require the control over the NW positioning and on the other hand for offering valuable information about the adatom kinetics of the NW growth process.…”

mentioning

confidence: 99%

Influence of the adatom diffusion on selective growth of GaN nanowire regular arrays

Gotschke

Schumann

Limbach

et al. 2011

Applied Physics Letters

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Molecular beam epitaxy (MBE) on patterned Si/AlN/Si(111) substrates was used to obtain regular arrays of uniform-size GaN nanowires (NWs). The silicon top layer has been patterned with e-beam lithography, resulting in uniform arrays of holes with different diameters (dh) and periods (P). While the NW length is almost insensitive to the array parameters, the diameter increases significantly with dh and P till it saturates at P values higher than 800 nm. A diffusion induced model was used to explain the experimental results with an effective diffusion length of the adatoms on the Si, estimated to be about 400 nm.

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“…Figure 3b shows a bright-field scanning TEM image of a GaN nanocolumn supporting bending nanoplates. The azimuthal incidence angle was [11][12][13][14][15][16][17][18][19][20]. Figure 3d shows the arrangements of Ga and N atoms in the N-polarity and Ga-polarity GaN crystals.…”

Section: Methodsmentioning

confidence: 99%

“…The growth mechanism has been discussed in detail in previous studies. 1,12,13 Note that these nanocrystals could not be fabricated by crystal growth without the Ti film, namely the growth directly on the N-polarity GaN layer did not realize such nanocrystals. In addition, the TEM images suggested that the supporting GaN nanocolumns of the nanoumbrellas did not include dislocations such as those reported for Ga-polarity GaN nanocolumns.…”

Section: Methodsmentioning

confidence: 99%

“…By combining electron beam lithography and ordinary crystal growth techniques (for example, metalorganic chemical vapor deposition and molecular beam epitaxy (MBE)), SAG techniques have successfully produced periodically arranged one-dimensional nanocrystal arrays. 1,[12][13][14][15][16][17][18] The arrangements and structures of these nitride nanocrystals are designed to act as tiny optical cavities of photonic crystals, ring resonators, and so on. Owing to their high degree of crystallinity and tiny optical cavities, such nitride nanocrystals are expected to be applicable in high-performance light-emitting diodes (LEDs) and laser diodes.…”

Section: Introductionmentioning

confidence: 99%

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Crystal structure and optical properties of a high-density InGaN nanoumbrella array as a white light source without phosphors

et al. 2016

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We demonstrated the fabrication of a peculiar GaN/InGaN-based high-density nanocrystal array on a nitrogen polarity GaN layer using a simple self-assembly process for the first time. The nanocrystals consist of bending InGaN nanoplates and supporting GaN nanocolumns. The nanocrystals are umbrella shaped with diameters of ∼ 200-700 nm; therefore, they are referred to as InGaN nanoumbrellas. Transmission electron microscopy revealed the crystal structures of the nanoumbrellas and provided information about their growth mechanism. The photoluminescence (PL) properties of the InGaN nanoumbrellas were also characterized, and an extremely wide range of optical emission wavelengths (∼360-800 nm) was obtained from a small excitation diameter of ∼ 10 μm. Multiple sharp peaks resembling lasing actions were also observed in the PL spectrum; the resonant mode was likely caused by the whispering gallery mode. These results indicate that the high-density GaN/InGaN-based nanoumbrella array can be used as a source of white light without phosphors.

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Ti-mask Selective-Area Growth of GaN by RF-Plasma-Assisted Molecular-Beam Epitaxy for Fabricating Regularly Arranged InGaN/GaN Nanocolumns

Cited by 186 publications

References 21 publications

GaN based nanorods for solid state lighting

GaN based nanorods for solid state lighting

Influence of the adatom diffusion on selective growth of GaN nanowire regular arrays

Crystal structure and optical properties of a high-density InGaN nanoumbrella array as a white light source without phosphors

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