Low Interface Resistance in Epitaxial β-Ga2O3 Vertical Power Diodes on Silicon (100) Using TiN Buffer
Mahek Mehta,
Yeswanth Pattipati,
Arvind Rajnarayan Singh
et al.
Abstract:Integrating Ga 2 O 3 power electronics on a silicon substrate can reduce the system cost and improve heat dissipation, but high on-resistance in vertical power devices is its major drawback. We solve this challenge with an electrically conductive epitaxial TiN (100) buffer layer that can be deposited on Si (100) without SiO x formation. While our thin MgO interlayer strategy prevents GaTiO x at the TiN-Ga 2 O 3 , it also results in a large vertical resistance. By tailoring the Ga 2 O 3 :Si "seed layer" deposit… Show more
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