Threshold voltage stability of organic field-effect transistors for various chemical species in the insulator surface

Abstract

Influence of fine roughness of insulator surface on threshold voltage stability of organic field-effect transistors Appl. Phys. Lett. 93, 033308 (2008); 10.1063/1.2957987 Effects of the permanent dipoles of self-assembled monolayer-treated insulator surfaces on the field-effect mobility of a pentacene thin-film transistor Appl. Phys. Lett. 90, 132104 (2007); 10.1063/1.2457776 Threshold voltage shift in organic field effect transistors by dipole monolayers on the gate insulator J. Appl. Phys. 96, 6431 (2004); 10.1063/1.1810205High capacitance organic field-effect transistors with modified gate insulator surface

Reliability of Organic Field‐Effect Transistors

“…In most studies, stress effects with SiO 2 gate dielectric are reduced when the substrate surface is rendered more hydrophobic through the use of SAMs. However, Suemori et al [36] found for bottom-gate, top-contact pentacene FET with a SiO 2 gate dielectric that SAM modification with long alkyl chains, such as octadecyl-or octyl-trichlorosilane, exhibits significantly more pronounced threshold-voltage shift under negative gatebias stress than SAMs with short alkyl chains. This was attributed to a lowering of the activation energy for trap creation.…”

Air‐Operable, High‐Mobility Organic Transistors with Semifluorinated Side Chains and Unsubstituted Naphthalenetetracarboxylic Diimide Cores: High Mobility and Environmental and Bias Stress Stability from the Perfluorooctylpropyl Side Chain

“…Suemori et al reported a similar result for the pentacene transistor, where a longchain chemical species on the insulator surface increased the V T shift from ON gate bias stress. [ 63 ] They attributed this to the lowering of the activation energy for trap creation but the physical origin was not clear. It seems that V T shift is related to the roughness rather than the grain size.…”

Low‐Temperature Processable Organic‐Inorganic Hybrid Gate Dielectrics for Solution‐Based Organic Field‐Effect Transistors

“…, hysteresis in drain current-gate voltage ( I D -V G ) curves [9][10][11][12][13] and V Ginduced threshold voltage ( V T ) shifts. [14][15][16] For the fabrication of OFETs by solution process, the polymer gate dielectrics which are not dissolved by liquid deposition of soluble organic semiconductors are essential. Therefore, thermally curable polymer gate dielectrics such as poly(vinyl phenol) (PVP) [ 12 , 13 , 17 , 18 ] and polyimide [ 18 , 19 ] are expected to be promising candidates for this process.…”