Threshold voltage drift of FET sensor arrays with different gate insulators

Perréard, C.; Blin, Antoine; Bockelmann, Ulrich

doi:10.1016/j.snb.2013.04.121

Cited by 2 publications

(3 citation statements)

References 21 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Remarkably, our GFET devices exhibit very small thresholdvoltage drifts (below 1 mV per hour, see Figures 2b, 5, and 6), much smaller than the ones observed with silicon devices (about 0.2-1 mV min −1 , see for instance, refs. [4,33,34] ). In addition, the amplitudes of the electronic signals of DNA hybridization are about 100 mV for our GFET arrays, strongly exceeding the typical 3-10 mV amplitudes of silicon FET arrays (see refs.…”

Section: Discussionmentioning

confidence: 99%

DNA Hybridization Measured with Graphene Transistor Arrays

Mensah

Cissé

Pierret

et al. 2020

Adv Healthcare Materials

View full text Add to dashboard Cite

Arrays of field-effect transistors are fabricated from chemical vapor deposition grown graphene (GFETs) and label-free detection of DNA hybridization performed down to femtomolar concentrations. A process is developed for large-area graphene sheets, which includes a thin Al 2 O 3 layer, protecting the graphene from contamination during photolithographic patterning and a SiO x capping for biocompatibility. It enables fabrication of high-quality transistor arrays, exhibiting stable close-to-zero Dirac point voltages under ambient conditions. Passivation of the as-fabricated chip with a layer composed of two different oxides avoids direct electrochemical contact between the DNA solutions and the graphene layer during hybridization detection. DNA probe molecules are electrostatically immobilized via poly-l-lysine coating of the chip surface. Adsorption of this positively charged polymer induces a positive shift of the Dirac point and subsequent immobilization of negatively charged DNA probes induces a negative shift. Spatially resolved hybridization of DNA sequences is performed on the GFET arrays. End-point as well as real-time in situ measurements of hybridization are achieved. A detection limit of 10 fm is observed for hybridization of 20-nucleotide DNA targets. Typical voltage signals are around 100 mV and spurious drifts below 1 mV per hour.

show abstract

Section: Discussionmentioning

confidence: 99%

DNA Hybridization Measured with Graphene Transistor Arrays

Mensah

Cissé

Pierret

et al. 2020

Adv Healthcare Materials

View full text Add to dashboard Cite

show abstract

“…These effects can induce variation of the electrostatic potential at the solid/electrolyte interface by acting on the gate insulator and/or the molecular coating. (iv) Temporal drift of the FET threshold voltage sometimes amounts to the order of mV/min, which for a hybridization duration of 10 min or more can lead to voltage shifts that are comparable to the hybridization signal 20 .…”

Section: Discussionmentioning

confidence: 99%

“…The positive background charge of the PLL coating attracts target DNA and thus allows hybridization duration well below one hour 22 . This point is of particular importance for field effect detection of hybridization, where temporal drift of the FET threshold voltage can make detection of reactions that last several hours challenging 20 .…”

Section: Methodsmentioning

confidence: 99%

Electronic hybridization detection in microarray format and DNA genotyping

Blin

Cissé

Bockelmann

2014

Sci Rep

View full text Add to dashboard Cite

We describe an approach to substituting a fluorescence microarray with a surface made of an arrangement of electrolyte-gated field effect transistors. This was achieved using a dedicated blocking of non-specific interactions and comparing threshold voltage shifts of transistors exhibiting probe molecules of different base sequence. We apply the approach to detection of the 35delG mutation, which is related to non-syndromic deafness and is one of the most frequent mutations in humans. The process involves barcode sequences that are generated by Tas-PCR, a newly developed replication reaction using polymerase blocking. The barcodes are recognized by hybridization to surface attached probes and are directly detected by the semiconductor device.

show abstract

Threshold voltage drift of FET sensor arrays with different gate insulators

Cited by 2 publications

References 21 publications

DNA Hybridization Measured with Graphene Transistor Arrays

DNA Hybridization Measured with Graphene Transistor Arrays

Electronic hybridization detection in microarray format and DNA genotyping

Contact Info

Product

Resources

About