volume 133, issue 1-3, P1-7 2006
DOI: 10.1016/j.mseb.2006.06.012
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Abstract: The properties of the materials undergo changes by the influence of ␥-rays. The degree of these changes could serve as a measure of the received radiation dose. Deep understanding of physical properties of the materials under the influence of radiation is vital for the effective design of devices for radiation-sensing applications. Mixing oxides in various proportions was found to control the radiation-sensing properties of the semiconductor films in terms of their sensitivity to ␥-radiation exposure and work…

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