Threshold drop of the differential resistance of stripe quantum-well InGaAs/GaAIAs lasers

Eliseev, P G; Maege, J.; Erbert, G.; Beister, G.

doi:10.1070/qe1995v025n02abeh000297

Cited by 5 publications

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“…Later this phenomenon had been observed in other types of laser diodes, particularly, in QW-based lasers [7]. The regular behavior is voltage saturation in spite the further increase of the current above the threshold.…”

Section: Current [A]mentioning

confidence: 95%

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Modeling of injection-induced conductivity effects in light-emitting and laser diodes

Eliseev

2005

SPIE Proceedings

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The nonlinear contribution into the diode resistance in addition to the nonlinearity ofinjectingp-n junction is considered associated with a carrier injection into some nominally passive regions adjacent to the active region ofthe device (effect of the injection-induced conductivity, IIC). A condition the IIC to give a substantial contribution is availability of resistive passive layer or depleted layer in the diode chip that can be undergone to a conductivity modification by carrier injection and leakage. There are some consequences that look like unusual features: (i) anomalously large the nonideality factor ofl-V curve; (ii) anomalous electrical response on the variation of the optical feedback in the laser diode device; (iii) anomalous sign ofthe threshold-related kink ofthe differential resistance oflaser diode.

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Section: Current [A]mentioning

confidence: 95%

“…The junction voltage is determined by iSF, namely, V is equal or slightly larger than F/e. In principle, this phenomenon provides identification the oscillation threshold current with only electrical measurements [1][2][3][4][5][6][7] so far these measurements are closely related to the Fermi voltage.…”

Section: Introductionmentioning

confidence: 99%

Modeling of injection-induced conductivity effects in light-emitting and laser diodes

Eliseev

2005

SPIE Proceedings

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Simultaneous sudden changes of electrical behavior at the threshold in laser diodes

Feng

Zhu

et al. 2007

Journal of Applied Physics

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Precise ac electrical measurements as well as dc I-V plots at forward bias have been used to characterize multi-quantum-well (MQW) laser diodes. Step offsets of apparent conductance, apparent capacitance, junction voltage, series resistance, and ideality factor at lasing threshold were observed. To compare the electrical characteristics of different diodes numerical simulations of the IdV∕dI-I curve of the double-heterostructure (DH) laser were performed. We find that the conventional model used to explain this curve is not very satisfactory. Our simulations demonstrate that the junction voltage, series resistance, and ideality factor for both DH and MQW lasers exhibit the same sudden changes at threshold. Perhaps the electrical behavior near threshold for all laser diodes is very similar.

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Stimulated emission related anomalous change of electrical parameters at threshold in GaN-based laser diodes

Roth¹

2013

Applied Physics Letters

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We report the stimulated emission related anomalous behavior of electrical parameters in GaN-based laser diodes based on both experiments and self-consistent calculations. In particular, the separation of quasi-Fermi levels of electrons and holes across active region shows a drop (or “pinning”) in threshold region, followed by an increase with current. The start and end points correspond to the two kink points of the first derivative of the optical output power-current (P-I) curve. This abnormal change of electrical parameters always satisfies the need of sufficient carriers for stimulated emission in the process of transition to lasing as well as lasing enhancement.

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Threshold drop of the differential resistance of stripe quantum-well InGaAs/GaAIAs lasers

Cited by 5 publications

References 0 publications

Modeling of injection-induced conductivity effects in light-emitting and laser diodes

Modeling of injection-induced conductivity effects in light-emitting and laser diodes

Simultaneous sudden changes of electrical behavior at the threshold in laser diodes

Stimulated emission related anomalous change of electrical parameters at threshold in GaN-based laser diodes

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