Thulium-doped tellurium oxide waveguide amplifier with 76  dB net gain on a silicon nitride chip

Kiani, Khadijeh Miarabbas; Frankis, Henry C.; Mbonde, Hamidu M.; Mateman, Richard; Leinse, Arne; Knights, Andrew P.; Bradley, Jonathan D. B.

doi:10.1364/ol.44.005788

Cited by 32 publications

(13 citation statements)

References 32 publications

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“…Amorphous host materials can typically be deposited at the wafer level leading to simpler fabrication and integration schemes. Several host materials have been demonstrated, including Ta 2 O 5 doped with both Er 3 and Yb 3 [30], TeO 2 doped with Er 3 [31] and Tm 3 [32], and Al 2 O 3 doped with Nd 3 , Yb 3 , Er 3 , Tm 3 , and Ho 3 [19,25,[33][34][35] to achieve emission at different wavelengths. Those materials are mainly deposited by reactive co-sputtering, although recent studies on rare-earth-ion-doped Al 2 O 3 deposited by atomic layer deposition have shown very high gain per unit length (i.e., 20.1 7.31 dB∕cm net modal gain in Al 2 O 3 :Er 3 ) [23] thanks to the control of Al 2 O 3 and Er 2 O 3 at the sub-atomic level.…”

Section: Introductionmentioning

confidence: 99%

High-gain waveguide amplifiers in Si₃N₄ technology via double-layer monolithic integration

Dijkstra

Korterik

et al. 2020

Photon. Res.

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Silicon nitride Si 3 N 4-on-SiO 2 attracts increasing interest in integrated photonics owing to its low propagation loss and wide transparency window, extending from ∼400 nm to 2350 nm. Scalable integration of active devices such as amplifiers and lasers on the Si 3 N 4 platform will enable applications requiring optical gain and a muchneeded alternative to hybrid integration, which suffers from high cost and lack of high-volume manufacturability. We demonstrate a high-gain optical amplifier in Al 2 O 3 :Er 3 monolithically integrated on the Si 3 N 4 platform using a double photonic layer approach. The device exhibits a net Si 3 N 4-to-Si 3 N 4 gain of 18.1 0.9 dB at 1532 nm, and a broadband gain operation over 70 nm covering wavelengths in the S-, C-and L-bands. This work shows that rare-earth-ion-doped materials and in particular, rare-earth-ion-doped Al 2 O 3 , can provide very high net amplification for the Si 3 N 4 platform, paving the way to the development of different active devices monolithically integrated in this passive platform.

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Section: Introductionmentioning

confidence: 99%

High-gain waveguide amplifiers in Si₃N₄ technology via double-layer monolithic integration

Dijkstra

Korterik

et al. 2020

Photon. Res.

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“…Such a device not only is useful as a stand-alone highly nonlinear system but can also enhance the nonlinearity of the existing Si 3 N 4 waveguides postfabrication. Together with the emerging integrated lasers and amplifiers on TeO 2 and other rare-earth media [47][48][49]24,25], this work paves the way for a monolithic TeO 2 -based nonlinear silicon photonics platform.…”

Section: Introductionmentioning

confidence: 93%

Nonlinear silicon photonics on CMOS-compatible tellurium oxide

et al. 2020

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Silicon photonics is coming of age; however, it is still lacking a monolithic platform for optical sources and nonlinear functionalities prompting heterogeneous integration of different materials tailored to different applications. Here we demonstrate tellurium oxide as a complementary metal oxide semiconductor silicon photonics platform for nonlinear functionalities, which is already becoming an established platform for sources and amplifiers. We show broadband supercontinuum generation covering the entire telecom window and show for the first time to our knowledge third-harmonic generation in its integrated embodiment. Together with the nowavailable lasers and amplifiers on integrated TeO 2 this work paves the way for a monolithic TeO 2-based nonlinear silicon photonics platform.

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“…Tellurite glass's large refractive index (2.08 at 1550 nm) and demonstrated low optical propagation losses 35,36 make it a suitable candidate for fabricating high Q resonators compatible with a silicon photonics platform. Additionally, tellurite glass has a large nonlinear coefficient, 37,38 large Raman gain, 39 and has been used as a host for erbium- [40][41][42] and thulium 43 -doped waveguide amplifiers and lasers. We have previously shown applications of this platform toward thermal and evanescent waveguide sensor devices.…”

Section: Introductionmentioning

confidence: 99%

Tellurite glass microcavity resonators integrated on a silicon photonics platform

Frankis

Bonneville

Bradley

2021

J. Optical Microsystems

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We report on the design and measurement of tellurium oxide microcavity resonators coupled to silicon bus waveguides on silicon photonic chips. The resonators are fabricated using a standard silicon photonics foundry processing flow in which the SiO 2 top-cladding is etched in a ring shape and aligned next to a silicon bus waveguide. The resulting microtrench is coated in a tellurium oxide film by reactive sputtering in a post-processing step to form the waveguiding layer of the resonator. A 100-μm radius trench with a 1115-nm-thick TeO 2 film is measured to have an internal Q factor of 0.9 × 10 5 . Smoothing the etch wall surface with a fluoropolymer coating is shown to enhance the Q factor of several devices, with a trench coated in a 630-nm-thick TeO 2 film demonstrating a Q factor of 2.1 × 10 5 corresponding to 1.7-dB/cm waveguide loss. These results demonstrate a potential pathway toward monolithic integration of tellurite glass-based nonlinear and rare-earth-doped devices compatible with silicon photonics platforms. © The Authors. Published by SPIE under a Creative Commons Attribution 4.0 Unported License. Distribution or reproduction of this work in whole or in part requires full attribution of the original publication, including its DOI.

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Thulium-doped tellurium oxide waveguide amplifier with 76 dB net gain on a silicon nitride chip

Cited by 32 publications

References 32 publications

High-gain waveguide amplifiers in Si₃N₄ technology via double-layer monolithic integration

High-gain waveguide amplifiers in Si₃N₄ technology via double-layer monolithic integration

Nonlinear silicon photonics on CMOS-compatible tellurium oxide

Tellurite glass microcavity resonators integrated on a silicon photonics platform

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Thulium-doped tellurium oxide waveguide amplifier with 76 dB net gain on a silicon nitride chip

Cited by 32 publications

References 32 publications

High-gain waveguide amplifiers in Si3N4 technology via double-layer monolithic integration

High-gain waveguide amplifiers in Si3N4 technology via double-layer monolithic integration

Nonlinear silicon photonics on CMOS-compatible tellurium oxide

Tellurite glass microcavity resonators integrated on a silicon photonics platform

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Product

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High-gain waveguide amplifiers in Si₃N₄ technology via double-layer monolithic integration

High-gain waveguide amplifiers in Si₃N₄ technology via double-layer monolithic integration