Thyristors

Baliga, B. Jayant

doi:10.1007/978-0-387-47314-7_9

Cited by 3 publications

(2 citation statements)

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“…Higher PFOM values indicate a more efficient and potentially compact device. The maximum PFOM of a 1-D junction depends on semiconductor material properties: PFOM max = V Br 2 / R normalon , normalsp ≤ 1 4 μ ϵ E c 3 In Figure a, we compare the PFOM max and substrate costs for different generations of power semiconductors. β-Ga 2 O 3 has a high E c of 8 MV/cm due to an ultrawide bandgap (UBG) ( E g ∼ 4.9 eV). , β-Ga 2 O 3 Schottky (10.6 GW/cm 2 ) and P–N junction diode (13.2 GW/cm 2 ) PFOMs have already exceeded the theoretical limits of GaN and SiC.…”

Section: Introductionmentioning

confidence: 99%

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Low Interface Resistance in Epitaxial β-Ga₂O₃ Vertical Power Diodes on Silicon (100) Using TiN Buffer

Mehta,

Pattipati,

Singh

et al. 2024

ACS Appl. Electron. Mater.

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Integrating Ga 2 O 3 power electronics on a silicon substrate can reduce the system cost and improve heat dissipation, but high on-resistance in vertical power devices is its major drawback. We solve this challenge with an electrically conductive epitaxial TiN (100) buffer layer that can be deposited on Si (100) without SiO x formation. While our thin MgO interlayer strategy prevents GaTiO x at the TiN-Ga 2 O 3 , it also results in a large vertical resistance. By tailoring the Ga 2 O 3 :Si "seed layer" deposition process, we achieve a state-of-the-art on-resistance of 3.3 mΩ cm 2 in epitaxial Ga 2 O 3 (100) diodes on Si (100), setting an upper bound for Ga 2 O 3 /TiN interface resistance. Temperature-dependent leakage analysis suggests its primary source is Poole-Frenkel emission of electrons from defect levels 0.57 eV below the conduction band.

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Section: Introductionmentioning

confidence: 99%

“…(b) PFOM cost for single crystal and integrated semiconductors. (c) Effective thermal conductivity of β-Ga 2 O 3 on silicon substrate. − …”

Section: Introductionmentioning

confidence: 99%

Low Interface Resistance in Epitaxial β-Ga₂O₃ Vertical Power Diodes on Silicon (100) Using TiN Buffer

Mehta,

Pattipati,

Singh

et al. 2024

ACS Appl. Electron. Mater.

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On the Commutation of Thyristors for High- Voltage Direct Current Transmission (HVDC)

Vobecky

2024

IEEE Trans. Electron Devices

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Investigation of analytical model of turn-off loss for 4H-SiC high-voltage trench insulated gate bipolar transistors

Liu

Wang

Fang

2018

Jpn. J. Appl. Phys.

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In this paper, an analytical model of 4H-SiC high-voltage trench insulated gate bipolar transistors (IGBTs) turn-off loss is developed for a given operating condition and validated with a two-dimensional numerical simulation without experimental conditions. Moreover, the hole-carrier concentration profile is also modeled. The simulation results demonstrated that the analytical model is correct within an acceptable range. It has been verified that the analytical model matches well with simulation results with increasing carrier lifetime in the N-drift region.

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Thyristors

Cited by 3 publications

References 38 publications

Low Interface Resistance in Epitaxial β-Ga₂O₃ Vertical Power Diodes on Silicon (100) Using TiN Buffer

Low Interface Resistance in Epitaxial β-Ga₂O₃ Vertical Power Diodes on Silicon (100) Using TiN Buffer

On the Commutation of Thyristors for High- Voltage Direct Current Transmission (HVDC)

Investigation of analytical model of turn-off loss for 4H-SiC high-voltage trench insulated gate bipolar transistors

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Thyristors

Cited by 3 publications

References 38 publications

Low Interface Resistance in Epitaxial β-Ga2O3 Vertical Power Diodes on Silicon (100) Using TiN Buffer

Low Interface Resistance in Epitaxial β-Ga2O3 Vertical Power Diodes on Silicon (100) Using TiN Buffer

On the Commutation of Thyristors for High- Voltage Direct Current Transmission (HVDC)

Investigation of analytical model of turn-off loss for 4H-SiC high-voltage trench insulated gate bipolar transistors

Contact Info

Product

Resources

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Low Interface Resistance in Epitaxial β-Ga₂O₃ Vertical Power Diodes on Silicon (100) Using TiN Buffer

Low Interface Resistance in Epitaxial β-Ga₂O₃ Vertical Power Diodes on Silicon (100) Using TiN Buffer