Threshold Voltage of Si Single-Electron Transistor

Fujiwara, Akira; Horiguchi, S.; Nagase, Masao; Takahashi, Yasuo

doi:10.1143/jjap.42.2429

Cited by 21 publications

(10 citation statements)

References 10 publications

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“…Large undoped silicon-on-insulator (SOI) channels with oxide thickness t ox = 400 nm are locally constricted by e-beam lithography and thermally oxidized to form a 40-nm-thick upper oxide (see Methods). The current characteristics are determined by the constricted channel whose width (W) and length (L) after the oxidation are 15 and 50 nm respectively 13 . The Si substrate is used as the back-gate.…”

Section: Resultsmentioning

confidence: 99%

One-by-one trap activation in silicon nanowire transistors

et al. 2010

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Flicker or 1/f noise in metal-oxide-semiconductor field-effect transistors (mosFETs) has been identified as the main source of noise at low frequency. It often originates from an ensemble of a huge number of charges becoming trapped and de-trapped. However, as a deviation from the well-known model of 1/f noise is observed for nanoscale mosFETs, a new model is required. Here, we report the observation of one-by-one trap activation controlled by the gate voltage in a nanowire mosFET and propose a new low-frequency-noise theory for nanoscale FETs. We show that the Coulomb repulsion between electronically charged trap sites prevents the activation of several traps simultaneously. This effect induces a noise reduction of more than one order of magnitude. It decreases when the electron density in the channel is increased due to the electrical screening of traps. These findings are technologically useful for any FET with a short and narrow channel.

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Section: Resultsmentioning

confidence: 99%

One-by-one trap activation in silicon nanowire transistors

et al. 2010

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“…Even if hidden peaks are not counted, the number of such peaks is generally one or two. 37 From the charge stability diagram in Fig. 3(a), two dots comprising the DQD system (i.e., QD1 and QD2) were understood to couple very weakly with each other.…”

Section: Resultsmentioning

confidence: 99%

Coupling capacitance between double quantum dots tunable by the number of electrons in Si quantum dots

Uchida

Arita

Fujiwara

et al. 2015

Journal of Applied Physics

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“…Word Line (Fujiwara et al, 1998(Fujiwara et al, , 2003Horiguchi et al, 2004;Nishiguchi et al, 2005) or to the side gate in a multigate SET/ SHT (Takahashi et al, 2000b;Kitade et al, 2005;Kim et al, 2001;Tucker, 1992;Ono et al, 2000), or…”

Section: Bit Linementioning

confidence: 99%