Threshold Voltage Sensitivity Analysis of Surrounding Gate Mosfet for Biosensing Applications

Abstract

A simulation based novel and unique approach of controlling and modulating the threshold voltage sensitivity of a short channel surrounding gate MOSFET biosensor is investigated for improved biosensing applications. Different results show that the biosensor with symmetric doping is more sensitive to charged and neutral biomolecules when compared with the asymmetric doping. Threshold voltage sensitivity and subthreshold slope sensitivity of 4.5 and 0.44 have been obtained which shows the significance of doping attributed sensitivity. It is so find that sensitivity increases on increasing drain to source voltage because of stronger horizontal electric field across the channel. A remarkable percentage change due to the doping variation shows the improved biosensing action in terms of threshold voltage change and subthreshold slope change.