THz‐emitter based on ballistic transport in nano‐pin diodes

Abstract

Conventional semiconductor‐based photomixers are limited by the carrier transit‐time‐roll‐off and the RC‐roll‐off of the device‐capacitance. We have developed a THz‐photomixer which can overcome both limitations and proves far superior to a conventional pin‐photomixer. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Controlling electronic properties of epitaxial nanocomposites of dissimilar materials

“…These ErAs particles placed at p-n junctions were demonstrated to improve performance in multijunction solar cells by reducing the voltage lost across the tunnel junctions between cells [42]. These tunnel junctions have also been employed by Dohler and coworkers in a photomixer based on ballistic travel across a series of pin diodes connected together with tunnel junctions [43][44][45][46][47][48][49].…”

Temperature dependence of dark current in a p–i–n photodiode incorporating a resonant tunneling structure

“…This process is of potential interest in many photonic devices. THz photomixers based on nano‐pin diodes of much superior performance than conventional pin photomixers have too been developed lately 11. In topical publications by Bavencove et al 12 and Miki et al 13, LEDs of nanometric scale incorporating multi‐QWs have been fabricated and shown to exhibit dramatic improvement in light emission efficiency as well as extremely low dark leakage currents.…”