Simultaneous sudden changes of electrical behavior at the threshold in laser diodes

Abstract

Precise ac electrical measurements as well as dc I-V plots at forward bias have been used to characterize multi-quantum-well (MQW) laser diodes. Step offsets of apparent conductance, apparent capacitance, junction voltage, series resistance, and ideality factor at lasing threshold were observed. To compare the electrical characteristics of different diodes numerical simulations of the IdV∕dI-I curve of the double-heterostructure (DH) laser were performed. We find that the conventional model used to explain this curve is not very satisfactory. Our simulations demonstrate that the junction voltage, series resistance, and ideality factor for both DH and MQW lasers exhibit the same sudden changes at threshold. Perhaps the electrical behavior near threshold for all laser diodes is very similar.

Temperature dependent negative capacitance behavior of Al/rhodamine-101/n-GaAs Schottky barrier diodes and Rs effects on the C–V and G/ω–V characteristics

“…According to Wu et al [25] such behavior of C in the forward bias region can be explained by the loss of interface charges localized at metal/semiconductor interface due to impact ionization process. Similar results of the NC behavior have been reported in the literature [27][28][29][30][31][32]. Several suggestions have been proposed for the exact origin of NC [24][25][26][27][28][29][30][31]35].…”

“…Similar results of the NC behavior have been reported in the literature [27][28][29][30][31][32]. Several suggestions have been proposed for the exact origin of NC [24][25][26][27][28][29][30][31]35]. Among them Jones et al [24] stated that relaxation-like material is responsible for NC because of the injection of holes which recombine easily with the free electron charge of the dipole at M/S interface, also another origin of NC may be high resistivity materials, and it has been clearly shown by them [24].…”

“…These devices include MS diodes [24,25], hetero-junctions [3,26], far-infrared detectors [27], laser diodes [28], light emitting diodes [29], photo-detector [30] and some organic semiconductor devices [31]. This physical mechanism of the NC in different devices is obviously different.…”

Stimulated emission in GaN-based laser diodes far below the threshold region

“…The sample under discussions was a GaN-based LD Sony SLD3132VF diode lasing at 404 nm manufactured by Sony Corp. Its electrical characterizations are accomplished using ac IV method, which were described in detail elsewhere [18][19][20]. As shown in We record the spectra at different polarization angles under different injection levels to clarify their origins.…”

“…After systematically studied the GaAs-and InP-based LDs (typical lasing wavelengths at 650, 780, 870 and 1320 nm), they pointed out the synchronous step offsets of electrical parameters occurred at the onset of lasing. In particular, the separation of the quasi-Fermi levels of electron and holes across active region ( j V ) suddenly jumps to a saturated value at the onset of lasing [18][19][20]. Lately, we reported the stimulated emission related anomalous behavior in GaN-based LD.…”