Ti ion valence variation induced by ionizing radiation at TiO2/Si interface

Temperature dependent photoluminescence of photocatalytically active titania nanopowders

“…XPS analysis is usually used to evaluate the valence state of titanium atoms and the evolution of hydroxyl groups at the TiO 2 surface [17][18][19][20]. Whatever the TiO 2 powders, the Ti 2p XPS spectra confirmed that Ti is in the +4 oxidation state at the surface.…”

Response of metal oxide thin film structures to radiation

“…Gamma irradiation (10 6 -5 × 10 7 rad) degrades the electrical and dielectric properties of thin tantalum pentoxide layers obtained by RF sputtering and thermal oxidation in terms of dielectric constant, oxide charges and leakage current [24][25][26]. The main source of electrically active defects in irradiated films is associated with the oxygen vacancies and the broken Ta O and Si O bonds.…”

“…The main source of electrically active defects in irradiated films is associated with the oxygen vacancies and the broken Ta O and Si O bonds. After the electron and ␥-ray radiation of Titanium oxide films prepared by DC reactive sputtering method, the number of Ti 4+ ions decrease in the transition layer, Ti 4+ turns to Ti 3+ according the reaction 2TiO 2 → Ti 2 O 3 + O [25]. Thermal vacuum evaporated thin films of TeO 2 showed an increase in the values of current with the increase in radiation dose [26].…”

Various Structures Based on Nickel Oxide Thick Films as Gamma Radiation Sensors

“…A number of efforts were devoted to investigate the influence of radiation on the properties of metal oxide materials [11][12][13][14]. Gamma irradiation dose of 10 6 -5×10 7 rad degraded the electrical and dielectric properties of thin tantalum pentoxide layers obtained by RF sputtering and thermal oxidation in terms of dielectric constant, oxide charge and leakage current [12].…”

“…Gamma irradiation dose of 10 6 -5×10 7 rad degraded the electrical and dielectric properties of thin tantalum pentoxide layers obtained by RF sputtering and thermal oxidation in terms of dielectric constant, oxide charge and leakage current [12]. After the electron and γ-ray radiation of Titanium oxide films prepared by the DC reactive sputtering method, the number of Ti according to the reaction 2TiO 2 → Ti 2 O 3 +O [14]. The influence of ionising radiation on Nickel oxide and its mixture with other oxides prepared by various techniques has been explored [11,13].…”