Threshold currents of 1.3-μm bulk, 1.55-μm bulk, and 1.55-μm MQW DFB P-substrate partially inverted buried heterostructure laser diodes

Kakimoto, S.; Watanabe, Hitoshi

doi:10.1109/3.661464

Cited by 11 publications

(3 citation statements)

References 69 publications

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“…The post-processes to fabricate the waveguide, electrodes and facet coatings are also the same as that of the normal DFB lasers ref. [ 23 ]. In addition, we note that the phase-shifted DFB-SOA in refs [ 24 , 25 ] apply a very similar structure of the phase-shifted DFB-LD.…”

Section: Discussionmentioning

confidence: 99%

All-optical analog comparator

Liu

et al. 2016

Sci Rep

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An analog comparator is one of the core units in all-optical analog-to-digital conversion (AO-ADC) systems, which digitizes different amplitude levels into two levels of logical ‘1’ or ‘0’ by comparing with a defined decision threshold. Although various outstanding photonic ADC approaches have been reported, almost all of them necessitate an electrical comparator to carry out this binarization. The use of an electrical comparator is in contradiction to the aim of developing all-optical devices. In this work, we propose a new concept of an all-optical analog comparator and numerically demonstrate an implementation based on a quarter-wavelength-shifted distributed feedback laser diode (QWS DFB-LD) with multiple quantum well (MQW) structures. Our results show that the all-optical comparator is very well suited for true AO-ADCs, enabling the whole digital conversion from an analog optical signal (continuous-time signal or discrete pulse signal) to a binary representation totally in the optical domain. In particular, this all-optical analog comparator possesses a low threshold power (several mW), high extinction ratio (up to 40 dB), fast operation rate (of the order of tens of Gb/s) and a step-like transfer function.

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Section: Discussionmentioning

confidence: 99%

All-optical analog comparator

Liu

et al. 2016

Sci Rep

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“…Simultaneously, the amplitude of the response is decreased for all values of modulation frequencies and pumping current. These e!ects will result in a diminishing of the high-speed properties of long-wavelength laser diodes as well as a!ecting their non-linear optical properties such as bistability and chaotic dynamics [23].…”

Section: Modulation Responsementioning

confidence: 99%

Theoretical analysis of the effect of amplified luminescence on the modulation response of laser diodes

Буров

Gribkovskii

Grigelevich

et al. 2001

Int J Numerical Modelling

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SUMMARYA theoretical framework is established for the investigation of the e!ect of ampli"ed luminescence, non-radiative recombination, photon losses, and gain non-linearity on the threshold current characteristics and small-signal modulation responses of bulk and quantum-well (QW) 1.3 and 1.55 m In V Ga \V As W P \W /InP laser diodes. It is shown that the rate of recombination induced by ampli"ed luminescence exhibits a highly non-linear dependence on both carrier concentration and temperature. Ampli"ed luminescence and Auger recombination increase the laser threshold and contribute strongly to the device threshold current temperature sensitivity. Ampli"ed luminescence and Auger recombination are shown to have a signi"cant detrimental e!ect on the modulation properties of long-wavelength laser diodes.

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“…Experimental studies of this effect have focussed on the use of modified quantum well structures -for example, structures with families of wells of different thicknesses [ 101 -in order to reveal through spectral signatures the location of carriers. Nonuniformity in the distribution of carriers among identical quantum wells has been explored in detail through theory [ l l , 121, but has proven difficult to observe through direct experiment [5].…”

Section: Introductionmentioning

confidence: 99%

External electronic and optical evidence for internal quantum transport effects in BH-MQW lasers

Ban¹,

Sargent²

2000 IEEE International Symposium on Compound Semiconductors. Proceedings of the IEEE Twenty-Seventh International Symposium On

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We report an anomalous temperature-dependence in the efficiency and threshold current of multi-quantum well buried heterostructure lasers between 60 K and 190 K. The behaviour is accompanied by sharp, discrete features in differential efficiency and differential resistance. We propose an explanation in terms of impeded interwell transport and the establishment of a strongly nonuniform distribution of carriers among the quantum wells.

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Threshold currents of 1.3-μm bulk, 1.55-μm bulk, and 1.55-μm MQW DFB P-substrate partially inverted buried heterostructure laser diodes

Cited by 11 publications

References 69 publications

All-optical analog comparator

All-optical analog comparator

Theoretical analysis of the effect of amplified luminescence on the modulation response of laser diodes

External electronic and optical evidence for internal quantum transport effects in BH-MQW lasers

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