Controlling electronic properties of epitaxial nanocomposites of dissimilar materials

Hanson, M.; Bank, Seth R.; Zide, Joshua M. O.; Zimmerman, Jeramy D.; Gossard, A. C.

doi:10.1016/j.jcrysgro.2006.11.250

Cited by 26 publications

(14 citation statements)

References 63 publications

(75 reference statements)

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“…Moreover, high electrical resistivity and a lack of PL signal were consistent with energy band predictions and previous results in other rare earth-V/III-V nanocomposite systems. 1,2,4,5,8,17 Thermal conductivity was reduced significantly from that of the semiconductor matrix due to phonon scattering by the nanoparticles. Based on these analyses, we believe that codepositing Tb in other III-V semiconductors, particularly InGaAs and In-GaAlAs, will lead to efficiency improvements in thermoelec- tric materials.…”

Section: Discussionmentioning

confidence: 99%

“…Semimetallic rare earth monopnictide nanoparticles epitaxially deposited within III-V semiconductors have been shown to cause radical changes in the electrical and thermal transport properties of the resulting composite materials. 1 Indeed, ErAs and ErSb nanoparticles have modified GaAs, GaSb, InGa͑Al͒Sb, and InGa͑Al͒As semiconductors, donating carriers, 2 pinning Fermi levels, 2 reducing carrier lifetimes, 3 scattering phonons, 4,5 and enhancing electron tunneling efficiency, depending on the matrix. 6 Thermoelectric ͑TE͒ materials are one of many applications of this type of composite system.…”

Section: Introductionmentioning

confidence: 99%

“…6 Thermoelectric ͑TE͒ materials are one of many applications of this type of composite system. Based on the effects of nanoparticle formation in these Er-containing systems and their success as TE materials, 1,5 related terbium arsenide/III-V nanocomposite systems are likely to behave similarly. Here, TbAs was codeposited with GaAs by molecular beam epitaxy ͑MBE͒ with the goal of characterizing these materials to understand the potential of TbAs nanoparticles for improving TE conversion efficiency in other III-V semiconductors.…”

Section: Introductionmentioning

confidence: 99%

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Growth and characterization of TbAs:GaAs nanocomposites

Cassels

Buehl

Burke

et al. 2011

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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Recently, there has been interest in semimetallic rare earth monopnictide nanoparticles epitaxially embedded in III-V semiconductors due to the drastic changes brought about in these materials' electrical and thermal properties. The properties of terbium codeposited with gallium arsenide by molecular beam epitaxy are discussed here. These new materials were characterized by x-ray diffraction, Rutherford backscattering spectrometry, resistivity measurements, photoluminescence, time-domain thermoreflectance thermal conductivity measurements, optical absorption spectroscopy, and plan-view high-angle annular dark-field scanning transmission electron microscopy. Results revealed successful formation of randomly distributed nanoparticles with an average diameter of ϳ1.5 nm, reduction of thermal conductivity by a factor of about 5, and consistency with theoretical predictions of mid-band-gap Fermi level pinning and behavior of past similar materials. The success of these TbAs:GaAs materials will lead the way for growth of similar materials ͓TbAs:InGa͑Al͒As͔ which are expected to exhibit highly desirable thermoelectric properties.

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Section: Discussionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Growth and characterization of TbAs:GaAs nanocomposites

Cassels

Buehl

Burke

et al. 2011

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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“…Metal nanoparticles embedded in semiconductors can produce a number of interesting effects and properties that are functions of the materials involved [8]. While ErAs particles in GaAs produced a resistive material [9], ErAs particles in InGaAs were found to act as a dopant contributing electrons to the semiconductor [10].…”

Section: Theoretical Considerationsmentioning

confidence: 99%

A New Scheme for the Detection of Optical Radiation in the External Photoemissive Mode: Device Implementation

Bates¹,

Clayton²

2011

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Standard Form 298 (Rev. 8-98) Prescribed by ANSI-Std Z39-18 REPORT DOCUMENTATION PAGE Form Approved OMB No. 0704-0188Public reporting burden for this collection of information is estimated to average 1 hour per response, including the time for reviewing instructions, searching data sources, gathering and maintaining the data needed, and completing and reviewing the collection of information. Send comments regarding this burden estimate or any other aspect of this collection of information, including suggestions for reducing this burden to

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“…Nanocomposites possess unique hybrid properties of incorporated components, such as unique catalytic [5,6] , electronic [7] , optical [8,9] and electrochemical [10] characteristics. TiO 2 nanoparticle has become an intensive research oxide material due to its important application in nanocomposites [11][12][13][14][15][16] .…”

Section: Introductionmentioning

confidence: 99%

Nano Au/TiO2 hollow microsphere membranes for the improved sensitivity of detecting specific DNA sequences related to transgenes in transgenic plants

Zhang

Yang

Zhou

et al. 2008

Sci. China Ser. B-Chem.

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Gold nanoparticles (nano Au)/titanium dioxide (TiO 2 ) hollow microsphere membranes were prepared on the carbon paste electrode (CPE) for enhancing the sensitivity of DNA hybridization detection. The immobilization of nano Au and TiO 2 microsphere was investigated with cyclic voltammetry (CV) and electrochemical impedance spectroscopy (EIS). The hybridization events were monitored with EIS using [Fe(CN) 6 ] 3−/4− as indicator. The sequence-specific DNA of the 35S promoter from cauliflower mosaic virus (CaMV35S) gene was detected with this DNA electrochemical sensor. The dynamic detection range was from 1.0×10 −12 to 1.0×10 −8 mol/L DNA and a detection limit of 2.3×10 −13 mol/L could be obtained. The polymerase chain reaction (PCR) amplification of the terminator of nopaline synthase (NOS) gene from the real sample of a kind of transgenic soybean was also satisfactorily detected.

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Controlling electronic properties of epitaxial nanocomposites of dissimilar materials

Cited by 26 publications

References 63 publications

Growth and characterization of TbAs:GaAs nanocomposites

Growth and characterization of TbAs:GaAs nanocomposites

A New Scheme for the Detection of Optical Radiation in the External Photoemissive Mode: Device Implementation

Nano Au/TiO2 hollow microsphere membranes for the improved sensitivity of detecting specific DNA sequences related to transgenes in transgenic plants

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